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Vishay Semiconductors
6 B
5 C
NC
4 E
21842
APPLICATIONS
i179004-5
AC mains detection
Reed relay driving
DESCRIPTION
AGENCY APPROVALS
UL1577, file no. E52744
BSI: EN 60065:2002, EN 60950:2000
FIMKO: EN 60950, EN 60065, EN 60335
ORDER INFORMATION
PART
REMARKS
4N25
4N26
4N27
4N28
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
V
mA
INPUT
Reverse voltage
Forward current
IF
60
IFSM
Pdiss
100
mW
VCEO
70
VEBO
t 10 s
Surge current
Power dissipation
OUTPUT
Collector current
Power dissipation
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132
t 1 ms
IC
50
mA
IC
100
mA
Pdiss
150
mW
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VISO
COUPLER
Isolation test voltage
5000
VRMS
Creepage distance
mm
Clearance distance
mm
0.4
mm
175
RIO
1012
RIO
1011
Storage temperature
Tstg
- 55 to + 125
Operating temperature
Tamb
- 55 to + 100
Junction temperature
Tj
125
Tsld
260
Isolation resistance
Notes
(1) T
amb = 25 C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (2)
IF = 50 mA
VF
1.3
1.5
VR = 3 V
IR
0.1
100
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector base breakdown voltage (2)
IC = 100 A
BVCBO
70
IC = 1 mA
BVCEO
30
IE = 100 A
BVECO
ICEO(dark) (2)
4N25
50
nA
4N26
50
nA
4N27
50
nA
4N28
10
100
nA
20
nA
VCB = 10 V,
(emitter open)
ICBO(dark) (2)
Collector emitter capacitance
VCE = 0
CCE
pF
COUPLER
Isolation test voltage (2)
Peak, 60 Hz
VIO
ICE = 2 mA, IF = 50 mA
VCE(sat)
VIO = 500 V
RIO
f = 1 MHz
CIO
5000
V
0.5
100
V
G
0.6
pF
Notes
(1) T
amb = 25 C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
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133
(1)
TEST CONDITION
VCE = 10 V, IF = 10 mA
PART
SYMBOL
MIN.
TYP.
4N25
CTRDC
20
50
MAX.
UNIT
%
4N26
CTRDC
20
50
4N27
CTRDC
10
30
4N28
CTRDC
10
30
Note
(1) Indicates JEDEC registered values.
SWITCHING CHARACTERISTICS
PARAMETER
Rise and fall times
TEST CONDITION
SYMBOL
tr, tf
MIN.
TYP.
MAX.
UNIT
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
1.5
1.3
TA = - 55 C
1.2
TA = 25 C
1.1
1.0
0.9
TA = 85 C
0.8
0.7
0.1
10
100
i4n25_01
1.0
TA = 50 C
0.5
NCTR(SAT)
NCTR
0.1
1.0
TA = 25 C
0.5
NCTR(SAT)
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) VCE = 0.4 V
1.0
TA = 70 C
0.5
NCTR(SAT)
NCTR
NCTR
0.0
i4n25_02
10
100
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134
100
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) = 0.4 V
10
i4n25_03
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) VCE = 0.4 V
0.0
1.4
0.0
0.1
i4n25_04
10
100
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) VCE = 0.4 V
1.5
1.0
TA = 85 C
0.5
NCTR(SAT)
NCTR
1
10
100
i4n25_05
25 C
50 C
70 C
1
10
100
35
10
30
25
50 C
20
70 C
15
85 C
25 C
10
5
Normalized Photocurrent
0.5
i4n25_08
10
20
30
40
50
60
i4n25_06
Normalized to:
IF = 10 mA, TA = 25 C
1
0.1
Nib, TA = - 20 C
Nib, TA = 20 C
Nib, TA = 50 C
Nib, TA = 70 C
0.01
0.1
i4n25_09
10
100
105
1.2
70 C
104
1.0
0.0
0.1
0.0
0.1
Normalized to:
VCB = 9.3 V, IF = 10 mA, TA = 25 C
103
10
VCE = 10 V
101
Typical
100
10- 1
10- 2
- 20
i4n25_07
1.0
25 C
- 20 C
0.8
Normalized to:
IB = 20 A, VCE = 10 V,
TA = 25 C
0.6
0.4
0
20
40
60
80
100
1
i4n25_10
10
100
1000
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135
1.5
VCC = 5 V
Normalized to:
VCE = 10 V, Ib = 20 A
TA = 25 C
70 C 50 C
f = 10 kHz
DF = 50 %
1.0
25 C
VO
- 20 C
0.5
IF = 10 mA
VCE = 0.4 V
0.0
1
10
100
1000
i4n25_14
i4n25_11
tPHL
2.0
100
1.5
10
tPLH
1
0.1
IF = 10 mA, TA = 25 C
VCC = 5.0 V, Vth = 1.5 V
i4n25_12
2.5
1000
RL
1.0
100
10
IF
tD
VO
tR
tPLH
VTH = 1.5 V
tPHL
tS
tF
i4n25_13
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136
3.5 0.3
6.5 0.3
1.2 0.1
14771_2
2 3
4.5 0.3
0.5 0.1
2.8 0.15
4.5 0.3
0.25
7.62 to 9.5 typ.
PACKAGE MARKING
4N25
V YWW 24
21764-25
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137
Vishay
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16