KEYNOTE SESSIONS

KEYNOTE-1
VENUE: SAC
TIME: 10:30AM - 11:15 AM

DATE: 23/01/2016

Title: Low Power Transistors: High Mobility and 3D

Channels
Speaker: Prof. Chee-Wee Liu
Affiliation: National Taiwan University, Taiwan
Abstract: The applications of mobile devices and Internet of
Things require the low power and low energy
consumption of transistors beside the high performance.
The two device technologies, which can serve this
purpose, are the high mobility channel and the steep
sub threshold slope. Due to the both high electron and
hole mobility, the Ge channel is the best material for
CMOS channels. The 3D transistor structure can push
the sub-threshold slope to the theoretical value of 60
mV/decade. Note that the Tunneling FETs and
Negative Capacitance FETs can have subthreshold
slope lower than 60 mV/decade, but Vg range, Ion, and
speed are still concerned.
Both n and p Ge channels with gate-all-around structure
will be presented in this talk. The device is fabricated
on epi-Ge on SOI with in-situ doping to prevent
implantation induced defects and to achieve high
activation rate. To further reduce the defect density, the
PDA is performed by laser anneal or RTA process. The
gate-all-around structure is formed by selective etching
and the fin width down to 9 nm is achieved. The
junctionless operation mode is chosen due the
simplified process and high mobility with less surface
scattering than inversion mode devices. The
demonstrated Ge junctionless gate-all-around FETs
have high drive current (828 A/m for nFETs and 390
A/m for pFETs) with low leakage current and good
sub threshold characteristics.

KEYNOTE-2
VENUE: SAC
TIME: 11:15AM - 12:00 AM

DATE: 23/01/2016

Title: Reflex Klystron is an Oscillator and is an Oscillator

Speaker: Prof. Baidyanath Biswas
Affiliation: Retd. Prof. University of Burdwan
Abstract: As a prelude to the subject of study, we remember how
Lee de Forests vacuum triode left the arena of high
frequency devices making room for the entry of
Berkhausen-Kurtz positive grid oscillator. To my mind
this paved the way for the concept of velocity
modulation and electron bunching that ultimately led to
the publication of the classic paper on velocity
modulation (1935). It sowed the seed for the
development of Reflex Klystron. The 1939 was the
epicenter of the golden period when a number of basic
works on the principle of velocity modulation was
published. Incidentally, Reflex Klystron, also known as
Satton-Tube, was developed in 1940 by Robert Satton
and was used in World War II. Unfortunately,
Wikipedia designated Reflex Klystron as an obsolete
device. But to call a model as an obsolete one with
many a question still to be answered is painful. This is
exactly the purpose for which this paper is written.
You never change things by fighting the existing
reality. To change something; build a new model that
makes the existing model obsolete (R. B. Fuller).
Reflex Klystron is an Oscillator. It must start growing
spontaneously and must stop growing after attaining a
certain level. What is then the final steady state value?
From where and how does it start growing? Of course
from white noise, then how does it achieve spectral
purification while growing? Where are the location of
the poles in the s-plane to begin with and where do they
move in the steady state? Do we need a modified
Applegate Diagram to explain these in simple physical
terms? Do both the amplitude and frequency change
during the growth? On what does the maximum power
output depend? Has it anything to do with the mode
number? How does the transit time (and hence mode
number) affect its behaviour, like, stability, power
output, growth- time, etc? Can it lead to Chaos? These
are some of the questions that the lecture tries to answer
in a tutorial fashion.

KEYNOTE-3
VENUE: DM Sen Auditorium
TIME: 02:15PM - 03:00PM

DATE: 23/01/2016

Title: Need for Robust, Intelligent and Fast Optimization Tool

Speaker: Prof: Prof. Dilip Kumar Pratihar
Affiliation: IIT Kharagpur
Abstract: Optimization is the process of finding the best one out
of all feasible solutions. Starting from initial
solution(s), an optimization tool tries to determine
optimal solution(s) through a number of iterations.
Thus, search direction and step length are to be decided
at each of the iterations of optimization tool. The
performances of traditional tools for optimization are
found to be objective function-dependent. In order to
obtain more robust optimization tool suitable for
handling a variety of optimization problems, natureinspired optimization tools have been proposed. There
exist, at present, a number of nature-inspired
optimization tools but their performances are found to
be function-dependent. Thus, robustness, the very
purpose of developing the nature-inspired (also called
non-traditional) tool is lost. Moreover, the optimization
tool should be fast and intelligent enough to search the
space of objective function. The need for a robust,
intelligent and faster optimization tool will be felt and
justified in the proposed talk, during which examples
related to genetic algorithm (GA) and particle swarm
optimization (PSO) will be cited.

KEYNOTE-4
VENUE: DM Sen Auditorium
TIME: 10:30AM - 11:15 AM

DATE: 24/01/2016

Title: MEMS for RF Applications

Speaker: Prof. Amitava Dasgupta
Affiliation: IIT Madras
Abstract: The talk will start with a brief introduction to Micro
Electro Mechanical Systems (MEMS) and the different
applications of MEMS technology. The possible
applications of Radio Frequency (RF) MEMS,
particularly in devices such as mobile phones, will then

be discussed. This will be followed by detailed

discussions on two particular components, viz. the RF
MEMS switch and the RF MEMS resonator. The
relevant sensing and actuation mechanisms, e.g.
electrostatic actuation, piezoresistive sensing and
piezoelectric sensing and actuation will also be
discussed. The discussions on RF switches and
resonators will start with the required specifications, the
principles of operation, the design procedure and
fabrication process. An interesting possibility is the onchip integration of RF MEMS resonator with CMOS.
The characterization results of these devices fabricated
at Microelectronics & MEMS Laboratory, IIT Madras
will also be presented. The scope for research in these
areas will be emphasized.

KEYNOTE-5
VENUE: DM Sen Auditorium
TIME: 11:15AM - 12:00 AM

DATE: 24/01/2016

Title: Transformation of Technology: Communication to

Microelectronics
Speaker: Prof. Debatosh Guha
Affiliation: IIT Kharagpur
Abstract: Evolution of technology takes place through some
specific transformations. The same is true for: electrical
communication to the era of electronics, micro and
nano-electronics being the most active area to transform
the world to nano-state. But what was the key to lead
the transformation? I was in search of this quest for a
long time, which I could resolve recently by analyzing
the dynamics of technological reforms over a century.
Some special investigations into Hertzs radiation
experiment (1887), J C. Boses microwave device
(1899), and Marconis wireless experiment (1901),
especially after my recent visits to Hertzs Laboratory
in Karlsruhe and Deutsches Museum in Munich have
lead to some clearer understanding. I will try to show
the gaps between the available instruments and the
future need as was ushered by Marconis experiment
in 1901. This helped me to answer to my quest: Which
was the key factor in transforming technology from
Communication to Electronics?

KEYNOTE-6
VENUE: DM Sen Auditorium
TIME: 02:15PM - 03:00 AM
Title:

Resistive Switching Memory

Applications
Speaker: Prof Siddheswar Maikap
Affiliation: CGU, Taiwan

DATE: 24/01/2016
for

Biomedical

Abstract: Recently, resistive random access memory (RRAM)

has become a promising candidate to replace three
dimensional FLASH for crossbar applications at a low
cost, due to its simple structure, low power
consumption (~fJ), long endurance ((>1012 cycles) and
high speed operation (~ns). The RRAM has great
potential to replace 3D flash in near future owing to its
scalability (<10 nm), low energy consumption, high
speed (ns), long endurance), and high-density crosspoint arrays with low cost. These resistive switching
memories have two categories; i) oxygen vacancy and
ii) metallic filament based devices. Different switching
materials have been reported, however, low current
operated devices (<100 A) are challenging for
productive RRAM applications. Different switching
materials, e.g., Ta2O5, HfO2, TiO2, Gd2O3, and Al2O3,
have been reported. The Al2O3 based resistive
switching memory devices including interfacial layer
have been developed in cross-point architecture.
Bilayers have been also used to improve switching
performance. This cross-point memory is operated
under a small current of 20 A, high-speed of 100 ns,
and low voltage operation of 3V. Physical and
electrical scaling issues will be also discussed. On the
other hand, breast cancer detection has been studied
using
electrolyte-Insulator-Semiconductor
(EIS)
structure. Therefore, the memory device can be used as
a Bio-Medical sensor for healthcare, which is named as
Bio-Medical Resistive Random Access Memory (BMRRAM). The cross-point device shows current-voltage
characteristics of different urea concentrations ranging
from 1 mM to 10 mM. Similarly, multi analytes of
blood serum can be sensed by using cross-point arrays
at the same time in memory chip. One BM-RRAM
device can be used many times after RESET, which
will be useful in near future for healthcare unit at home.

KEYNOTE-7
VENUE: SAC
TIME: 09:45AM - 10:30 AM

DATE: 25/01/2016

Title: Machine Intelligence and Granular Mining with

Various Applications
Speaker: Padmashri Prof Sankar Kumar Pal
Affiliation: Former Director, ISI Kolkata
Abstract: Pattern recognition and data mining in the framework
of machine intelligence are explained. The role of
rough sets in uncertainty handling and granular
computing is highlighted. Relevance of its integration
with fuzzy sets to result in a stronger paradigm for
uncertainty handling is explained. Generalized rough
sets, rough-fuzzy entropy, different f-information
measures, and fuzzy granular social network (FGSN)
model are described. FGSN handles the uncertainty
arising from vaguely defined closeness or relations of
the actors (nodes). Various measures towards this are
stated. Rough-fuzzy image entropy takes care of the
fuzziness in boundary regions as well as the rough
resemblance among nearby pixels and gray levels.
Rough-fuzzy case generation with variable reduced
dimension is useful for mining data sets with large
dimension and size. Fuzzy granular model of social
networks provides a generic platform for its analysis.
Fuzzy-rough communities, detected thereby, are more
significant when the degree of overlapping between
communities increases. f-information measures quantify
well the mutual information in efficient feature
selection, and the conditional information in measuring
the goodness of community structures in network
mining. These characteristics are demonstrated for tasks
like video tracking, social network analysis and gene/
microRNA selection. The role of different kinds of
granules is illustrated as well as the concepts of fuzzy
granular computing and granular fuzzy computing. The
talk concludes mentioning their relevance in handling
Big data, the challenging issues and the future
directions of research.

KEYNOTE-8
VENUE: SAC
TIME: 10:30AM - 11:15 AM

DATE: 25/01/2016

Title: Substrate Integrated Waveguide and its Applications

Speaker: Prof Animesh Biswas
Affiliation: IIT Kanpur
Abstract: With rapid development of microwave & millimeter
wave technologies, researches on designing high
frequency circuits with low loss, ease of fabrication
process, high power handling capability, good
electromagnetic shielding etc. are of prime interest
now-a-days. Both microstrip based planar technology
and waveguide based non-planar technology are
extensively used to meet these requirements but all of
them are limited in performance. Recently a new
technology has emerged known as "Substrate Integrated
Waveguide (SIW)" which exhibits significant potential
to realize high frequency circuits with satisfactory
performance. This new technology implements
conducting sidewall in the planar substrate by using
rows of metallic vias or plated through hole (PTH) and
thus a completely shielded waveguide based
transmission line is realized in planar substrate with its
inherent advantages such as high Q, low loss, higher
power handling capability etc.
The design of SIW based circuits can be directly
implemented from conventional waveguide theory with
certain modification in the dimensions of the prototype.
Hence many microwave and millimeter wave circuits
such as filter, power divider, antenna, oscillator, mixer
have been realized using this technology in planar
substrate and thus opens new possibilities in the area of
microwave and millimeter wave communication. The
current tutorial is focused on introduction to SIW based
circuits, different SIW transition to other planar
microwave circuits and also several SIW based designs
e.g. antenna, filter, power divider etc.