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(Pleose write your Roll No. immediately) First Term Examination | ViSemester [B. tech. ] February 2015 Paper Code: ETEC-302 Sub.: Microwave Engg. ‘Max. Marks: 30 Time: 1 Hrs. Not {ttempt Q. No.1 which is compulsory and any two more questions from remaining. Q.1. (afDefine the dominant mode, higher mode and degenerate mode. Write the dominant mode of rectangular waveguide & circular waveguide. iscuss the term unloaded Q, loaded Q, critical coupled Q & under coupled Q with reference to a cavity resonator. _As) Explain from fundamental principle why @ waveguide behaves like a high pass filter? Jd) Write Maxwell's equations in integral form. pf What will be the spacing between centers of two holes in directional coupler and why? (2x5) Q.2. (a) An air filled rectangular waveguide has dimension of a=6em and b=4em. The signal frequency is 3000MHz. Compute the following for the Dominant mode. |) Cut off Frequency ii) Wavelength in waveguide ill) Phase velocity iv) Wave impedance (b) Find out the S- Matrix of Magic- Tee. (545) Q.3. (a) A 90W power source is connected to the |/P of a directional coupler with coupling factor is 2048, directivity is 3548 and insertion loss is 0.5 dB. Find the O/P powers at the received, forwarded and backward port. Assume all ports are matched. (b) Write short note on: (1) Isolator {ll) Variable Attenuator (54(2.5x2)) ‘ Q.4, (a) Show that TMo, and TMo modes in a rectangular waveguide do not exist. (b) What are Cavity Resonators? Derive the equation of resonating frequency for a circular cavity resonator. (+5) (Please wrive your Roll No. impsediatel Roll No, First — Term Examination Vii Semester [B. Tech. | Feb 2015 Paper Code: ETEC 308 Sub: VLSI Design Time: 1 Hrs, Max. Marks :30 Note: Attempt Q. No, I compulsory and any two more Questions Ali questions carry equal marks. Assume the missing data, ifany. Qu Attempt the following questions i) What is strong surface inversion. What is the quantum of surface to bulk voltage for strong surface inversion for nMOS with source and bulk terminal short circuited. Explain corresponding energy band positioning for this nMOS FET. 3 ii) Show that the process trans-conduetance factor K’ scales as $ for both types of scaling . 2 iii) Find drain current for an n-channel MOS transistor with 1:~600cm?/V's; Tx10%F/em®: W=20um; L=2ym; Vy=1.0V; Vo=3V; Vor2V; Vs-OV: Vp-0V. 3 iv) Discuss scaled super buffer circuit with 3 inverter stages scaled up by a factor of 2 2 A CMOS inverter with Vros=0.6V, Vrop=-0.7V. k,=200HA Vs ky =80HAN™ biased with Vp5=3.3V. 4 pulso signal of time period 40pts with full swing of OV to Vpp is applied. Calculate the noise margins of the circuit under operation. 6 ii) Discuss steps required to transfer a pattern onto wafer. Differentiate between positive photo-resist and negative photo-resist 4 Q3. i) Find the aspect ratio of PMOS for an inverter with Viqn~0.6V; Vinp=l0.6V: up=230em’/Vs; 80cm IVS: toxeny =tor/=500A,° Vpp=5V; aspect ratio of ‘NMOS is 8. 5 ii) With the help of valence band of combined MOS system without extemal bias differentiate between enhancement type and depletion type MOSFET. 5S se — \ \ Page Lof 2 | car mode of operatior i oF the circuit given below the data find Vjo for W/L=1.05 ty. 345A; (26F/=0.64V characteristics are Page 2 of 2 (Please write your Roll No. immediately) Roll No, First- Term Examination February, 2015 6" Semester [B.Tech.] ECE Sub: Microprocessor Systems -I Paper code : ETEC-304 ‘Time: 1 Hour ‘Max. Marks: 30 Note: |. Attempt three Questions in total. 2. QNo. Lis compulsory. Attempt any two more questions from the remaining. QU. @) Clear accumulator using single instruction in three different ways. (5) (b) Draw and explain Flag register of 8085 microprocessor. @) (© Differentiate between the instructions: i) XTHL and XCHG Q) il) PUSH and POP (@ Define the terms : Instruction cycle, Machine cycle and T-state. 5) (© What is a subroutine ? Explain te instructions associated with a subroutine. Oy Q2 (a) Explain the following signals of 8085; i) READY ii) ALE iii) TRAP iv)HOLD-—sv) JO/M 6) (b) Sixteen bytes of data are stored in memory location 2750H to 275FH. Draw the flowchart and write an assembly language program to transfer entire block of data to new memory locations starting at 2800H. © Q3. (a) Explain the interrupts of 8085 in detail with the help of suitable diagram. © (b) Draw and explain the Timing diagram of the instruction:. MOV M,A © (Q4. (a) Explain the addressing modes of 8085 microprocessor giving at least two examples in each case. 6) (b) Calculate the time delay required to complete the execution of the following instructions: (5) (Assume clock frequency is 2 MHz) Mnemonics T-states MVIC, FFH 7 Loop : DCRC 4 JNZ LOOP 107 (Please write your roll no immediately) Roll FIRST TERM EXAMINATION VI Semester[B. Tech] FEB. 2015 Paper Code: ETEC-310 SUB: TELECOMMUNICATION NETWORKS Time: 1 hr Max Marks: 30 Note: Attempt question no. 1 which is compulsory and any two more questions from + remaining. QI. A. If the noise power in a channel is 0.1dbm and signal power is 10mW, find S/N ratio: (2) B._Given that MITR=4hrs and MTBF=2000hrs. Calculate the unavail and dual processor systems for 10 yrs. (3). ity for single C. In a 100 line folded n/w find the number of simultaneous calls and the no. of switching elements required for non-blocking operation.(2) D.A 7-bit uniform PCM system has a bit rate of S6kbps. Calculate the SQR when the /P is a sine wave covering the full dynamic range of the system. Also calculate the dynamic.range of the sine wave if the SQR is to be atleast 30dB." (3) QA. Explain Step by Step switching in detail. (5) OR Design a 100 line strowger exchange using 10-outlet uniselectors, showing connections when 12 dials 26. How many switching elements are used and how many simultaneous calls are supported in this exchange. (5) B. Explain Diagonal Crossbar Matrix. How many switching elements are required for this matrix. (6) Q3. A. Derive the blocking probability of a three stage network using Lee’s Graph. (6) B. Find the switch advantage atio ofa three stage network with (a)N=128 (b)N=32768. (4) Q4.A. Explain the three modes of Centralized SPC. (6) “ B, Explain the principle of vocoders, giving description of LPC vocoder. (4) First TERM EXAMINATION SIXTH SEMESTER [B.Tech FeaRuaRy 2015, _—__ Paper Code: ETEC-312 Subject: Digital Signal Processing & its Applications Time: 1 Hr Maximum Marks: 30 Note: Q.No.I is compulsory and attempt any one from the remaining QI (@) State & explain the Time reversal and Complex Conjugate property of DFT. (3) (b) What are the cases, when an IIR filter is preferable over an FIR filter? 8) (©) Explain the Overlap Save method in Linear filtering? @) * (d) Compute the 4 point DFT of the sequence x() = {cos(3z/8)n} using DIF FFT algorithm, (5) 2 (a) Find the response of an FIR filter with impulse response (73) A(7) = {1,2,4} to the input sequence x(n) = {1,3} using circular convolution (b) Design a filter with : (73) el -al4Swsald iae"y-{ 0, 2/4

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