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BC546 548
BC546 548
Vishay Semiconductors
formerly General Semiconductor
Features
NPN Silicon Epitaxial Planar Transistors
These transistors are subdivided into three groups
A, B, and C according to their current gain.
The type BC546 is available in groups A and B,
however, the types BC547 and BC548 can be
supplied in all three groups. As complementary
types the PNP transistors BC556...BC558 are
recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
0.142 (3.6)
0.181 (4.6)
Mechanical Data
max.
0.022 (0.55)
0.098 (2.5)
Dimensions in inches
and (millimeters)
Bottom
View
Symbol
Value
Unit
Collector-Base Voltage
BC546
BC547
BC548
VCBO
80
50
30
Collector-Emitter Voltage
BC546
BC547
BC548
VCES
80
50
30
Collector-Emitter Voltage
BC546
BC547
BC548
VCEO
65
45
30
BC546, BC547
BC548
VEBO
6
5
IC
100
mA
ICM
200
mA
IBM
200
mA
-IEM
200
mA
Emitter-Base Voltage
Collector Current
Ptot
RJA
(1)
mW
(1)
C/W
500
250
Junction Temperature
Tj
150
TS
65 to +150
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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Electrical Characteristics (T
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
A
B
C
hfe
VCE = 5 V, IC = 2 mA,
f = 1 kHz
220
330
600
A
B
C
hie
VCE = 5 V, IC = 2 mA,
f = 1 kHz
1.6
3.2
6
2.7
4.5
8.7
4.5
8.5
15
A
B
C
hoe
VCE = 5 V, IC = 2 mA,
f = 1kHz
18
30
60
30
60
110
hre
VCE = 5 V, IC = 2 mA,
f = 1kHz
1.5 10-4
2 10-4
3 10-4
VCE = 5 V, IC = 10 A
90
150
270
VCE = 5 V, IC = 2 mA
110
200
420
180
290
500
220
450
800
VCE = 5 V, IC = 100 mA
120
200
400
Input Impedance
Current gain group
Output Admittance
Current gain group
DC Current Gain
Current gain group
A
B
C
A
B
C
A
B
C
hFE
A
B
C
VCEsat
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
80
200
200
600
mV
VBEsat
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
700
900
mV
VBE
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
580
660
700
720
mV
VCE = 80 V
VCE = 50 V
VCE = 30 V
VCE = 80 V, Tj = 125C
VCE = 50 V, Tj = 125C
VCE = 30 V, Tj = 125C
0.2
0.2
0.2
15
15
15
4
4
4
nA
nA
nA
A
A
A
fT
VCE = 5 V, IC = 10 mA,
f = 100 MHz
300
MHz
Collector-Base Capacitance
CCBO
VCB = 10 V, f = 1 MHz
3.5
pF
Emitter-Base Capacitance
CEBO
pF
VCE = 5 V, IC = 200 A,
RG = 2 k, f = 1 kHz,
f = 200 Hz
10
dB
Base-Emitter Voltage
Collector-Emitter
Cutoff Current
BC546
BC547
BC548
BC546
BC547
BC548
Gain-Bandwidth Product
Noise Figure
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BC546, BC547
BC548
ICES
Ratings and
Characteristic Curves (TA = 25C unless otherwise noted)
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Ratings and
Characteristic Curves (TA = 25C unless otherwise noted)
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Ratings and
Characteristic Curves (TA = 25C unless otherwise noted)
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5