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SS9014 PDF
SS9014 PDF
SS9014
Pre-Amplifier, Low Level & Low Noise
High total power dissipation. (PT=450mW)
High hFE and good linearity
Complementary to SS9015
TO-92
Collector-Base Voltage
Parameter
Ratings
50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
45
Emitter-Base Voltage
IC
Collector Current
100
mA
PC
450
mW
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 ~ 150
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC =100A, IE =0
Min.
50
BVCEO
IC =1mA, IB =0
45
BVEBO
IE =100A, IC =0
ICBO
VCB =50V, IE =0
IEBO
VEB =5V, IC =0
hFE
DC Current Gain
VCE (sat)
VBE (sat)
VBE (on)
Base-Emitter On Voltage
Cob
Output Capacitance
VCB =10V, IE =0
f=1MHz
fT
NF
Noise Figure
60
Typ.
Max.
Units
V
V
V
50
nA
50
nA
280
1000
IC =100mA, IB =5mA
0.14
0.3
IC =100mA, IB =5mA
0.84
1.0
0.63
0.7
2.2
3.5
pF
0.58
150
270
0.9
MHz
10
dB
hFE Classification
Classification
hFE
60 ~ 150
100 ~ 300
200 ~ 600
400 ~ 1000
SS9014
Typical Characteristics
100
1000
VCE = 5V
IB = 160A
IB = 140A
IB = 120A
80
70
90
IB = 100A
60
IB = 80A
50
IB = 60A
40
IB = 40A
30
20
IB = 20A
100
10
0
10
10
20
30
40
50
10
VBE (sat)
100
VCE (sat)
IC = 20 IB
10
100
1000
1000
10
1000
100
1000
VCE = 5V
100
10
1
10
100
1000
SS9014
Package Demensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H5