Department of Electrical Engineering

Indian Institute of Technology, Kanpur

EE 311 Home Assignment #11 Assigned: 6.4.17 Due: 13.4.17

All problems are from the text (pp.272-273)

1. Prob. 5.11 (Use Ebers-Moll model)

2. Prob. 5.14 (Use Ebers-Moll model)

3. Prob. 5.18

4. Prob. 5.19

5. Roughly estimate the values of VBEL, VBEH, ICL, and ICH of an n+pn transistor with the
following specifications: electrically neutral base width WB = 0.5 m, emitter-base junction
depletion region width Wbe = 0.1 m (assume constant, i.e., independent of bias), base doping
= 1016 cm3 (uniform), generation lifetime in the emitter-base depletion region = 2 sec,
electron lifetime n in p-base = 100 nsec, cross-sectional area A of the device = 104 cm2, and
electron mobility n in p-base = 1200 cm2/V-sec.