Shielding

Introduction

Concept of shielding
Shielding of a metal shield (theory)

For E field
Ei
S .E. 20 log
Et

For H field
Hi
S .E. 20 log
Ht

Do they be equal ?
Shielding of a metal shield (theory)

It depends.

For plane wave, they are equal

But for near field, they are not.
Shielding of a metal shield (theory)

1. Plane wave assumption

2. Continuity of E and H at each boundary

Ei (0 )2 0 2t / j 2 t t / j t j 0t
[1 ( )e e ]e e e
Et 40 0
How to derive?
j
where j :Skin depth
11.1 Shielding effectiveness. (S.E.)
a. Definition

Ei
1 for electric firld : S .E. 20 log
Et

Hi
2 for magnetic field : S .E. 20 log
Ht
note:
1. If the incident field is an uniform plane wave,and the medium on
each side of the barrier are identical, 1 and 2 definitions are
identical.
2. For near fields and/or different medium, 1 and 2 are not
equivalent.
3. Definition 1 (for E field) is taken as standard for 2 case.
C. Causes of shield
(1) Re flection.
(2) Absorption : e- z ( : attenuation)

1

(3) Multiple reflection

Note : (1) & (2) will increase the S .E. of the barrier , but (3) will decrease
the S .E. of barrier.

S .E.dB RdB AdB M dB

 11.2 Shielding effectiveness: far field sources
11.2.1. Exact solution

(1) For plane wave :

E i Ei e- j0 z a x
Ei
H i e- j0 z a y
0
- j 0 z
E r E r e a x
r
H r - e- j0 z a y
E
0

E1 E1 e- z a x

E
H 1 1 e- z a y where
0

E 2 E 2 e- z a x 0 0 0 0

E 0
H 2 - 2 e- z a y 0
0 0

E t Et e- j0 z a x j j j
t
E - j 0 z j
Ht 0 e a y
j

Exact solution
(2) E is known, and to determine the remaining amplitudes.
i

E r , E1, E 2 , and E t .
B.C. at Z 0 E i E r E1 E 2 E i E r E1 E 2
Ei E E E
H i H r H1 H 2 r 1 2

0 0 0 0

- t - t - t
at Z t E1 E 2 E t E1 e E2 e Et e

E1 - t E2 - t Et - t
H1 H 2 H t e - e e

0 0 0
2

0 - -2t t j t - j t

3 . 1 ( 0 )2 e e e e e 0
- j 2 t

4
0 0

exact solution. where 1/ , j in barrier metal.
 4 Simplifications:
1. assume the barrier is a "good conductor".


0-
0
1.
0
2. skin depth barrier thickness t .
-t
- t - t - j t - j t
e e e e
e 1

2


0
Ei -t 0 -t

e

e

Et 4 0 4
 0 t
5 S .EdB 20 log10
20 log10 e
M dB .
4

0
t

P.S . : 20 log 10
: RdB , 20 log 10 e : AdB .
4
6 The Multiple - reflection term is the middle term of (3).

- -2 t 2

20 log 1 - 0 e e
- j 2t
M dB

0
-2 t - j 2t
20 log 1- e
e
0 ( if t )

1
where for good conductor .

 11.2.2 Approximate solution
Assumption : 1 0 (a good conductor )
2 t

a. Re flection Loss ( E field )

t
E 2 0.
E1 2
1
Ei 0
E t 20
2
E1 0
3 In the absence of attenuation

Et E E1 40

t
the same as exact solution.

2
Ei E1 E i 0

0
2
Ei 0
4 RdB 20 log10
Et
20 log
40
20 log
4

0
Note : The transimission coefficient is very small
2
0 at the Boundary 1, and is approximately 2

0
at the Boundary 2.
very little of E field is transmitted through the B.1.


E1
H1 E1 0 20
1


2
Hi Ei Ei 0
0

if 0

Et
Ht 0 Et 2
2 0
E1 0

H1 E1 0


if 0

Ht Ht Ht 40
3


2


Hi Hi Hi 0

Note:

Et Ht 40
1.
0
2
Ei Hi
2. But primary transmission of H field occurs at the boundary 1,whereas
the primary transmission of the E field occurs at the boundary 2.
3. It means that "thick" boundary has more effect on shielding against H
field than to the E field.

C. Absorption loss
E1 is attenuated in the conductor.
Absorption factor
t t
A e
AdB 20 log e
d. Multiple Reflection Loss

When t >> the multiple reflection loss may be important.

(1) for magnetic field
1.

H t1 TH H in TE H in
0
2
H in
0

H in

H t1

H t2

boundary 1 boundary 2
2. The reflected wave is
E e rt H in at boundary 1
0 rt
e H in
0
2 2 rt
E e H in at boundary 2

3.
2 2 rt
H t 2 TH E e H in
 4.
H t H t1 H t 2 H t 3

H t1 1 E e rt 2

E e rt 4


let E e rt
H t1
, 1
(1 )
2

5.
H t H t1
SE dB 20 log 20 log 20 log 1 2 4
H i H i
6.
2
0 2 t
M dB 20 log 1 e
0
2
0 2t j 2t
20 log 1 e e
0
same as exact solution
11.3 Shielding effectiveness - near field sources

a. In the far field:

(1) E and H are orthogonal

E
(2) 0
H
(3)d 30
b. Near field for Hertzian dipole
(1)
j j j
E 0 r 0 r
2
0 r
3

Zw 0
j
0 r
H 1
0 r
2

j
0 r
3
0
0 90
1 0 r
0 r
2
(2)
0
Z w 60 0
e 2 r
r
0

E near field far field

H
(3) electric dipole is a high
impedance source
0

r
0
3
c. Near field for magnetic dipole (loop)
(1)
j 1
E 0 r 0 r
2

Zw 0

H 1 1 j
0 r 0 r
2
0 r
3

0 0 r 90
(2)

Z w 2f 0 2369
m 0
(3)
E near field far field
H magnetic dipole is a low
impedance source in the
0
near field

3 0
d. Reflection loss for Electric source
(1) we know for plane wave near field

E i
RdB 20 log
E t

(2) 20log
0
2
20log
0
4 0 4

using Z w j 0 0
0 r
Z w r
RdB 20 log 322 10 log 3 2
4
r r
f
 Shielding of a metal shield (Near Field)

Electric dipole

0
Z w 60
r

Magnetic dipole r
Z w 2369
0
Shielding of a metal shield (Near Field)

For electric dipole

r
Re 322 10log( )
r f r
3 2

For magnetic dipole

fr 2 r
Rm 14.57 10log( )
r
Shielding of a metal shield (Near Field)

1. Reflection Loss increase as

frequency decrease for E field
2. Reflection Loss decrease as
frequency decrease for H field

Note: The Absorption loss also

Decrease as frequency decrease for
H-field.

How to solve the SE of magnetic

field?
An example of S.E. for copper plate
Low Frequency, Magnetic Shielding
Two approaches
Low Frequency, Magnetic Shielding

Two factors that may degrade the

ferromagnetic material:
1. Increasing frequency.
2. Increasing the field strength.
Larger than 4KHz, the u is the same
with the steel

Thats why we use the steel as

The magnetic shielding material for
Switch-mode Power Supply (20-100KHz
Low Frequency, Magnetic Shielding

Phenomenon of the saturation of ferromagnetic materials

saturation
When increase the H-field
Low Frequency, Magnetic Shielding

Solution: Using multi-layer to reduce the effect of the saturation

The effect of aperture

In practice, the S.E. is limited by the necessary apertures and discontinuities.

The simplest formula

SE 20log
2d
The modified formula

Ex: 20dB SE for 1GHz

then, d < 1.6cm
The effect of mesh and Honeycomb

SE can reach 100dB

Why ?
The effect of Seams
Poor Better

Best
The effect of aperture orientation

Which one is better?

By this trick, the SE can be improved up to 10dB

The effect of image plane
Enclosure resonance

F 150 (k / l )2 (m / h)2 (n / w)2 MHz

F ~ 212/l ~ 212/h ~ 212/w for equal square enclosure

Gasket and Contact Strip

Choosing concern:
1. Conductivity
2. Ease of mounting
Measurement of SE

Method 1: EN50147-1
b. Measurement of S.E.
Measurement of SE
Method two: Coaxial transmission line model