NAME: Somnath (ID No: 2023H1240062H)

Short Paper

Title: Short-Channel and Narrow-Channel MOSFETs

Abstract:

The study explores the complexities of short and narrow MOSFETs, small components in
electronics. It investigates challenges these tiny transistors face, providing solutions for better
performance. The research highlights smart strategies and models to overcome issues, ensuring
our gadgets work efficiently despite their small size.

1. Theory and Background:

Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have been integral to the

evolution of semiconductor technology. Short-Channel MOSFETs, with reduced channel
lengths, and Narrow-Channel MOSFETs, featuring smaller channel widths, have garnered
attention for their potential in advancing electronic devices. Channel length modulation (CLM) is
an effect observed in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs),
especially in short-channel devices. In a MOSFET, the channel length is the distance between the
source and drain regions. ID=21μCoxLW(VGS−Vth)2(1+λVDS)

Short-Channel MOSFETs were initially introduced to enhance switching speed and device
density. The reduction in channel length, however, brought about challenges such as
increasedleakage current and reduced electron mobility

Short channel mosfet

Narrow-Channel MOSFETs focus on smaller channel widths, influencing the control of charge
carriers. The pursuit of miniaturization for increased device integration led to intricate design
challenges, urging researchers to explore alternative materials and fabrication technique.

a)threshold volt SCE and NCE b)current vs volt SCE c) Narrow channel NCE
2. Application of the Topic:

1. Consumer Electronics:
o Faster Processors: Short and Narrow-Channel MOSFETs contribute to the
development of faster processors in consumer electronics.
o Higher-Density Memory Modules: These transistors are essential in the creation
of higher-density memory modules.
2. Communication Devices:
o Enhanced Signal Processing: In communication devices such as smartphones
and networking equipment
3. Power Management Circuits:
o Energy-Efficient Devices: Short and Narrow-Channel MOSFETs are integral to
power management circuits, enabling precise control over charge carriers.
o , the efficient operation of MOSFETs in power management circuits.
4. Industrial Applications:
o Control Systems: In industrial settings, these transistors are employed in control
systems for precise monitoring and adjustment of processes. Their responsiveness
and reliability are crucial for maintaining optimal performance in manufacturing
and automation processes.
5. Medical Electronics:
o Biomedical Devices: Short and Narrow-Channel MOSFETs are utilized in
biomedical devices for applications like signal processing in medical imaging.
6. Emerging Technologies:
o Quantum Computing: Neuromorphic Computing

3. Current Research of the Topic:

Recent research efforts, documented in journals like IEEE Transactions on Electron Devices, reflect a
comprehensive approach to addressing the challenges and optimizing the performance of Short and
Narrow-Channel MOSFETs.

Gate Engineering and Channel Materials: Significant strides have been made in advanced gate
engineering and the exploration of novel channel materials. High-k dielectrics and 2D materials
show promise in mitigating leakage current and improving electron mobility, providing avenues
for enhanced transistor performance.

Fabrication Techniques: Ongoing projects focus on refining fabrication techniques to precisely

control channel dimensions. The use of nanowires and innovative lithography methods is
explored to overcome the limitations imposed by miniaturization, ensuring reliable and scalable
production processes. Carbon nanotubes are explored as a channel material due to their excellent
electrical properties. Quantum dots, nanoscale semiconductor particles, are used in the channel
region, allowing for discrete charge quantization. The introduction of high-k dielectrics
(materials with high dielectric constant) and metal gate stacks helps to overcome limitations
associated with traditional silicon dioxide gate insulators.
Short channel fabrication process Narrow channel fabrication proces

Integration of Emerging Technologies: Collaborative projects between academic and industrial

partners are pushing the boundaries of Short and Narrow-Channel MOSFET applications.
Initiatives involving artificial intelligence for transistor design optimization, as well as projects
exploring the integration of these transistors into quantum computing platforms, showcase the
diverse and dynamic nature of current research.

Conclusion:

In conclusion, Short-Channel and Narrow-Channel MOSFETs represent a pivotal chapter in

semiconductor evolution. From their theoretical foundations to practical applications, these
transistors are driving advancements in electronic devices. Current research endeavors
underscore a commitment to overcoming challenges and realizing the full potential of Short and
Narrow-Channel MOSFETs in shaping the future of semiconductor technology.

References:

1.)F. Faccio, "Radiation issues in the new generation of high energy physics experiments," in Radiation
Effects and Soft Errors in Integrated Circuits and Electronic Devices, R. D. Schrimpf and D. M. Fleetwood,
Eds. Singapore: World Scientific, 2004, pp. 95–115. Link:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7348757

2.)A. Rathi, A. Dixit, P. Srinivasan, O. H. Gonzalez and F. Guarin, "RF reliability of CMOS-based power
amplifier cell for 5G mmWave applications", Proc. IEEE Int. Rel. Phys. Symp. (IRPS), pp. 4B.3-1-4B.3-6,
2022. Link: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9764465

3.)A. Rathi, P. Srinivasan, F. Guarin, and A. Dixit, "Superior mm-Wave Large Signal Power Amplifier
Reliability of p-Type FET in a 45-nm Partially-Depleted Silicon-On-Insulator RF Technology," IEEE Electron
Device Letters, vol. 43, no. 5, pp. 797, May 2022.

Link: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9729224