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Irf530n PDF
Irf530n PDF
IRF530N
HEXFET Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 100V
l Dynamic dv/dt Rating
l 175C Operating Temperature RDS(on) = 90m
l Fast Switching G
l Fully Avalanche Rated ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 2.15
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
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3/16/01
IRF530N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 90 m VGS = 10V, ID = 9.0A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 12 S VDS = 50V, ID = 9.0A
25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 80V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 37 ID = 9.0A
Qgs Gate-to-Source Charge 7.2 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 9.2 VDD = 50V
tr Rise Time 22 ID = 9.0A
ns
td(off) Turn-Off Delay Time 35 RG = 12
tf Fall Time 25 VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S
60
(Body Diode) p-n junction diode. S
Notes:
Repetitive rating; pulse width limited by Pulse width 400s; duty cycle 2%.
max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents
Starting TJ = 25C, L = 2.3mH operation outside rated limits.
RG = 25, IAS = 9.0A, VGS=10V (See Figure 12) This is a calculated value limited to TJ = 175C .
ISD 9.0A, di/dt 410A/s, VDD V(BR)DSS,
TJ 175C
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IRF530N
4.5V
10 4.5V 10
100 3.5
ID = 15A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
3.0
TJ = 25 C
2.5
(Normalized)
TJ = 175 C 2.0
1.5
1.0
0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
10 0.0
4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)
1600 20
VGS = 0V, f = 1MHz ID = 9.0A
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd VDS = 80V
12
800
Coss 8
400
4
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0 0
1 10 100 0 10 20 30 40
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)
100 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
TJ = 175 C
100
10
10
100sec
1
1msec
1
TJ = 25 C
Tc = 25C
Tj = 175C 10msec
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
20
RD
VDS
VGS
16 D.U.T.
RG
I D , Drain Current (A)
+
-VDD
12
VGS
Pulse Width 1 s
Duty Factor 0.1 %
8
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50
1
0.20
0.10
0.05 P DM
0.02 SINGLE PULSE
0.1
0.01 (THERMAL RESPONSE) t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
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IRF530N
200
1 5V ID
RG D .U .T + 120
- VD D
IA S A
2V0GS
V
tp 0 .0 1
80
50K
12V .2F
QG .3F
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF530N
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" VDD
-
D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% [ ISD ]
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/01
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/