MAC12D, MAC12M, MAC12N

Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high performance fullwave ac control applications
where high noise immunity and commutating di/dt are required.
Blocking Voltage to 800 Volts http://onsemi.com
OnState Current Rating of 12 Amperes RMS at 70C
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 TRIACS
High Immunity to dv/dt 250 V/s Minimum at 125C 12 AMPERES RMS
High Commutating di/dt 6.5 A/ms Minimum at 125C
400 thru 800 VOLTS
Industry Standard TO220 AB Package
High Surge Current Capability 100 Amperes
Device Marking: Logo, Device Type, e.g., MAC12D, Date Code
MT2 MT1
G
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive OffState Voltage(1) VDRM, Volts
(TJ = 40 to 125C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC12D 400
MAC12M 600
MAC12N 800
On-State RMS Current IT(RMS) 12 A
(All Conduction Angles; TC = 70C)
Peak Non-Repetitive Surge Current ITSM 100 A 1
2
(One Full Cycle, 60 Hz, TJ = 125C) 3

Circuit Fusing Consideration I2t 41 A2sec TO220AB

(t = 8.33 ms) CASE 221A
Peak Gate Power PGM 16 Watts STYLE 4
(Pulse Width 1.0 s, TC = 80C)
PIN ASSIGNMENT
Average Gate Power PG(AV) 0.35 Watts
(t = 8.3 ms, TC = 80C) 1 Main Terminal 1

Operating Junction Temperature Range TJ 40 to C 2 Main Terminal 2

+125 3 Gate
Storage Temperature Range Tstg 40 to C 4 Main Terminal 2
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
ORDERING INFORMATION
voltage ratings of the devices are exceeded. Device Package Shipping

MAC12D TO220AB 50 Units/Rail

MAC12M TO220AB 50 Units/Rail

MAC12N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 1999 1 Publication Order Number:

September, 1999 Rev. 3 MAC12/D
 MAC12D, MAC12M, MAC12N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance C/W
Junction to Case RJC 2.2
Junction to Ambient RJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds TL 260 C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25C IDRM, 0.01 mA
(VD = Rated VDRM, VRRM, Gate Open) TJ = 125C IRRM 2.0
ON CHARACTERISTICS
Peak OnState Voltage(1) (ITM =
17 A) VTM 1.85 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) IGT mA
MT2(+), G(+) 5.0 13 35
MT2(+), G() 5.0 13 35
MT2(), G() 5.0 13 35
Hold Current (VD = 12 V, Gate Open, Initiating Current =
150 mA) IH 20 40 mA
Latch Current (VD = 24 V, IG = 35 mA) IL mA
MT2(+), G(+) 20 50
MT2(+), G() 30 80
MT2(), G() 20 50
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VGT Volts
MT2(+), G(+) 0.5 0.78 1.5
MT2(+), G() 0.5 0.70 1.5
MT2(), G() 0.5 0.71 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 6.5 A/ms
(VD = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/s, Gate Open,
TJ = 125C, f = 250 Hz, No Snubber)
Critical Rate of Rise of OffState Voltage dv/dt 250 500 V/s
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C)
Repetitive Critical Rate of Rise of On-State Current di/dt 10 A/s
IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/sec; f = 60 Hz
(1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

http://onsemi.com
2
 MAC12D, MAC12M, MAC12N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II () IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT + IGT

() MT2 () MT2

Quadrant III () IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With inphase signals (using standard AC lines) quadrants I and III are used.

http://onsemi.com
3
 MAC12D, MAC12M, MAC12N

100 1.10

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)
1.00 Q3
Q3
Q2 0.90 Q1

Q1 0.80 Q2
10
0.70

0.60

0.50

1 0.40

40
25
10 5 20 35 50 65 80 95 110 125
40
25
10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100

MT2 POSITIVE
HOLDING CURRENT (mA)

LATCHING CURRENT (mA)

Q2
Q1

Q3
10 10
MT2 NEGATIVE

1 1

40
25
10 5 20 35 50 65 80 95 110 125
40
25
10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)

Figure 3. Typical Holding Current Figure 4. Typical Latching Current

versus Junction Temperature versus Junction Temperature

125 20
P(AV), AVERAGE POWER DISSIPATION (WATTS)

DC
18
180
120, 90, 60, 30 16
TC, CASE TEMPERATURE (C)

110 120
14
12
95 10
8 90
180
6 60
80 30
4
DC
2
65 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

http://onsemi.com
4
 MAC12D, MAC12M, MAC12N

100 1

r(t), TRANSIENT THERMAL RESISTANCE

TYPICAL @
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
TJ = 25C
MAXIMUM @ TJ = 125C

(NORMALIZED)
10
0.1

MAXIMUM @ TJ = 25C
1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

http://onsemi.com
5
 MAC12D, MAC12M, MAC12N

PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE Z

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
T PLANE
Y14.5M, 1982.
C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04

STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2

http://onsemi.com
6
 MAC12D, MAC12M, MAC12N

Notes

http://onsemi.com
7
 MAC12D, MAC12M, MAC12N

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor Spanish Phone: 3033087143 (MonFri 8:00am to 5:00pm MST)
P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlitspanish@hibbertco.com
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada ASIA/PACIFIC: LDC for ON Semiconductor Asia Support
Email: ONlit@hibbertco.com Phone: 3036752121 (TueFri 9:00am to 1:00pm, Hong Kong Time)
Fax Response Line: 3036752167 or 8003443810 Toll Free USA/Canada Toll Free from Hong Kong & Singapore:
00180044223781
N. American Technical Support: 8002829855 Toll Free USA/Canada Email: ONlitasia@hibbertco.com

EUROPE: LDC for ON Semiconductor European Support
German Phone: (+1) 3033087140 (MF 1:00pm to 5:00pm Munich Time)
Email: ONlitgerman@hibbertco.com
French Phone: (+1) 3033087141 (MF 1:00pm to 5:00pm Toulouse Time)
Email: ONlitfrench@hibbertco.com
English Phone: (+1) 3033087142 (MF 12:00pm to 5:00pm UK Time)
Email: ONlit@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1418549
Phone: 81357402745
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com

EUROPEAN TOLLFREE ACCESS*: 0080044223781 For additional information, please contact your local
*Available from Germany, France, Italy, England, Ireland Sales Representative.

http://onsemi.com MAC12/D
8
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.