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2SD2017
B
Darlington ( 4k Ω) E
Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 300 V ICBO VCB=300V 100max µA
VCEO 250 V IEBO VEB=20V 10max mA
8.4±0.2
16.9±0.3
VEBO 20 V V(BR)CEO IC=25mA 250min V
ø3.3±0.2
IC 6 hFE 2000min a
A VCE=2V, IC=2A
0.8±0.2
b
IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max V
PC 35(Tc=25°C) VBE(sat) IC=2A, IB=2mA 2.0max V
±0.2
3.9
W
13.0min
Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 65typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
100 50 2 10 –5 5 –10 0.6typ 16.0typ 3.0typ b. Lot No.
A m A
4 0m 20
8m
A
5 A 5
4m
4 2 4
1mA
3 3
p)
mp)
)
Tem
Temp
I C =8A
e Te
mA
I B = 0 .4
se
2 1 2
(Case
(Ca
(Cas
I C =3A
I C =1A
˚C
25˚C
–30˚C
125
1 1
0 0 0
0 1 2 3 4 5 6 0.2 0.5 1 5 10 50 100 500 1000 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =2V) (V C E =2V)
10000 10000 5
5000 5000 ˚C
Typ 125
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E
˚C
25
1000
1000 0˚C
–3
500 500
1
5 D. s in mm
C
Cut- off F req uency f T ( MH Z )
(T
Collector Curr ent I C (A)
C=
20 25
C)
W
ith
1 20
In
fin
ite
0.5
he
150x150x2
at
si
10
nk
100x100x2
10
0.1
Without Heatsink 50x50x2
0.05 Natural Cooling
Without Heatsink
2
0 0.02 0
–0.02 –0.05 –0.1 –0.5 –1 –5 –6 3 5 10 50 100 300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
143