2SC3858

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit
36.4±0.3 6.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA 24.4±0.2 2.1
VCEO 200 V IEBO VEB=6V 100max µA 2-ø3.2±0.1 9

VEBO 6 V V(BR)CEO IC=50mA 200min V

7
21.4±0.3
IC 17 A hFE VCE=4V, IC=8A 50min∗ a

V b
IB 5 A VCE(sat) IC=10A, IB=1A 2.5max
PC 200(Tc=25°C) W fT VCE=12V, IE=–1A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 3
0.65 +0.2
∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
-0.1
Tstg 1.05 +0.2
–55 to +150 °C -0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
17 3 17
Collector-Emitter Saturation Voltage V CE(s a t) (V )

A
1A m m A
5A

7 00 500
1.

15 15
A
300m

Collector Current I C (A)

Collector Current I C (A)

20 0m A 2

10 10

100mA

p)

)
Tem

Temp
1

se
5 50mA 5

(Case
(Ca
˚C
I C =15A
125

–30˚C
25˚C
I B =20mA 10A
5A

0 0 0
0 1 2 3 4 0 1 2 3 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
300 200 2
125˚C
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

100 1
100 Typ 25˚C

50 –30˚C 0.5

50

20 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 50 200
3
20 10 ms
m m
s s
Typ
Ma xim um Powe r Dissipat io n P C (W)

D 160
10

C
0m
Cut-o ff Fr equ ency f T (M H Z )

10
W
s

ith
Collector Cu rre nt I C (A)

20
In

5
fin

120
ite
he
at
si
nk

1 80
10
0.5 Without Heatsink
Natural Cooling 40

Without Heatsink
5
0 0.1
2 10 100 300 0
–0.02 –0.1 –1 –10 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

80