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Chapter 4 Bipolar Junction Transistors (BJTS)
Chapter 4 Bipolar Junction Transistors (BJTS)
ChapterOutline
4.1DeviceStructureandPhysicalOperation
4.2CurrentVoltageCharacteristics
4.3BJTCircuitsatDC
4.4ApplyingtheBJTinAmplifierDesign
4.5SmallSignalOperationandModels
4.6BasicBJTAmplifierConfigurations
4.7BiasinginBJTAmplifierCircuits
4.8DiscreteCircuitBJTAmplifiers
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4.1DeviceStructureandPhysicalOperation
Physicalstructureofbipolarjunctiontransistor(BJT)
Bothelectronsandholesparticipateintheconductionprocessforbipolardevices
BJTconsistsoftwopn junctionsconstructedinaspecialwayandconnectedinseries,backtoback
Thetransistorisathreeterminaldevicewithemitter,base andcollector terminals
Fromthephysicalstructure,BJTscanbedividedintotwogroups:npn andpnp transistors
Modesofoperation
ThetwojunctionsofBJTcanbeeitherforwardorreversebiased
TheBJTcanoperateindifferentmodesdependingonthejunctionbias
TheBJToperatesinactivemodeforamplifiercircuits
Switchingapplicationsutilizeboththecutoffandsaturationmodes
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Mode
EBJ
CBJ
Cutoff
Reverse
Reverse
Active
Forward
Reverse
Saturation
Forward
Forward
42
Operationofthenpn transistorintheactivemode
ElectronsinemitterregionsareinjectedintobaseduetotheforwardbiasatEBJ
MostoftheinjectedelectronsreachtheedgeofCBJbeforebeingrecombinedifthebaseisnarrow
ElectronsattheedgeofCBJwillbesweptintocollectorduetothereversebiasatCBJ
Emitterinjectionefficiency ( )=iEn/(iEn+iEp)
Basetransportfactor (T)=iCn/iEn
Commonbasecurrentgain ()=iCn/iE = T <1
TerminalcurrentsofBJTinactivemode:
iE(emittercurrent)=iEn(electroninjectionfromEtoB)+iEp(holeinjectionfromBtoE)
iC(collectorcurrent)=iCn(electrondrift)+iCBO(CBJreversesaturationcurrentwithemitteropen)
iB(basecurrent)= iB1(holeinjectionfromBtoE)+iB2(recombinationinbaseregion)
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Terminalcurrents:
Basecurrent:
AE qD pE ni2 v
e
Holeinjectionintoemitterduetoforwardbias: iB1 AE qD pE dpE ( x) / dx
BE
/ VT
N E L pE
Eelectronholerecombinationinbase: iB 2 Qn / n AE q nB (0)W / n
Totalbasecurrent: iB iB1 iB 2
Emittercurrent: iE iC iB
1
2
AE qWni2 vBE / VT
e
2 N B n
D pE N B W 1 W 2 vBE / VT iC
IS (
)e
DnB N E L pE 2 DnB n
i
I
1
iC C S e v
BE
/ VT
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LargesignalmodelandcurrentgainforBJTinactiveregion
Commonemitter currentgain
(1)
iC
iB
Commonbase currentgain
(+1)
iE
iC
iB
iE
1
D pE N B W 1 W 2 1
iC
) /(1 )
Commonemittercurrentgain: (
iB
DnB N E L pE 2 DnB n
Commonbasecurrentgain: /( 1)
Thestructureofactualtransistors
Inmodernprocesstechnologies,theBJTutilizesaverticalstructure
Typically, issmallerandclosetounitywhile islarge
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Operationofthenpn transistorinthesaturationmode
Saturationmode:bothEBJandCBJareforwardbiased
Carrierinjectionfrombothemitterandcollectorintobase
Baseminoritycarrierconcentraiton changeaccordingly leadingtoreducedslopeasvBC increases
CollectorcurrentdropsfromthevalueinactivemodefornegativevCB
ForagivenvBE,iC dropssharplytozeroatvCB around0.5VandvCE around0.2V
BJTinsaturation:VCEsat =0.2V
i
Currentgainreduces(from toforced): forced C saturation
iB
np0exp(vBE/VT)
np0exp(vBC/VT)
vBC increases
np0
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EbersMollmodel
InEMmodel,theEBJandCBJarerepresentedbytwobacktobackdiodesiDE andiDC
CurrenttransportedfromonejunctiontotheotherispresentedbyF (forward)andR (reverse)
EMmodelcanbeusedtodescribetheBJTinanyofitspossiblemodesofoperation
EMmodelisusedformoredetaileddcanalysis
v /V
1) iDC I SC (e v / V 1) F I SE R I SC I S
Thediodecurrents: iDE I SE (e
iC iDC F iDE
iB iE iC
Theterminalcurrents: iE iDE R iDC
BE
BC
ApplicationoftheEMmodel
Theforwardactivemode:
1
1
iC I S e vBE /VT I S
R
1
I
1
iB S e vBE / VT I S
F
R
F
I
1
iE S e vBE / VT I S 1
F
iDE
RiDC
iC I S e vBE / VT I SC e vBC / VT
iE I SE e
ISe
iC
iE
Thesaturationmode:
v BE / VT
iDC
FiDE
iB
vBC / VT
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Thecutoffmode
ICBO (CBJreversecurrentwithemitteropencircuited)
ICBO =(1RF)ISC
BothEBJandCBJarereversebiased
Inrealcase,reversecurrentdependsonvCB
ICEO (CBJreversecurrentwithbaseopencircuited)
ICEO =ICBO/(1F)
F isalwayssmallerthanunitysuchthat ICEO >ICBO
CBJcurrentflowsfrom(CtoB)so CBJisreversebiased
EBJcurrentflowsfrom(EtoB)so EBJisslightlyforwardbiased
(3) RISC
iB
(3)iDE
iC
iE =0
(2)RISC
iE
iC
FiDE (4)
(2)RISC
RFISC (4)
ISC (1)
ISC (1)
iB =0
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Thepnp transistor
Transistorstructure:
emitterandcollectorareptype
baseisntype
Operationofpnp issimilartothatofnpn
Operationofpnp intheactivemode
Collectorcurrent: iC I S e
Basecurrent: iB iC /
Emittercurrent: iE iC iB
vEB / VT
LargesignalmodelandcurrentgainforBJTinactiveregion
Commonemitter currentgain
(1)
iC
iB
Commonbase currentgain
(+1)
iE
iC
iB
iE
1
Exercise4.1(Textbook)
Exercise4.3(Textbook)
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4.2CurrentVoltageCharacteristics
Circuitsymbols,voltagepolaritiesandcurrentflow
Terminalcurrentsaredefinedinthedirectionascurrentflowinactivemode
Negativevaluesofcurrentorvoltagemeaninoppositepolarity(direction)
SummaryoftheBJTcurrentvoltagerelationshipsintheactivemode
TheterminalcurrentsforaBJTinactivemodesolelydependonthejunctionvoltageofEBJ
TheratiosoftheterminalcurrentsforaBJTinactivemodeareconstant
Thecurrentdirectionsfornpn andpnp transistorsareopposite
npn transistor
pnp transistor
iC I S evBE /VT
i
I
iB C S e vBE / VT
iC I S evEB / VT
i
I
iB C S e vEB / VT
iE
iC
IS
e vBE / VT
iE
iC
IS
e vEB / VT
iE iC iB
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CurrentvoltagecharacteristicsofBJT
TheiCvCB characteristics
TheiCvCE characteristics
TheEarlyeffect
AsCBJreversebiasincreases,theeffectivebasewidthWeff reducesduetotheincreasingdepletion
ForaconstantjunctionvoltagevBE:
TheslopeofnB(x)increases iC increases
nB (0)
VZ
ChargestorageQn reduces iB decreases
VY
Currentgain and increases
VX
Earlyvoltage (VA)isusedforthelinearapproximationofEarlyEffect
LineardependenceofiC onvCE: iC I S e v /V (1 vCE / VA )
BE
i
Exhibitfiniteoutputresistance: ro C
vCE
V
A
v BE constant
IC
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nB0
0
WX WY WZ
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Commonbaseoutputcharacteristics
Earlyeffect
breakdown
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Commonemitteroutputcharacteristics(I)
iC versusvCE plotwithvariousvBE asparameter
Commonemittercurrentgainisdefinedas =iC / iB
TheBCJturnsonwithapositivevBC atlowvCE
BJToperatesinsaturationmode
TheiC curvehasafiniteslopeduetoEarlyeffect
ThecharacteristicslinesmeetatvCE =VA
VA iscalledtheEarlyVoltage (~50to100V)
Commonemitteroutputcharacteristics(II)
PlotofiC versusvCE withvariousiB asparameter
BJTinactiveregionactsasacurrentsourcewith
high(butfinite)outputresistance
Thecutoffmodeincommonemitterconfiguration
isdefinedasiB =0
Currentgain:largesignalbdc iC/iB andbac iC/iB
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Earlyeffect
breakdown
413
Saturationofcommonemitterconfiguration
Insaturationregion,itbehavesasaclosedswitchwithasmallresistanceRCEsat
ThesaturationIV curvecanbeapproximatedbyastraightlineintersectingthevCE axisatVCEoff
ThesaturationvoltageVCEsat VCEoff+ICsatRCEsat
VCEsat isnormallytreatedasaconstantof0.2VforsimplicityregardlessthevalueofiC
Incremental insaturationislowerthanthatinactiveregion: forced ICsat/IB <
Overdrivefactor /forced
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Transistorbreakdown
Transistorbreakdownmechanism:
Avalanchebreakdown:avalanchemultiplicationmechanismtakesplaceatCBJorEBJ
Basepunchthrougheffect:thebasewidthreducestozeroathighCBJreversebias
InCBconfiguration,BVCBO isdefinedat iE =0
ThebreakdownvoltageissmallerthanBVCBO foriE >0
InCEconfiguration,BVCEO isdefinedatiB =0
ThebreakdownvoltageissmallerthanBVCEO foriB >0
Typically,BVCEO isabouthalfofBVCBO
BreakdownoftheBCJisnotdestructiveaslongasthepowerdissipationiskeptwithinsafelimits
BreakdownoftheEBJisdestructivebecauseitwillcausepermanentdegradationof
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Exercise4.13(Textbook)
Exercise4.14(Textbook)
Example4.3(Textbook)
Exercise4.21(Textbook)
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4.3BJTCircuitsatDC
BJToperationmodes
TheBJToperationmodedependsonthevoltagesatEBJandBCJ
TheIVcharacteristicsarestronglynonlinear
Simplifiedmodelsandclassificationsareneededtospeedupthehandcalculationanalysis
Mode
EBJ
CBJ
Active
Forward
Reverse
Cutoff
Reverse
Reverse
Saturation
Forward
Forward
Inverse
Reverse
Forward
pnp transistor
npn transistor
vBC
InverseMode
vBE <0,vBC 0
SaturationMode
vBE 0,vBC 0
CutoffMode
vBE <0,vBC <0
ActiveMode
vBE 0,vBC 0
vCB
vBE
InverseMode
vEB <0,vCB 0
SaturationMode
vEB 0,vCB 0
CutoffMode
vEB <0,vCB <0
ActiveMode
vEB 0,vCB 0
vEB
Simplifiedmodelsandclassificationsfortheoperationofthenpn BJT
Cutoffmode:
iE =iC =iB =0
vBE <0.5VandvBC <0.4V
Activemode:
vBE =0.7VandiB :iC :iE =1: :(1+)
vCE >0.3V
Saturationmode:
vBE =0.7VandvCE =0.2V
iC/iB =forced <
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Equivalentcircuitmodels
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DCanalysisofBJTcircuits
Step1:assumetheoperationmode
Step2:usetheconditionsormodelforcircuitanalysis
Step3:verifythesolution
Step4:repeattheabovestepswithanotherassumptionifnecessary
Example4.4
=100
Example4.5
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Example4.9(Textbook)
Example4.11(Textbook)
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Exercise4.22(Textbook)
Exercise4.23(Textbook)
Exercise4.24(Textbook)
Exercise4.25(Textbook)
Exercise4.28(Textbook)
Example4.12(Textbook)
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4.4ApplyingtheBJTinAmplifierDesign
BJTvoltageamplifier
ABJTcircuitwithacollectorresistorRC canbeusedasasimplevoltageamplifier
Baseterminalisusedtheamplifierinputandthecollectorisconsideredtheamplifieroutput
Thevoltagetransfercharacteristic(VTC)isobtainedbysolvingthecircuitfromlowtohighvBE
Cutoffmode:
0V vBE <0.5VandiC =0
vO =vCE =VCC
Activemode:
vBE >0.5VandiC =ISexp(vBE/VT)
vO =VCC iCRC =VCC RCISexp(vBE/VT)
Saturation:
vBE furtherincreases
vCE =vCEsat =0.2V
vO =0.2V
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Biasingthecircuittoobtainlinearamplification
TheslopeintheVTCindicatesvoltagegain
BJTinactivemodecanbeusedasvoltageamplification
PointQ isknownasbiaspointordcoperatingpoint
IC =ISexp(VBE/VT)
ThesignaltobeamplifiedissuperimposedonVBE
vBE(t)=VBE+vbe(t)
ThetimevaryingpartinvCE(t)istheamplifiedsignal
Thecircuitcanbeusedasalinearamplifierif:
Aproperbiaspointischosenforgain
Theinputsignalissmallinamplitude
Thesmallsignalvoltagegain
TheamplifiergainistheslopeatQ:
Av
dvCE
dvBE
vBE VBE
IC
RC
VT
VoltagegaindependsonIC andRC
Maximumvoltagegainoftheamplifier
Av
IC
V VCE VCC
RC CC
| Av max |
VT
VT
VT
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DeterminingtheVTCbygraphicalanalysis
Providesmoreinsightintothecircuitoperation
Loadline:thestraightlinerepresentsineffecttheload
iC =(VCCVCE)/RC
Theoperatingpointistheintersectionpoint
LocatingthebiaspointQ
Thebiaspoint(intersection)isdeterminedbyproperlychoosingtheloadline
TheoutputvoltageisboundedbyVCC (upperbound)andVCEsat (lowerbound)
Theloadlinedeterminesthevoltagegain
Thebiaspointdeterminestheheadroomormaximumupper/lowervoltageswingoftheamplifier
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4.5SmallSignalOperationandModels
Thecollectorcurrentandthetransconductance
Thetotalquantities(ac+dc)ofthecollectorcurrent:
vBE VBE vbe
iC I S e vBE / VT ( I S eVBE / VT )e vbe / VT I C e vbe / VT
Smallsignalapproximation:vbe <<VT
v
I
iC I C ic I C 1 be I C C vbe
VT
VT
I
i
g m C iC I C C
vBE
VT
Thebasecurrentandtheinputresistanceatthebase
Thetotalquantities(ac+dc)ofthebasecurrent:
iB
IC
IS
e vBE / VT
IS
Smallsignalapproximation:
v
I
iB I B ib I B 1 be I B B vbe
VT
VT
v
VT
r be
ib
gm I B
Resistancer isthesmallsignalinputresistancebetweenbaseandemitter(lookingintothebase)
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Theemittercurrentandtheinputresistanceattheemitter
Thetotalquantities(ac+dc)oftheemittercurrent:
iE I E ie
iC
IC
ic
Smallsignalapproximation:
IC
I
vbe E vbe
VT
VT
v
1
V
re be T
ie
I E gm gm
ie
ic
gm
vbe
Relationbetweenr andre:
re
r
gm
r (1 )re
gm
OutputresistanceaccountingforEarlyeffect
UsethecollectorcurrentequationwithlinearvCE dependence:
v
iC I S e vBE / VT 1 CE
VA
1
iC
V
ro
A
v BE constant
IC
vCE
Theoutputresistancero isincludedtorepresentEarlyEffectoftheBJT
Theresultingro istypicallyalargeresistanceandcanbeneglectedtosimplifytheanalysis
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BJTsmallsignalmodels
Twomodelsareexchangeableanddoesnotaffecttheanalysisresult
Thehybrid model
Typicallyusedastheemitterisgrounded
Neglectro
TheTmodel
Typicallyusedastheemitterisnotgrounded
Neglectro
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4.6BasicBJTAmplifierConfiguration
Threebasicconfigurations
CommonEmitter(CE)
CommonBase(CB)
CommonCollector(CC)
Characterizingamplifiers
TheBJTcircuitscanbecharacterizedbyavoltageamplifiermodel(unilateralmodel)
TheelectricalpropertiesoftheamplifierisrepresentedbyRin,Ro andAvo
Theanalysisisbasedonthesmallsignalorlinearequivalentcircuit(dccomponentsnotincluded)
vo
RL
Avo
vi RL Ro
v
Rin
Rin
RL
Overallvoltagegain: Gv o
Av
Avo
vsig Rin Rsig
Rin Rsig RL Rso
Voltagegain: Av
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Thecommonemitter(CE)amplifier
CharacteristicparametersoftheCEamplifier
Inputresistance: Rin r
Outputresistance: Ro RC || ro RC
Opencircuitvoltagegain: Avo g m ( RC || ro ) g m RC
Voltagegain: Av g m ( RC || RL || ro ) g m ( RC || RL )
Overallvoltagegain: Gv
r
r
g m ( RC || RL || ro ) g m
( RC || RL )
r Rsig
r Rsig
CEamplifiercanprovidehighvoltagegain
Inputandoutputareoutofphaseduetonegativegain
LowerIC increasesRin atthecostofvoltagegain
Outputresistanceismoderatetohigh
SmallRC reducesRo atthecostofvoltagegain
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Thecommonemitter(CE)withanemitterresistance
Characteristicparameters(byneglectingro)
Inputresistance:
Rin (1 )(re Re ) r (1 ) Re
Outputresistance:
Ro RC
Opencircuitvoltagegain:
Avo
g m RC
g R
m C
1 Re / re
1 g m Re
Voltagegain:
Av
g m RC
g ( R || RL )
RL
m C
1 g m Re RL RC
1 g m Re
Overallvoltagegain:
Gv
r
g m RC
r
g m ( RC || RL )
RL
r Rsig 1 g m Re RL RC
r Rsig 1 g m Re
EmitterdegenerationresistanceRe isadopted
Inputresistanceisincreasedbyadding(1+)Re
Gainisreducedbythefactor(1+gmRe)
Theoverallgainislessdependenton
Itisconsideredanegativefeedbackoftheamplifier
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Thecommonbase(CB)amplifier
CharacteristicparametersoftheCEamplifier(byneglectingro)
Inputresistance: Rin re
Outputresistance: Ro RC
Opencircuitvoltagegain: Avo g m RC
Voltagegain: Av g m ( RC || RL )
Overallvoltagegain: Gv
re
g m ( RC || RL )
re Rsig
CEamplifiercanprovidehighvoltagegain
Inputandoutputareinphaseduetopositivegain
Inputresistanceisverylow
AsingleCBstageisnotsuitableforvoltageamplification
Outputresistanceismoderatetohigh
SmallRC reducesRo atthecostofvoltagegain
Theamplifierisnolongerunilateralifro isincluded
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Thecommoncollector(CC)amplifier
CharacteristicparametersoftheCCamplifier(byneglectingro)
Inputresistance: Rin (1 )(re RL )
Outputresistance: Ro re Rsig /
Opencircuitvoltagegain: Avo RL /( RL re ) 1
Overallvoltagegain: Gv
Rin
( 1) RL
RL
1
Rin Rsig RL re ( 1)( RL re ) Rsig
CCamplifierisalsocalledemitterfollower.
Inputresistanceisveryhigh
Outputresistanceisverylow
Thevoltagegainislessthanbutcanbecloseto1
CCamplifiercanbeusedasvoltagebuffer
Itisnotedthat,intheanalysis,theamplifierisnotunilateral
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4.7BiasinginBJTAmplifierCircuits
DCbiasforBJTamplifier
Theamplifiersareoperatingataproperdcbiaspoint
Linearsignalamplificationisprovidedbasedonsmallsignalcircuitoperation
TheDCbiascircuitistoensuretheBJTinactivemodewithapropercollectorcurrentIC
Theclassicaldiscretecircuitbiasarrangement
Asinglepowersupplyandresistorsareneeded
Thevenin equivalentcircuit:
VBB =VCCR2/(R1+R2)
RB =R1||R2
VBB VBE
BJToperatingpoint: I C
RB / RE (1 1 / )
RC ischosentoensuretheBJTinactive(VCE >VCEsat)
Atwopowersupplyversionoftheclassicalbiasarrangement
Twopowersuppliesareneeded
Similardcanalysis
VEE VBE
BJToperatingpoint: I C
RB / RE (1 1 / )
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Biasingusingacollectortobasefeedbackresistor
Asinglepowersupplyisneeded
RB ensurestheBJTinactive(VCE >VBE 0.7V)
BJToperatingpoint: I C
VCC VBE
RB / RC (1 1 / )
ThevalueofthefeedbackresistorRB affectsthesmallsignalgain
Biasingusingaconstantcurrentsource
TheBJTcanbebiasedwithaconstantcurrentsourceI
TheresistorRC ischosentooperatetheBJTinactivemode
ThecurrentsourceistypicallyimplementedbyaBJTcurrentmirror
Currentmirrorcircuit:
BothBJTtransistorsQ1 andQ2 areinactivemode
Assumecurrentgain isveryhigh:
I I REF
Whenapplyingtotheamplifiercircuit,thevoltage
V hastobehighenoughtoensureQ2 inactive
Exercise6.35(Textbook)
Exercise6.36(Textbook)
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4.8DiscreteCircuitBJTAmplifiers
Circuitanalysis:
DCanalysis:
Removeallacsources(shortforvoltagesourceandopenforcurrentsource)
Allcapacitorsareconsideredopencircuit
DCanalysisofBJTcircuitsforallnodalvoltagesandbranchcurrents
FindthedccurrentIC andmakesuretheBJTisinactivemode
ACanalysis:
Removealldcsources(shortforvoltagesourceandopenforcurrentsource)
Alllargecapacitorsareconsideredshortcircuit
ReplacetheBJTwithitssmallsignalmodelforacanalysis
ThecircuitparametersinthesmallsignalmodelareobtainedbasedonthevalueofIC
Completeamplifiercircuit
DCequivalentcircuit
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Thecommonemitter(CE)amplifier
Thecommonemitteramplifierwithanemitterresistance
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Thecommonbase(CB)amplifier
Thecommoncollector(CC)amplifier
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Theamplifierfrequencyresponse
Thegainfallsoffatlowfrequencybandduetotheeffectsofthecouplingandbypasscapacitors
ThegainfallsoffathighfrequencybandduetotheinternalcapacitiveeffectsintheBJTs
Midband:
Allcouplingandbypasscapacitors(largecapacitance)areconsideredshortcircuit
Allinternalcapacitiveeffects(smallcapacitance)areconsideredopencircuit
Midband gainisnearlyconstantandisevaluatedbysmallsignalanalysis
ThebandwidthisdefinedasBW =fH fL
AfigureofmeritfortheamplifierisitsgainbandwidthproductdefinedasGB =|AM|BW
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Exercise6.40(Textbook)
Exercise6.41(Textbook)
Exercise6.43(Textbook)
Exercise6.44(Textbook)
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