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SS9014

SS9014
Pre-Amplifier, Low Level & Low Noise
High total power dissipation. (PT=450mW)
High hFE and good linearity
Complementary to SS9015

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor


Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol
VCBO

Collector-Base Voltage

Parameter

Ratings
50

Units
V

VCEO
VEBO

Collector-Emitter Voltage

45

Emitter-Base Voltage

IC

Collector Current

100

mA

PC

Collector Power Dissipation

450

mW

TJ

Junction Temperature

150

TSTG

Storage Temperature

-55 ~ 150

Electrical Characteristics Ta=25C unless otherwise noted


Symbol
BVCBO

Parameter
Collector-Base Breakdown Voltage

Test Condition
IC =100A, IE =0

Min.
50

BVCEO

Collector-Emitter Breakdown Voltage

IC =1mA, IB =0

45

BVEBO

Emitter-Base Breakdown Voltage

IE =100A, IC =0

ICBO

Collector Cut-off Current

VCB =50V, IE =0

IEBO

Emitter Cut-off Current

VEB =5V, IC =0

hFE

DC Current Gain

VCE =5V, IC =1mA

VCE (sat)

Collector-Base Saturation Voltage

VBE (sat)

Base-Emitter Saturation Voltage

VBE (on)

Base-Emitter On Voltage

VCE =5V, IC =2mA

Cob

Output Capacitance

VCB =10V, IE =0
f=1MHz

fT

Current Gain Bandwidth Product

VCE =5V, IC =10mA

NF

Noise Figure

VCE =5V, IC =0.2mA


f=1KHz, RS=2K

60

Typ.

Max.

Units
V
V
V

50

nA

50

nA

280

1000

IC =100mA, IB =5mA

0.14

0.3

IC =100mA, IB =5mA

0.84

1.0

0.63

0.7

2.2

3.5

pF

0.58

150

270
0.9

MHz
10

dB

hFE Classification
Classification

hFE

60 ~ 150

100 ~ 300

200 ~ 600

400 ~ 1000

2002 Fairchild Semiconductor Corporation

Rev. A3, May 2002

SS9014

Typical Characteristics
100

1000

VCE = 5V

IB = 160A
IB = 140A
IB = 120A

80
70

hFE, DC CURRENT GAIN

IC [mA], COLLECTOR CURRENT

90

IB = 100A

60

IB = 80A

50

IB = 60A

40

IB = 40A

30
20

IB = 20A

100

10
0

10

10

20

30

40

50

10

VCE [V], COLLECTOR-EMITTER VOLTAGE

VBE (sat)

100

VCE (sat)

IC = 20 IB
10
100

IC [mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage

2002 Fairchild Semiconductor Corporation

1000

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE

Figure 2. DC current Gain

1000

10

1000

IC [mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

100

1000

VCE = 5V

100

10
1

10

100

1000

IC [mA], COLLECTOR CURRENT

Figure 4. Current Gain Bandwidth Product

Rev. A3, May 2002

SS9014

Package Demensions

TO-92
+0.25

4.58 0.20

4.58 0.15

0.10

14.47 0.40

0.46

1.27TYP
[1.27 0.20]

1.27TYP
[1.27 0.20]
0.20

(0.25)

+0.10

0.38 0.05

1.02 0.10

3.86MAX

3.60

+0.10

0.38 0.05

(R2.29)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. A3, May 2002

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOS
EnSigna
FACT
FACT Quiet Series

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
ISOPLANAR
LittleFET
MicroFET
MicroPak

MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series

SLIENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation

UHC
UltraFET
VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation

Rev. H5

This datasheet has been downloaded from:


www.DatasheetCatalog.com
Datasheets for electronic components.

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