DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3900

SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3900 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

PART NUMBER

PACKAGE

2SK3900-ZP

TO-263 (MP-25ZP)

FEATURES
Super low on-state resistance

(TO-263)

RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A)

RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 41 A)
Low C iss: C iss = 3500 pF TYP.
Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V)

VDSS

60

Gate to Source Voltage (VDS = 0 V)

VGSS

20

Drain Current (DC) (TC = 25C)

ID(DC)

82

ID(pulse)

246

Total Power Dissipation (TC = 25C)

PT1

104

Total Power Dissipation (TA = 25C)

PT2

1.5

Channel Temperature

Tch

150

Tstg

55 to +150

Drain Current (pulse)

Note1

Storage Temperature
Single Avalanche Energy

Note2

EAS

141

mJ

Repetitive Avalanche Current

Note3

IAR

37.5

Repetitive Avalanche Energy

Note3

EAR

141

mJ

Notes 1. PW 10 s, Duty Cycle 1%

2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H
3. RG = 25 , Tch(peak) 150C

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17175EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan

2004

2SK3900
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

10

Gate Leakage Current

IGSS

VGS = 20 V, VDS = 0 V

10

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.0

2.5

| yfs |

VDS = 10 V, ID = 41 A

28.1

56

RDS(on)1

VGS = 10 V, ID = 41 A

6.3

8.0

RDS(on)2

VGS = 4.5 V, ID = 41 A

7.4

10

Gate Cut-off Voltage

Forward Transfer Admittance

Note

Drain to Source On-state Resistance

Note

Input Capacitance

Ciss

VDS = 10 V

3500

pF

Output Capacitance

Coss

VGS = 0 V

660

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

240

pF

Turn-on Delay Time

td(on)

VDD = 30 V, ID = 41 A

18

ns

VGS = 10 V

11

ns

RG = 0

62

ns

5.5

ns

Rise Time

tr

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

VDD = 48 V

65.5

nC

Gate to Source Charge

QGS

VGS = 10 V

11.5

nC

QGD

ID = 82 A

16.5

nC

VF(S-D)

IF = 82 A, VGS = 0 V

0.95

Reverse Recovery Time

trr

IF = 82 A, VGS = 0 V

41

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/s

61

nC

Gate to Drain Charge

Body Diode Forward Voltage

Note

1.5

Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25

D.U.T.
L

50

PG.
VGS = 20 0 V

TEST CIRCUIT 2 SWITCHING TIME

RL
RG

PG.

VDD

VGS
VGS
Wave Form

VGS

10%

90%

VDD
VDS
90%

IAS

VDS

ID

VDS

= 1 s
Duty Cycle 1%

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA
PG.

50

10%

10%

tr

td(off)

Wave Form

VDD

Starting Tch

90%

VDS

VGS
0

BVDSS

RL
VDD

Data Sheet D17175EJ1V0DS

td(on)
ton

tf
toff

2SK3900
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

120

150
PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

100
80
60
40
20

125
100
75
50
25
0

0
0

25

50

75

100

125

150

175

25

50

75

100

125

150

175

TC - Case Temperature - C

TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
RDS(on) Limited
(at VGS = 10 V)

ID(pulse) = 246 A
100 s

100

1 ms
ID(DC) = 82 A
10 ms

10
Power Dissipation Limited

1
TC = 25C
Single pulse

0.1
0.1

10

100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

1000

1000

Single pulse

100
Rth(ch-A) = 83.3C/W
10
Rth(ch-C) = 1.2C/W
1

0.1

0.01
100

1m

10 m

100 m
1
PW - Pulse Width - s

Data Sheet D17175EJ1V0DS

10

100

1000

2SK3900

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

1000

250

ID - Drain Current - A

ID - Drain Current - A

300

VGS = 10 V
200
4.5 V

150
100
50

100

Tch = 55C
25C
10
75C
150C
1

0.1
0.01

Pulsed

0
0

VDS = 10 V
Pulsed

0.001
5

VDS - Drain to Source Voltage - V

2.5
2
1.5
1
0.5
0
-25

25

75

125

175

1
VDS = 10 V
Pulsed

0.1
0.1

20
16
12
VGS = 4.5 V
10 V

0
1

10

100

ID - Drain Current - A

10

100

1000

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m

RDS(on) - Drain to Source On-state Resistance - m

Pulsed

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

Tch = 55C
25C
75C
150C
10

Tch - Channel Temperature - C

24

100

| yfs | - Forward Transfer Admittance - S

VGS(off) - Gate Cut-off Voltage - V

-75

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

VDS = 10 V
ID = 1 mA

3.5

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

24

ID = 41 A
Pulsed

20
16
12

Data Sheet D17175EJ1V0DS

8
4
0
0

12

16

VGS - Gate to Source Voltage - V

20

2SK3900

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

100000

20

Ciss, Coss, Crss - Capacitance - pF

16
12
VGS = 4.5 V
8

10 V

ID = 41 A
Pulsed

C iss
1000

C oss

C rss

100

10
0.1

-75

-25

25

75

125

175

1000

td(off)
td(on)
tr

10

10

100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VDD = 30 V
VGS = 10 V
RG = 0

100

VDS - Drain to Source Voltage - V

Tch - Channel Temperature - C

VDS - Drain to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

10000

SWITCHING CHARACTERISTICS

tf
1

60

12
ID = 82 A

VDD = 48 V
30 V
12 V

50

10

40

30

VGS

20

10

VDS

0.1

10

100

0
0

10

ID - Drain Current - A

20

30

40

50

60

70

80

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

1000

1000
trr - Reverse Recovery Time - ns

IF - Diode Forward Current - A

VGS = 0 V
f = 1 MHz

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

100
VGS = 10 V
10

0V

1
0.1

100

Pulsed

0.01
0

0.5

1.5

VF(S-D) - Source to Drain Voltage - V

10
di/dt = 100 A/s
VGS = 0 V

1
0.1

10

100

IF - Diode Forward Current - A

Data Sheet D17175EJ1V0DS

2SK3900

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR

100
Energy Derating Factor - %

IAS - Single Avalanche Current - A

1000

100
IAS = 37.5 A
EAS = 141 mJ
10 VDD = 30 V
RG = 25
VGS = 20 0 V
Starting Tch = 25C
1
0.01

0.1

VDD = 30 V
RG = 25
VGS = 20 0 V
IAS 37.5 A

80
60
40
20
0

10

25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

L - Inductive Load - mH

Data Sheet D17175EJ1V0DS

2SK3900
PACKAGE DRAWING (Unit: mm)

0.5

4.450.2
1.30.2

0.025 to
0.25

0.6
0.750.2

0.2

0 to
2.54

2.540.25

9.150.3

8.0 TYP.

7.88 MIN.
4

15.250.5

10.00.3
No plating

1.350.3

TO-263 (MP-25ZP)

8o

0.25

3
1.Gate
2.Drain

2.5

3.Source
4.Fin (Drain)

EQUIVALENT CIRCUIT
Drain

Body
Diode

Gate

Gate
Protection
Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

Data Sheet D17175EJ1V0DS

2SK3900

The information in this document is current as of May, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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