Inchange Semiconductor

Product Specification

2SC1894

Silicon NPN Power Transistors

DESCRIPTION
With TO-3 package
High breakdown voltage
Low collector saturation voltage
APPLICATIONS
For color TV horizontal output applications
PINNING(see Fig.2)
PIN

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=)

SYMBOL
VCBO
VCEO
VEBO

PARAMETER

Collector-base voltage

VALUE

UNIT

Open emitter

1500

Open base

600

50

M
E
S
GE

N
A
H
INC
Collector-emitter voltage

D
N
O
IC

Emitter-base voltage

R
O
T
UC

CONDITIONS

Open collector

IC

Collector current

PC

Collector power dissipation

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

TC=25

Inchange Semiconductor

Product Specification

2SC1894

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL

PARAMETER

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1A ;IB=0

600

V(BR)EBO

Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat

Collector-emitter saturation voltage

IC=4A; IB=0.8A

5.0

VBEsat

Base-emitter saturation voltage

IC=4A; IB=0.8A

1.5

ICBO

Collector cut-off current

VCB=750V; IE=0

50

IEBO

Emitter cut-off current

VEB=5V; IC=0

50

hFE

DC current gain

IC=1A ; VCE=5V

Transition frequency

IC=0.1A ; VCE=10V

Collector output capacitance

IE=0; VCB=10V;f=1MHz

fT
COB

CONDITIONS

IN

TYP.

10

MAX

UNIT

40

TOR

MHz

155

pF

C
U
D
ON

IC
M
E
ES

G
N
A
CH

MIN

Inchange Semiconductor

Product Specification

2SC1894

Silicon NPN Power Transistors

PACKAGE OUTLINE

R
O
T
UC

D
N
O
IC

M
E
S
GE

N
A
H
INC

Fig.2 outline dimensions (unindicated tolerance:0.1mm)