N AND P CHANNEL LATERALMOSFETS HIGH POWER 125W EC-10P 16/20 | HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS T03 sees TosP/To247 24 l,l L All ABSOLUTE MAXIMUM RATING (T case = 25°C unless otherwise stated) {EC-10)16 | (EC-10)20 Vosx Drain - Source Voltage 160V | 200V Vass Gate - Source Voltage any lp Continuous Drain Current 8A Ipipx) Body Drain Diode 8A Pp ‘Total Power Dissipation @ (T cas 125W Tstg Storage Temperature Range 55 to 150°C i Maximum Operating Junction Temperature aus) RAC ‘Thermal Resistance Junction - case 1.0cIW | Characteristic ‘Source Breakdown Voltage Voltage Drain - Source Cut - OM Current ‘psx | tecmen We ead rar Aarne ay wes Vas = -10V 10 = 10ma DYNAMIC CHARACTERISTICS (T case = 25°C unless otherwise stated) Test Conditions N-Channel__P-Channel | UNIT Input Capacitance 500] | Sree | vos- 10V Output Capacitance | $00 PF sa fern fetttaertieerp Reverse Transfer Capacitance [0 oe | ss ton Turn-on Time | vbs= 20v 100 120 {ons ott Turn-off Time IDs 5A 50 oo *Pulge Test: Pulse width 300u8, Duty Cycle 22% Telephone: U.K. ++44 (0)1702 543500 Fax +444 (0)1702 543700EC-10P16/20 N_AND P CHANNEL LATERAL MOSFETS HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS Typical Characteristics for 125W Devices. Power vs. Temperature Derating Maximum Safe Operating Area Pe - wy | 125 to PK) 2] so | ¢ 2 2 & e] 4) UU 2| 1s BS F 6 5 3 sf “OTM El é é SJost LH 2 —+] 0 25 5075100125 150 Case Temperature Te (°C) Typical Output (N-Channel) Drain - Source Vokage - VOS. Typical Output (P-Channel) 10, ; \ 10 z || 2 2 2 t g 5 E 8 8 é é & é ° 10 ©2090 50 Drain- Source Vokage - VDS Drain-Source Votage - VOS EXICON = Telephone: U.K. ++44 (0)1702 543500 Fax: ++44 (0)1702 543700 3N_AND P CHANNEL LATERALMOSFETS EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS Typical Characteristics for 125W Devices (cont.) Typical Transfer Characteristics (N-Channel) Typical Transfer Characteristics (P-Channel) a _|Te=25°C) 8 Vos =10V ‘Vos = 10 z Tee 18°C: = a “esioorc Q e z| é i 8 3 5 or o8 8 Drain - Source Voltage - VGS Drain - Source Voltage - VGS Forward Transfer Admittance (N-Channel) Forward Transfer Admittance (P-Channel) tom - 10. es | Vee = 20} cs} fp os = 20} ‘) a° 2° gi | 8 8 5 5 i : i 8 8 0 "10 20 30 40 50 60 70 040 20 30 40 50 60 70 Drain Curent ID (A) Drain Current 10 (A) Telephone: U.K. +444 (0)1702 543500 Fax: +444 (0)1702 543700 EXICON