Professional Documents
Culture Documents
www.DataSheet4U.com
Darlington 2SB1351 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SB1351 Unit Symbol Condition 2SB1351 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO –60 V ICBO VCB=–60V –10max µA
VCEO –60 V IEBO VEB=–6V –10max mA
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –60min V
ø3.3±0.2
IC –12(Pulse–20) hFE VCE=–4V, IC=–10A 2000min a
A
0.8±0.2
b
IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max V
PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz 1.35±0.15
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–40 4 –10 –10 5 –20 20 0.7typ 1.5typ 0.6typ b. Lot No.
–20 –3 –20
A
–6m
A
0m
–4 m A
–1
–3 mA
–2m A –2
–10 –10
)
emp
)
emp
I B =–1mA I C =–10A
mp)
eT
se T
e Te
Cas
–1 –5A
(Ca
–1A
˚C (
(Cas
–5 –5
25˚C
125
–30˚C
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
20000 20000 5
C
10000 5˚
DC Cur rent Gain h FE
10000 Typ 12
˚C
5000 25
5000 ˚C
–30
1
1000 0.5
1000
800 500 0.3
–0.3 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –20 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Natural Cooling
Silicone Grease
Ma ximum Po we r Dissipatio n P C (W)
1m
200 –10
Heatsink: Aluminum
10
s
m
Cut-o ff F requ ency f T (MH Z )
DC in mm
s
–5
Collecto r Cur ren t I C (A)
160 20
W
Typ
ith
In
fin
120 150x150x2
ite
–1
he
100x100x2
at
–0.5
si
80 10
nk
Without Heatsink
Natural Cooling 50x50x2
40
–0.1 Without Heatsink
2
0 –0.05 0
0.05 0.1 0.5 1 5 10 20 –2 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
41