2SC5287

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0

1.8
VCBO 900 V ICBO VCB=800V 100max µA 9.6 2.0±0.1

VCEO 550 V IEBO VEB=7V 100max µA

19.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 550min V

4.0
a ø3.2±0.1
IC 5(Pulse10) A hFE VCE=4V, IC=1.8A 10 to 25
b
IB 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max V
PC 80(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.35A 6typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
250 139 1.8 10 –5 0.27 –0.9 0.7max 4.0max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(V C E =4V)
5 1.5 7
Collector-Emitter Saturation Voltage V C E (s at ) (V )

0 mA 600mA I C /I B =5 Const.
70
Base-Emitter Saturation Voltage V B E (s at) (V)

6
400 mA
4

Collector Current I C (A)

Collector Current I C (A)

5
250 mA 1.0
3
4
V B E (sat)
150 mA
3
2
0.5
2
I B =50mA
1
1
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 7 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V)
40 6 3
125˚C 5
t on • t st g• t f (µ s)

25˚C
DC Cur rent Gain h F E

Transient Thermal Resistance

V C C 250V t s tg
I C :I B1 :I B2 =1:0.15:–0.5

–55˚C 1
1
Swi tchi ng T im e

tf
10 0.5

t on 0.5

5
4 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 80

10 50 10
10 µs
Ma xim um Powe r Dissipat io n P C (W)

0µ
5 s 5
60
W
ith
Co lle ctor Cu rre nt I C (A)
Co lle ctor Cu rre nt I C (A)

In
fin
ite

1 1
he

40
at
si
nk

0.5 0.5
Without Heatsink
Natural Cooling
Without Heatsink IB2=–1.0A
Natural Cooling L=3mH 20
0.1 0.1 Duty:less than 1%

0.05 0.05 Without Heatsink

3.5
0.03 0.03 0
10 50 100 500 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

133