(Inc orpora ted in Bermud a with limited liab ility)

三极管规格书
SPECIFICATIONS
品名 三极管 型号 8050
TYPE OF SWITCH MODEL NO
一 构造 CONSTRUCTION
形状，寸法，依照图面规定
SHAPE AND DIMENSIONS SUBJECT TO ATTACHED CHART REGULATION
外 观 各部应良好无锈蚀，裂痕，电镀不良现象
APPEARANCE：EVRY PART SHOULD BE FINISHED NOT TO EXIST RUST
FLAW CRACK AND BAD PLATIONG
Package TO-92 TYP NPN
二 电气性能
ELECTRICAL CHARACTERISTICS TESTCONDITION
1：ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC 1.5 A
Base Current IB 0.5 A
Collector Dissipation PC 1.0 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65~+150 °C
2:ELECTRICAL CHARACTERISTICS (Ta= 25℃)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector- Base Breakdown Voltage BVCBO 40 - - V IC=100uA IE=0
Collector-Emitter Breakdown Voltage BVCEO 25 - - V IC=2mA IB=0
Emitter-Base Breakdown Voltage BVEBO 6.0 - - V IE=0.1mA IC=0
Collector Cutoff Current ICBO - - 100 nA VCB=35V, IE=0
Emitter Cutoff Current IEBO - - 100 nA VEB=6V, IC=0
DC Current Gain hFE1 45 - VCE=1.0V, IC=5.0mA
HFE2 85 300 VCE=1.0V, IC=100mA
HFE3 40 VCE=1.0V, IC=800mA
Collector-Emitter Saturation Voltage VCE(sat) - 0.28 0.5 V IC=800mA,IB=80mA
Base-Emitter Saturation Voltage VBE(sat) - 0.98 1.2 V IC=800mA,IB=80mA
Base-Emitter On Voltage VBE 0.66 1.0 V VCE=1.0V, IC=10mA
fT 100 190 MHz VCE=10V, IC=50mA
Cob 9.0 pF VCB=10V, IE=0 1MHz
3:Classification on HFE1
RANK B C D
RANGE 85-160 120-200 160-300
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