LOW VCE (sat) 2SA1746

Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, Switch and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SA1746 Unit Symbol Conditions 2SA1746 Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –70 V ICBO VCB=–70V –10max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO –50 V IEBO VEB=–6V –10max
VEBO –6 V V(BR)CEO IC=–25mA –50min V

23.0±0.3
ø3.3±0.2
IC –12(Pulse–20) A hFE VCE=–1V, IC=–5A 50min a

1.6
IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max V b

3.0
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max V

3.3
Tj 150 °C fT VCE=–12V, IE=1A 25typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 400typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–20 4 –5 –10 5 –80 80 0.5typ 0.6typ 0.3typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–1V)
–12
Collector-Emitter Saturation Voltage V C E (s a t) (V )

–12 –12mA –1.5

–100 mA

–10 –10
–70mA

Collector Current I C (A)

Collector Current I C (A)

–8 –1.0 –8
–50mA

p)

)
em

emp
–6 –6

mp)
seT
–30m A

seT
(Ca

eTe
(Ca
–4 –0.5 –4

(Cas
˚C

25˚C
125
I C =–10A

–30˚C
I B =–10mA
–2 –5A –2
–3A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –3 –10 –100 –1000 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =–1V) (V C E =–1V)
500 500 4

125˚C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

Typ
25˚C

1
–30˚C

100 100 0.5

50 50 0.2
–0.03 –0.1 –0.5 –1 –5 –10 –0.03 –0.1 –0.5 –1 –5 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
40 –30 60
10
0µ
1m

Maxim um Power Dissip ation P C (W)

s
10

s
m
s

–10
Cu t-of f Fr eque ncy f T (MH Z )

30
Collector Curre nt I C (A)

Typ 40
W

–5
ith
In
fin

20
ite
he
at
si

20
nk

10 –1
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.3 0
0.1 1 10 –3 –10 –50 –100 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

32