BYV27-50, BYV27-100, BYV27-150, BYV27-200

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Vishay Semiconductors

Ultra-Fast Avalanche Sinterglass Diode

FEATURES
Controlled avalanche characteristic
Low forward voltage
Ultra fast recovery time
Glass passivated junction
Hermetically sealed package
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912

949539

MECHANICAL DATA
Case: SOD-57

APPLICATIONS

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

Very fast rectification diode e.g. for switch mode power

supply

Polarity: color band denotes cathode end

Mounting position: any
Weight: approx. 369 mg

ORDERING INFORMATION (Example)

DEVICE NAME
BYV27-200
BYV27-200

ORDERING CODE

TAPED UNITS

MINIMUM ORDER QUANTITY

BYV27-200-TR
BYV27-200-TAP

5000 per 10" tape and reel

5000 per ammopack

25 000
25 000

TYPE DIFFERENTIATION

PACKAGE

VR = 50 V; IF(AV) = 2 A
VR = 100 V; IF(AV) = 2 A
VR = 150 V; IF(AV) = 2 A
VR = 200 V; IF(AV) = 2 A

SOD-57
SOD-57
SOD-57
SOD-57

PARTS TABLE
PART
BYV27-50
BYV27-100
BYV27-150
BYV27-200

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

Peak reverse voltage, non repetitive

See electrical characteristics

Reverse voltage = repetitive peak reverse

voltage

See electrical characteristics

Peak forward surge current

Repetitive peak forward current
Average forward current
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
Junction and storage temperature range

PART

SYMBOL

VALUE

UNIT

BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-50
BYV27-100
BYV27-150
BYV27-200

VRSM
VRSM
VRSM
VRSM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)

55
110
165
220
50
100
150
200
50
15
2

V
V
V
V
V
V
V
V
A
A
A

ER

20

mJ

Tj = Tstg

- 55 to + 175

tp = 10 ms, half sine wave

I(BR)R = 1 A, Tj = 175 C

MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified)

PARAMETER
Junction ambient

Rev. 1.8, 04-Sep-12

TEST CONDITION

SYMBOL

VALUE

UNIT

l = 10 mm, TL = constant
On PC board with spacing 25 mm

RthJA
RthJA

45
100

K/W
K/W

Document Number: 86042

1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYV27-50, BYV27-100, BYV27-150, BYV27-200

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Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

Forward voltage

SYMBOL

MIN.

TYP.

MAX.

UNIT

IF = 3 A

VF

1.07

IF = 3 A, Tj = 175 C

VF

0.88

VR = VRRM

IR

VRSM

IR

100

VR = VRRM, Tj = 165 C

IR

150

IF = 0.5 A, IR = 1 A, iR = 0.25 A

trr

25

ns

Reverse current
Reverse recovery time

PART

120

2.5
l

IFAV - Average Forward Current (A)

RthJA - Therm.Resist.Junction/Ambient (K/W)

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

100
80
TL = constant

60
40
20

VR = VRRM
half sine wave
RthJA = 45 K/W
l = 10 mm

2.0

1.5

1.0

0.5
RthJA = 100 K/W
PCB: d = 25 mm

0.0
0

10

15

20

25

30

l - Lead Length (mm)

949526

Fig. 1 - Typ. Thermal Resistance vs. Lead Length

20

40

60

80

100 120 140 160 180

Tamb - Ambient Temperature (C)

16383

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

1000

100

IR - Reverse Current (A)

IF - Forward Current (A)

VR = VRRM
10
Tj = 175 C
Tj = 25 C

0.1

0.01

0.001
0.0
16382

10

1
0.5

1.0

1.5

2.0

25

2.5

VF - Forward Voltage (V)

Fig. 2 - Forward Current vs. Forward Voltage

Rev. 1.8, 04-Sep-12

100

16384

50

75

100

125

150

175

Tj - Junction Temperature (C)

Fig. 4 - Reverse Current vs. Junction Temperature

Document Number: 86042

2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYV27-50, BYV27-100, BYV27-150, BYV27-200

Vishay Semiconductors

100

70
VR = VRRM

f = 1 MHz

CD - Diode Capacitance (pF)

PR - Reverse Power Dissipation (mW)

www.vishay.com

60
50
40

PR - Limit
at 100 % VR

30
PR - Limit
at 80 % VR

20
10

80

60

40

20

0
25

50

75

100

125

150

0.1

175

Tj - Junction Temperature (C)

16385

16386

Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature

10

100

VR - Reverse Voltage (V)

Fig. 6 - Diode Capacitance vs. Reverse Voltage

3.6 (0.142) max.

0.82 (0.032) max.

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

26 (1.024) min.

4 (0.157) max.

26 (1.024) min.

20543

Rev. 1.8, 04-Sep-12

Document Number: 86042

3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 13-Jun-16

Document Number: 91000