What is the Difference between Low Power Diode and High Power Diode?

The n- layer (epitaxial) only appears at High Power Diodes.

Function of that Layer is to absorb the Depletion Layer formed during the Reverse bias of PN
Junction.
The n-layer decides the Reverse Breakdown Voltage of the Device.
When a lightly doped crystalline layer is grown over a substrate that is heavily doped, then a
higher breakdown voltage is achieved, and at the same time the collector resistance is kept low.
This basically provides for a higher operating speed and improved bipolar performance. However,
the resistance increases during forward bias, which is taken care of with various counter
measures.
Appearance of quasi saturation region in the o/p characteristics of a power BJT is a direct
consequence of introduction of he drift layer in the structure of signal BJT. Base collector region is
forward biased but drift region is not completely shorted out by the minority carriers. It exhibits
greater resistance due to light doping which is evident in the o/p characteristics. Since resistivity
of drift region is significant, the total voltage drop across the device is higher for a given collector
current than in the hard saturation region. Base current retains some control over the collector
current.