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Mar 30 2013
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Description
Applications
Chemical Properties
Thermal, Mechanical and Optical Properties
Safety Information
Description
Aluminium gallium arsenide AlxGa1-xAs) is a semiconductor material having almost
the same lattice constant as gallium arsenide but a bigger bandgap. The x in the
formula is a number between 0 and 1 indicating an alloy between gallium arsenide and
aluminium arsenide.
The bangap is in the range 1.42 eV (GaAs) to 2.16 eV (AlAs). The bandgap is direct
when x < 0.4.
Applications
The applications of aluminium gallium arsenide are:
It is used as a barrier material in GaAs-based heterostructure devices.
The electrons are confined to a gallium arsenide region by the AlGaAs layer. An
example of this kind of device is a quantum well infrared photodetector (QWIP).
It also finds application in 1064 nm (Infra-red) laser diodes.
Chemical Properties
The chemical properties of aluminium gallium arsenide are:
Chemical Properties
Chemical Formula
Group
Band Gap
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AlGaAs
III-V
1.42 2.16 eV
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Crystal Structure
Zinc Blende
Symmetry Group
TD2-F43m
Lattice Constant
5.6533+0.0078x
h2>Electrical Properties
The electrical properties of aluminium gallium arsenide are:
Electrical Properties
x=0.1 2.1105 cm-3
x=0.3 2.1103 cm-3
Electron Mobility
0.452
-1
V-1 s-1
Hole Mobility
02/s
0.452/s
9.2-24x+18.5x2 cm2/s
x=02/s
Electrical Resistivity
0.452/s
1414 C
Density
2.329 g cm-3
Young's Modulus
130-188 GPa
Shear Modulus
51-80 GPa
(7.55+0.26x)1011 dyn cm-2
Bulk Modulus
0.33+0.12x J g-1C-3
Thermal Conductivity
0.31-1.23x+1.462 cm2s-1
Thermal Diffusivity
2.6x10-6 C-1
n=3.3-0.53x+0.09x2
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Safety Information
The toxicology of aluminium gallium arsenide has not been investigated completely.
The dust may irritate the eyes, skin and lungs.
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