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  • Igbt

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    Ali Bakhshi
    9 views8 pages
    The document discusses IGBT (Insulated Gate Bipolar Transistor), a type of power semiconductor device. IGBTs have the ability to operate at high voltages and currents with low conduction losses. They are used in applications ranging from low to medium power of a few megawatts and even tens of megawatts. IGBTs combine characteristics of MOSFETs, BJTs and GTOs - having high gate impedance, low switching losses, low conduction losses, high breakdown voltage and ability to block negative voltages.

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    igbt transistors

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    igbt

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    The document discusses IGBT (Insulated Gate Bipolar Transistor), a type of power semiconductor device. IGBTs have the ability to operate at high voltages and currents with low conduction losses. They are used in applications ranging from low to medium power of a few megawatts and even tens of megawatts. IGBTs combine characteristics of MOSFETs, BJTs and GTOs - having high gate impedance, low switching losses, low conduction losses, high breakdown voltage and ability to block negative voltages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    9 views8 pages

    Igbt

    Uploaded by

    Ali Bakhshi
    The document discusses IGBT (Insulated Gate Bipolar Transistor), a type of power semiconductor device. IGBTs have the ability to operate at high voltages and currents with low conduction losses. They are used in applications ranging from low to medium power of a few megawatts and even tens of megawatts. IGBTs combine characteristics of MOSFETs, BJTs and GTOs - having high gate impedance, low switching losses, low conduction losses, high breakdown voltage and ability to block negative voltages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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