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2SD2439
B
Darlington (7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SD2439 Unit Symbol Conditions 2SD2439 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 160 V ICBO VCB=160V 100max µA 3.45 ±0.2
5.5
9.5±0.2
VEBO 5 V V(BR)CEO IC=30mA 150min V
23.0±0.3
IC 10 A hFE VCE=4V, IC=7A 5000min∗ ø3.3±0.2
a
IB 1 VCE(sat) IC=7A, IB=7mA 2.5max V
1.6
A b
3.0
PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max V
3.3
Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 2.15
+0.2
1.05 -0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.65 +0.2
5.45±0.1 5.45±0.1 -0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ
B C E b. Lot No.
10 3 10
A
A
10 m A
2m 1. 5m A
5m
2.
8 1.2 mA 8
1m A
2
6 6
0.8mA
I C =10A
I C =7A
p)
mp)
mp)
4 0.6mA 4
Tem
I C =5A
e Te
e Te
1
se
(Cas
(Cas
(Ca
I B =0.4mA
˚C
2 2
25˚C
–30˚C
125
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
40000 70000 3
50000
125˚C
DC Curr ent Gain h FE
Typ
Transient Thermal Resistance
1
10000 10000 25˚C
5000 0.5
5000 –30˚C
1000
10
m
s
Ma xim um Powe r Dissipation P C ( W)
10
80 10
DC 0m
Cut- off Fr equ ency f T (MH Z )
60
5
ith
s
Collecto r Cur ren t I C (A)
In
fin
Typ
60
ite
he
40
at
1
si
nk
40
0.5
Without Heatsink 20
20 Natural Cooling
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
152
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