B.

Course Syllabus:
Semiconductor Diodes: Classification of semiconductors, conductivity of
semiconductors, Theory of PN-Junction Diode, Energy band structure, Diode
Resistance, Transition Capacitance, Diffusion Capacitance, Junction Diode
Switching Characteristics, Break-down in Junction diode, PN Diode
Applications, zener diode, Varactor Diode, Schottky Diode, LED and Laser
Diode.
Bipolar Junction Transistor: Construction, Biasing, NPN, PNP transistors,
types of configurations, Break-down in transistors, Bias stability, methods of
transistor biasing, bias compensation, heat sink
Field Effect Transistor: Construction of FET, Operation of JFET,
characteristic parameters of JFET, Transfer characteristics of FET, comparison
of JFET and BJT, applications of JFET, MOSFET, enhanced MOSFET, depletion
MOSFET, comparison of MOSFET with JFET
Amplifiers: small signal h-parameters, Classification, Single Stage Amplifier,
FET amplifier, classification based on biasing condition, multistage amplifier.
Operational Amplifier: Ideal Opamps, Opamp stages, parameters, equivalent
circuits, IF-opamp, opamp applications, Bandwidth with feedback, noise,
frequency response and compensation
Feedback Amplifiers: Basic concepts of feedback, effects of negative feedback,
type of negative feedback connections, stability of feedback amplifiers
Principle of Oscillator: classification, condition per oscillation, RC Oscillators,
Wein-Bridge Oscillators, Crystal Oscillators, wave shaping circuits
Power Supplies: Linear mode power supply, switch mode power supply
Design of electronics circuit: Design of rectifier, power supply, design of
amplifier, oscillator.

Self-Study:
The self-study contents will be declared at the commencement of semester.
Around 10% of the questions will be asked from self-study contents.

Laboratory Work:
Laboratory work will be based on above syllabus with minimum 10
experiments to be incorporated.