t U na.

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SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

2N5770

TO-92

NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to X mA range.
Sourced from Process 43.

Absolute Maximum Ratings* TA= 25 cumess otherwise noted

Parameter Value Units
Symbol
V
VCEO V
Vceo
Collector-Base Voltage 30
V
Emitter-Base Voltage 4.5
mA
Ic
Collector Current - Continuous 50
"C
Operating and Storage J unction Temperature Range -55 to +150

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NQIES:
1) These ratings are based on a maximum junction temperature of 150 degrees C
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25 c umess otherwise noted

Units
Symbol Characteristic Max
2N5770
mW
PD mW/'C
Derate above 25°C 2.8
"CM/
Thermal Resistance, J unction to Case 1 25
Thermal Resistance, Junction to Ambient 357
RHJA

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
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 Electrical Characteristics TA = 25 C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
VJBRICEO Collector-Emitter Breakdown Voltage* lc = 3.0mA, IB = 0 15 V
V(BR)C8O Collector-Base Breakdown Voltage lc=1.0uA,lE = 0 30 V
yewfflo Emitter-Base Breakdown Voltage l E =10nA,l c = 0 4.5 V
ICBO Collector Cutoff Current V CB =15V, IE = 0 10 nA
V CB =15V, IE = 0, T A =150'C 1.0 jiA
IEBO Emitter Cutoff Current VEB=3.0V, lc = 0 10 MA
V EB =20V, lc = 0 1.0 MA

ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0V, lc = 3.0mA 20
VCE = 10V, lc = 8.0mA 50 200
VcE(sat) Collector-Emitter Saturation Voltage lc= 10 mA, IB = 1.0mA 0.4 V
VeE(sat) Base-Emitter Saturation Voltage Ic = 10mA, IB = 1.0mA 1.0 V

SMALL SIGNAL CHARACTERISTICS

NF Noise Rgure lc=1.0mA,VcE = 8.0V, 6.0 dB
f = 60MHz, Rg = 400ii
COB Collector-Base Capacitance VCB = 10V, IE = 0, f = 1.0 MHz 0.7 1.1 PF
Ob Input Capacitance VEB = 0.5V 2.0 PF
hfe Small-Signal Current Gain lc = 8.0mA,VcE = 10V,
f = 100 MHz 9.0 18
lc = 8.0mA,Vc E =10V,
f = 1.0 kHz 40 240
rb'Cc Collector-Base Time Constant lE = 8.0mA,V C B= 10V, 3.0 20 PS
f = 79.8 MHz

FUNCTIONAL TEST
Gpe Amplifier Power Gain lc = 6.0mA,VCB = 12V, 15 dB
f = 200 MHz
Po Power Output Vcc = 15 V, lc = 8.0mA, 30 mW
11 Collector Efficiency f = 500 MHz 25 %

Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%

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