LAPT 2SA1295

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application : Audio and General

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SA1295 Unit Symbol Conditions 2SA1295 Unit
µA 36.4±0.3 6.0±0.2
VCBO –230 V ICBO VCB=–230V –100max
24.4±0.2
VCEO –230 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9
2.1

VEBO –5 V V(BR)CEO IC=–25mA –230min V

7
IC A hFE VCE=–4V, IC=–5A 50min∗

21.4±0.3
–17 a
IB –5 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b
PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz
2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF
3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter)

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

–17 – 3 –17
0A A
A

. .5 A
–1
.0

–2 – 1.0
–3

–15 –15

0 mA
–50

Collector Current I C (A)

Collector Current I C (A)

0mA
–30 –2
–10 mA –10
–200

p)

mp)
em
–1 00 mA

eT

e Te
–1

Cas
–5 I C =–10A –5

Cas
–50mA
˚C (

˚C (
125
25˚C

–30
I B =–20mA –5A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –0.8 –1.6 –2.4 –3.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
200 200 2
125˚C
DC Cur rent Gain h FE
DC Cur rent Gain h F E

Transient Thermal Resistance

100 Typ 100 25˚C 1

50 50 –30˚C 0.5

10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –40 200

10
m
s
M aximum Power Dissipa ti on P C (W)

–10 D 160
C
Cu t-of f Fr eque ncy f T ( MH Z )

–5
ith
Collect or Cur ren t I C (A)

40
In

p
fin

Ty 120
ite
he
at

–1
si
nk

–0.5 80
20
Without Heatsink
Natural Cooling
40
–0.1

Without Heatsink
5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

16