Transistor and Their Characteristics - Lesson-1 Junction Transistor

Transistor and their
Characteristics
Lesson-1 Junction Transistor
2008
Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,
1. Junction Transistor
Definition
The transferred-resistance or transistor
is a multi-junction device that is capable
of
Current gain
Voltage gain
Signal-power gain
2008
Bipolar junction transistor

Invented
in 1948 by Bardeen, Brattain and
Shockley
Contains
three adjoining, alternately doped

semiconductor regions: Emitter (E), Base (B), and
Collector (C)
The
middle region, base, is very thin compared

to the diffusion length of minority carriers
Two
2008
kinds: npn and pnp

Bipolar junction transistor BJT

Definition
The Bipolar junction transistor is an active

device that works as a voltage-controlled
current source and whose basic action is
control of current at one terminal by
controlling voltage applied at other two
terminals.
2008
Junction Transistor Unit 4 Lesson 1" , Raj Kamal,
Bipolar Junction Transistor Representation
NPN
2008
PNP
2. Transistor Current
Components
2008
BJT circuit Current Components
IE = IB + IC
and
VEB + VBC + VCE = 0
VCE = VEC
As shown, the currents are positive quantities when the

transistor is operated in forward active mode.
2008
Meaning of Forward biasing
When the p side is applied +ve and n side

negative in a junction and applied voltage is
grater than a threshold 0.65 V for Silicon
(Si)
2008
Meaning of Reverse biasing
When the p side is applied -ve and n side

+ve in a junction and applied voltage is
between 0 to a breakdown voltage
2008
3. Transistor as Amplifier
2008
10
Three configurations
PNP
PNP
IE
IB
BJT Common
Base
configuration
2008
PNP
IC
BJT Common BJT Common

Collector
Emitter
configuration configuration
11
Six Problems
Draw circuits of CB, CE, CC

configurations for npn and pnp transistors
Show current directions
2008
12
npn transistor in
a simple circuit, known as
common-emitter
amplifier
2008
13
Characteristics of Transistor Amplifier in three

regions of operations
2008
14
Active region
Active region
Saturation region
Saturation region
Input or driving Point

Characteristics of Common
Base transistor Amplifier
2008
Input or driving Point

Emitter transistor
Amplifier
15
Active region
Saturation region
Active region
region
Cut-off Saturation
region
Output Collector
Base transistor Amplifier
2008
Cut-off region
Output Collector
Emitter transistor
Amplifier
16
First Approximation Relationship

between IC and IE
IC
IE
BJT Common
Base
configuration
2008
17
The collector current is being controlled by the B-E voltage, or

the current in the one part of the device is being controlled by
the voltage in another part - transistor action
Since the B-E junction is forward biased, holes from the base
are injected into the emitter. However, these injected holes
do not contribute to the collector current and are therefore
not part of the transistor action
To design a useful device, we need mathematical expressions
for the minority carrier concentrations shown in the figure
above.
There are three modes of operation we must consider
Forward-active (B-E FB, B-C RB)

Cut-off (B-E RB, B-C RB)
Saturation (B-E FB, B-C FB)
2008
18
BJT biasing modes
2008
19
Cut--off defined as region of characteristics IC = 0

Cut
In the cut-off region, the base emitter and

collector base junctions of transistor are
reverse biased IC IE 0
2008
20
Saturation- region defined as region of

characteristics left of VCB = 0 and IC increase
exponentially with VCB increases toward 0
In the saturation region region, the base

emitter and collector base junctions of
transistor are forward biased
2008
21
Active - region defined as region of

characteristics right of VCB = 0 and IC first
increases exponentially with VCB increases
toward 0.7 V in Si transistor and then
becomes constant
In the active region region, the base emitter and

collector base junctions of transistor are forward
and reversed biased respectively IC IE 0
and is in mA IC
2008
22
Operation in the forward-active

mode
B-E junction is forward biased so
electrons
can be injected from the emitter to the
base, B-C
junction is reverse biased.
2008
23
4. Transistor Construction
2008
24
BJT structure - three regions, two p-n junctions, three

terminals (emitter, base, collector)
Thin
2008
Thin
25
Construction
Devices can be p-n-p, or n-p-n structures

Width of the base is small compared to the
minority carrier length and is about 1/150 of
total width, number of free carriers are
small as doping level is 1/10 th or less
compared to collector)
Emitter is normally heavily doped, the
collector has light doping
2008
26
Summary
We learnt
(i) pnp transistor
(ii) npn transistor
(iii) Current Components
(iv) Three configurationsCommon base, common emitter
and Common collector
2008
27
We learnt
(v) Three regions- cut-off,
saturation and active
(vi) Transistor construction
2008
28
End of Lesson 1
2008
29

Transistor and Their Characteristics - Lesson-1 Junction Transistor

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Transistor and Their Characteristics - Lesson-1 Junction Transistor

Uploaded by

Copyright:

Available Formats

Transistor and their

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Bipolar junction transistor

in 1948 by Bardeen, Brattain and

three adjoining, alternately doped

middle region, base, is very thin compared

kinds: npn and pnp

Bipolar junction transistor BJT

The Bipolar junction transistor is an active

Junction Transistor Unit 4 Lesson 1" , Raj Kamal,

Bipolar Junction Transistor Representation

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

BJT circuit Current Components

VEB + VBC + VCE = 0

As shown, the currents are positive quantities when the

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Meaning of Forward biasing

When the p side is applied +ve and n side

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Meaning of Reverse biasing

When the p side is applied -ve and n side

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

BJT Common BJT Common

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Draw circuits of CB, CE, CC

Junction Transistor Unit 4 Lesson 1" , Raj Kamal,

Junction Transistor Unit 4 Lesson 1" , Raj Kamal,

Characteristics of Transistor Amplifier in three

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Input or driving Point

Input or driving Point

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

First Approximation Relationship

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

The collector current is being controlled by the B-E voltage, or

Forward-active (B-E FB, B-C RB)

Junction Transistor Unit 4 Lesson 1" , Raj Kamal,

BJT biasing modes

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Cut--off defined as region of characteristics IC = 0

In the cut-off region, the base emitter and

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Saturation- region defined as region of

In the saturation region region, the base

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Active - region defined as region of

In the active region region, the base emitter and

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Operation in the forward-active

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

BJT structure - three regions, two p-n junctions, three

Junction Transistor Unit 4 Lesson 1" , Raj Kamal,

Devices can be p-n-p, or n-p-n structures

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

Junction Transistor Unit 4 Lesson 1- " , Raj Kamal,

You might also like