i, Una.

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SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

NPN Silicon RF Transistors BF254

BF255
For AM and FM stages

Type Marking Pin Configuralton Package1)

1 2 3
BF254 — C E B TO-92
BF255

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 20 V
Collector-base voltage VCES 30
Emitter-base voltage VEBO 5
Collector current 7c 30 mA
Total power dissipation, TA s 45 'C PM 250 mW
Junction temperature Ti 150 'C
Storage temperature range r«o -65, .. + 150

Thermal Resistance
Junction - ambient 5420 K/W

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice infomation famished by N; Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
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 BF254
BF255

Electrical Characteristics
at TA = 25 'C, unless otherwise specified.
Parameter Symbol Values Unit
mln. typ. max.

DC Characteristics
_
DC current gain Are
/c = 1 mA, VCE - 10 V
BF254 65 — 220
BF255 35 - 130
Base-emitter voltage VBE — 0.68 — V

AC Characteristics
Transition frequency ft MHz
/c . 1 mA, VCE « 10 V, /= 100 MHz
BF254 - 260 -
BF255 220
Collector-base capacitance Cob — 0.6 — PF
VCB - 10 V, VBE = 0 V,/= 1 MHz
Collector-emitter capacitance Co — 0.6 —
Vets = 10 V, VBE = 0 V,/= 1 MHz
Noise figure F dB
/c = 1 mA, Vce = 10 V
/=1 MHz,£.= 1.5mSi> - 1.2 -
/=100MHz,s.= 10mSi> 3.8

Y parameters, typical values, /c = 10 V

/ *» ftii Iy 1 3 | <p<2 \y»\S <p* *a ba
MHz mS mS us deg. deg. us us
Common emitter
0.45 8F 254 0.3 0.06 1.7 -90 38 0 3.2 3.4
BF255 0.45 0.08 1.7 -90 38 0 2.7 3.4
10.7 BF254 0.4 1.5 41 -90 37 -10 4 8.1
BF255 0.5 1.75 41 -90 37 -10 3.8 8.1
Common base
100 BF255 34 -3.5 250 -85 33 150 18 700
') gt = generator conductance

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