BPW21R

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Vishay Semiconductors

Silicon Photodiode
FEATURES
Package type: leaded
Package form: TO-5
Dimensions (in mm): 8.13
Radiant sensitive area (in mm2): 7.5
High photo sensitivity
Adapted to human eye responsivity
Angle of half sensitivity: = 50
94 8394

Hermetically sealed package

Cathode connected to package

DESCRIPTION

Flat glass window

BPW21R is a planar Silicon PN photodiode in a hermetically

sealed short TO-5 case, especially designed for high
precision linear applications.

Low dark current

Due to its extremely high dark resistance, the short circuit

photocurrent is linear over seven decades of illumination
level.

Compliant to RoHS Directive 2002/95/EC and in

accordance with WEEE 2002/96/EC

On the other hand, there is a strictly logarithmic correlation

between open circuit voltage and illumination over the same
range.

APPLICATIONS

High shunt resistance

High linearity

Sensor in exposure and color measuring purposes

The device is equipped with a flat glass window with built in

color correction filter, giving an approximation to the
spectral response of the human eye.

PRODUCT SUMMARY
COMPONENT

Ira (A)

(deg)

0.5 (nm)

50

420 to 675

PACKAGING

REMARKS

PACKAGE FORM

Bulk

MOQ: 500 pcs, 500 pcs/bulk

TO-5

BPW21R
Note
Test condition see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE
BPW21R
Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

Reverse voltage
Power dissipation

Tamb 50 C

Junction temperature

SYMBOL

VALUE

VR

10

UNIT
V

PV

300

mW

Tj

125

Operating temperature range

Tamb

- 40 to + 125

Storage temperature range

Tstg

- 40 to + 125

t5s

Tsd

260

Connected with Cu wire, 0.14 mm2

RthJA

250

K/W

Soldering temperature
Thermal resistance junction/ambient

Rev. 1.7, 23-Nov-11

Document Number: 81519

1
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BPW21R
www.vishay.com

Vishay Semiconductors

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

IF = 50 mA

VF

IR = 20 A, E = 0

V(BR)

VR = 5 V, E = 0

Iro

Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance

TYP.

MAX.

UNIT

1.0

1.3

30

nA

10

VR = 0 V, f = 1 MHz, E = 0

CD

1.2

nF

VR = 5 V, f = 1 MHz, E = 0

CD

400

pF

38

Dark resistance

VR = 10 mV

RD

Open circuit voltage

EA = 1 klx

Vo

Temperature coefficient of Vo

EA = 1 klx

TKVo

Short circuit current

EA = 1 klx

Ik

Temperature coefficient of IK

280
4.5

EA = 1 klx

TKIk

EA = 1 klx, VR = 5 V

Ira

VR = 5 V, EA = 10-2 to 105 lx

Reverse light current

Sensitivity

MIN.

4.5

450

mV

-2

mV/K

- 0.05

%/K

nA/Ix

Angle of half sensitivity

50

deg

Wavelength of peak sensitivity

565

nm

Range of spectral bandwidth

0.5

420 to 675

nm

Rise time

VR = 0 V, RL = 1 k, = 660 nm

tr

3.1

Fall time

VR = 0 V, RL = 1 k, = 660 nm

tf

3.0

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

1.3

10 3

10 2
VR = 5 V
10 1

10
20
94 8468

40

60

80

100

1.2

1.1

1.0

0.9
0.8

120

Tamb - Ambient Temperature (C)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Rev. 1.7, 23-Nov-11

Ira rel - RelativeReverse Light Current

I ro - Reverse Dark Current (nA)

10 4

0
94 8738

20

40

60

80

100

120

Tamb - Ambient Temperature

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

Document Number: 81519

2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPW21R
www.vishay.com

10

20

10 1
10 0
10 -1
10 -2

40
1.0
0.9

50

0.8

60
70

0.7

10 -3

- Angular Displacement

30

10 2
Srel - Relative Sensitivity

IK - Short Circuit Current (A)

10

Vishay Semiconductors

80

10 -4

10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 10 6
EA - Illuminance (lx)

94 8476

0.6

0.4

0.2

94 8475

Fig. 3 - Short Circuit Current vs. Illuminance

Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement

C D - Diode Capacitance (pF)

1400
1200

E=0
f = 1 MHz

1000
800
600
400
200
0
0.1

10

100

V R - Reverse Voltage (V)

94 8473

S ()rel - Relative Spectral Sensitivity

Fig. 4 - Diode Capacitance vs. Reverse Voltage

1.0
0.8
0.6
0.4
0.2
0
350

94 8477

V Eye

450

550

650

750

- Wavelength (nm)

Fig. 5 - Relative Spectral Sensitivity vs. Wavelength

Rev. 1.7, 23-Nov-11

Document Number: 81519

3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPW21R
www.vishay.com

Vishay Semiconductors

PACKAGE DIMENSIONS in millimeters

9.1 0.1

5.08 nom.

0.1

5.9 0.1

3.1

0.2

8.13

14

-1

(1.65)

Chip position

technical drawings
according to DIN
specifications

0.45

+ 0.02
- 0.05

Drawing-No.: 6.511-5002.01-4
Issue:1; 01.07.96
96 12181

Rev. 1.7, 23-Nov-11

Document Number: 81519

4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 13-Jun-16

Document Number: 91000