MITSUBISHI <MOSFET MODULE>

FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

FM200TU-3A

ID(rms) .......................................................... 100A

VDSS ............................................................. 150V
Insulated

Type
6-elements in a pack
Thermistor inside
UL Recognized
File No.E323585

APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm
110
97 0.25
70.9
32

6.5
16

16
36

36
10

35 1.0

10
30

6.5

(SCREWING DEPTH)

25

90

14

20
32

CIRCUIT DIAGRAM

(8)GVP
(2)SVP

80

14

20
32

(7)GUP
(1)SUP

75

14

20
16.5

4
22.57

14

7-M6NUTS

3.96

9.2
5-6.5
38
6

(6)

12

3
(8.7)

67 0.25

9.1

13

14

4-6.5
MOUNTING HOLES

11.5

(6)

(15.8)
3 6.5
7

(14.5)

(14.5)

(6)

7
N

(17.5)

22.75

26 1.0
0.5

30

L A B E L

15.2
16.5

Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1

(9)GWP
(3)SWP
V

(10)GUN

(11)GVN

(12)GWN

(4)SUN
N

(5)SVN

(6)SWN

(13)

(14)

(1)SUP

(2)SVP

(3)SWP

(7)GUP

(8)GVP

(9)GWP (10)GUN (11)GVN (12)GWN

(13)TH1 (14)TH2

(4)SUN

(5)SVN

(6)SWN

A
B

Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tj = 25C unless otherwise specified.)

Symbol
VDSS
VGSS
ID
IDM
IDA
IS*1
ISM*1
PD*4
PD*4
Tch
Tstg
Visol

Item
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage

Mounting torque

Weight

Rating
150
20
100
200
100
100
200
410
560
40 ~ +150
40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600

Conditions
G-S Short
D-S Short
TC = 122C*3
Pulse*2
L = 10H Pulse*2
Pulse*2
TC = 25C
TC = 25C*3

Main terminal to base plate, AC 1 min, f=60Hz, RMS

Main Terminal M6
Mounting to heat sink M6
Typical value

Unit
V
V
A
A
A
A
A
W
W
C
C
V
Nm
Nm
g

ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified.)

Symbol

Item

IDSS
VGS(th)
IGSS
rDS(on)
(chip)
VDS(on)
(chip)

Drain cutoff current

Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage

RDD'-SS'

Internal lead resistance

Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr*1
Qrr*1
VSD*1
Rth(j-c)
Rth(j-c)
Rth(c-s)
Rth(c-s)

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance

Conditions
VDS = VDSS, VGS = 0V
ID = 10mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 100A
VGS = 15V
ID = 100A
VGS = 15V
ID = 100A
terminal-chip

Tj = 25C
Tj = 125C
Tj = 25C
Tj = 125C
Tj = 25C
Tj = 125C

VDS = 10V
VGS = 0V
VDD = 80V, ID = 100A, VGS = 15V

VDD = 80V, ID = 100A, VGS1 = VGS2 = 15V

RG = 13, Inductive load switching operation
IS = 100A

IS = 100A, VGS = 0V
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*3, *8 (1/6 module)

Min.

4.7

Limits
Typ.

4.8
9.1
0.48
0.91
1.2
1.68

820

6.5

0.1
0.09

Max.
1
7.3
1.5
6.6

0.66

50
7
4

400
250
450
200
200

1.3
0.30
0.22

Min.

Limits
Typ.
100
4000

Max.

Unit
mA
V
A
m
V
m

nF
nC

ns

ns
C
V
K/W

NTC THERMISTOR PART

Symbol
R25*6
B*6

Parameter
Resistance
B Constant

Conditions
25C*5

TTH =
Resistance at TTH = 25C, 50C*5

Unit
k
K

*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).

*2: Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj max rating.
*3: TC measured point is just under the chips. If use this value, Rth(s-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using thermally conductive grease of =0.9 W/(mK).
Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
Chip

OUTPUT CHARACTERISTICS
(TYPICAL)
Chip
VGS = 20V
15V

160

200
VDS = 10V

12V
10V

120
9V

80

40

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

200

150

Tj = 25C

Tj = 125C
100

50

Tj = 25C
0

0.4

0.8

1.2

1.6

2.0

VGS = 12V
8

VGS = 15V

6
4
2
0

20

40 60

80 100 120 140 160

GATE THRESHOLD VOLTAGE VGS(th) (V)

DRAIN-SOURCE
ON-STATE RESISTANCE rDS(on) (m)

10

6
5

3
2
1
0

20

40 60

80 100 120 140 160

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)

7
5

Tj = 25C
2.5
2.0
1.5
ID = 200A

1.0

ID = 100A

0.5

CAPACITANCE (nF)

DRAIN-SOURCE
ON-STATE VOLTAGE VDS(on) (V)

VDS = 10V
ID = 10mA

102

3.0

3
2

12

ID = 50A
16
20

GATE-SOURCE VOLTAGE VGS (V)

Ciss

101
7
5
3
2

Coss

100
7
5
3
2

15

JUNCTION TEMPERATURE Tj (C)

DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
Chip

13

JUNCTION TEMPERATURE Tj (C)

11

GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)

DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
Chip
ID = 100A

GATE-SOURCE VOLTAGE VGS (V)

DRAIN-SOURCE VOLTAGE VDS (V)

12

Crss
VGS = 0V

101 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

GATE CHARGE CHARACTERISTICS

(TYPICAL)

16
VDD = 60V

12

VDD = 80V

103

ID = 100A

200

103

400

600

800

SOURCE CURRENT IS (A)

GATE-SOURCE VOLTAGE VGS (V)

20

102
7
5
3
2

0.6

0.7

0.8

0.9

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

104
7
5

td(on)

tr
102
7
5

tf

101 1
10

5 7 102

Conditions:
VDD = 80V
VGS = 15V
RG = 13
Tj = 125C
Inductive load
2

td(on)

103

tr

7
5
3
2

102
7
5
3
2

20

40

60

tf
Conditions:
VDD = 80V
VGS = 15V
ID = 100A
Tj = 125C
Inductive load
80 100 120 140

DRAIN CURRENT ID (A)

GATE RESISTANCE RG ()

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

3
2

100

Eon

Err
Conditions:
VDD = 80V
VGS = 15V
RG = 13
Tj = 125C
Inductive load

101
7
5

102 1
10

td(off)

3
2

101

5 7 103

7
5

3
2

SWITCHING TIME (ns)

101

1.0

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

Eoff
2

5 7 102

DRAIN CURRENT ID (A)

5 7 103

101
SWITCHING ENERGY (mJ/pulse)

SWITCHING TIME (ns)

Tj = 25C

Tj = 125C

SOURCE-DRAIN VOLTAGE VSD (V)

SWITCHING ENERGY (mJ/pulse)

GATE CHARGE QG (nC)

td(off)

3
2

VGS = 0V

7
5

101
0.5

1000 1200

7
5

7
5

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
Chip
(TYPICAL)

Eon

7
5
3
2

Eoff
Conditions:
VDD = 80V
VGS = 15V
ID = 100A
Tj = 125C
Inductive load

100
7
5

Err

3
2

101
7
5
3
2

102

20

40

60

80

100 120 140

GATE RESISTANCE RG ()

Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE
(TYPICAL)
103

103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101

100

Irr (A), trr (ns)

3
2

trr

102
7
5

Irr
3
2

Conditions:
VDD = 80V
VGS = 15V
RG = 13
Tj = 25C
Inductive load

101
7
5
3
2

100 1
10

5 7 102

7
5

NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)

7
5

3
2

101

101

7
5

7
5
3
2

3
2

102

102

7
5
3
2

7
5
3 Single pulse
2 Tj = 25C

Per unit base = Rth(j-c) = 0.30K/W

103
105 2 3 5 7104 2 3 5 7 103

103

5 7 103

TIME (s)

SOURCE CURRENT IS (A)

CHIP LAYOUT
(110)
(97)
90.6
57.6
24.6
P

48.4

29.6

TrUP

13

TrVP

TrWP

TrVN

TrUN

12

(90)

(80)

(67)

14

TrWN

LABEL SIDE

25.6
58.6
91.6

The company name and product names herein are the trademarks and registered trademarks of the respective companies.
Mar. 2013

<MOSFET MODULES >

HIGH POWER SWITCHING
USE INSULATED TYPE

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March-2013