2SA1908

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –120 V ICBO VCB=–120V –10max µA 3.45 ±0.2

µA

5.5
IEBO VEB=–6V –10max

9.5±0.2
VCEO –120 V
VEBO –6 V V(BR)CEO IC=–50mA –120min V

23.0±0.3
50min∗
ø3.3±0.2
IC –8 A hFE VCE=–4V, IC=–3A a

1.6
IB –3 A VCE(sat) IC=–3A, IB=–0.3A –0.5max V b

3.0
PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz

3.3
Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–8 –3 –8
A
Collector-Emitter Saturation Voltage V C E (s at) (V )

A
A

m m
m

00 50
–1
50

–2 mA
–3

–100

Collector Current I C (A)

–6 –7 5m A –6
Collector Current I C (A)

–2
–50mA

–4 –4

mp)

mp)
mp)
–25mA

e Te

e Te
e Te
–1

Cas

(Cas
(Cas
–2 –2

˚C (
I C =–8A
I B =–10mA

–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C/W)

(V C E =–4V) (V C E =–4V)
200 300 4

125˚C
Typ
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

25˚C
100 100
1
–30˚C

0.5
50 50

30 30 0.2
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 80

–10 10
m
Ma xim um Powe r Dissipat io n P C (W)

10 s
0m
Typ s
Cut-o ff Fr eque ncy f T ( MH Z )

–5 DC 60
W
Collector Curr ent I C (A)

ith

20
In
fin
ite
he

40
at
si

–1
nk

10
–0.5
Without Heatsink 20
Natural Cooling

Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 8 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

36