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reference circuits
Willy Sansen
KULeuven, ESAT-MICAS
Leuven, Belgium
willy.sansen@esat.kuleuven.be
VDD Vout
R1 + R2
+ R1 Vout = Vref
- R2
+
- R2
Vref
Iout Iout
V1 V2
+ + +
- - R -
+
- Vref R
Vref V1 - V2
Iout = Iout =
R R
Principles
Bipolar bandgap references
CMOS bandgap references
Bandgap references < 1 V
Current references
LDO Regulators
VBE
IC = IS exp ( )
IB kT/q
+ VBE - Vg0
or IC = CT exp ( )
VBE kT/q
- - 2 mV/oC
with Vg0 = 1268 mV - kTr/q
- 2 V/oC and Tr = 323 K
T (K)
m=1 IC ~ T gm constant
m=0 IC constant gm ~ T-1
m= - IC ~ VBE gm ~ T-x
VBE
Vref 1.2 V
Vg00
VC 0.6 V is PTAT
- 2 mV/oC
VBE 0.6 V
0 Tr T
kT
Vref = VBE + VC VC ~
q
VBE kT IC
IC = IS exp ( ) VBE = ln
kT/q q IS
IC IC IS2
kT
VBE = ln
q IS1
Q1 Q2
+V kT kT
1: r BE VBE = ln r IC = ln r
q qR2
R2
- r is 10-1000 !!
Vref - 0 Tr T
Q1 Q2
kT kT A
1: r +V VBE = ln nr IC2 = ln nr =
BE q qR2 R2
R2
- - R1 kT
Vref = VBE + VC VC = n ln nr
R2 q
Willy Sansen 10-05 1610
Noise Bandgap reference - 1
n: 1 kT A kT
IC2 = ln nr = A= ln nr 0.12 V
Q3
qR2 R2 q
Q4
R1 kT R1
VC = n ln nr = n A = nR1IC2 0.6 V
+ + R2 q R2
VC R1 IC2
Vref
- R1 >> 1/gm1 R1IC1 0.5 V gm1R1 20
1: r +V
BE Noise sources : R1 R2
R2 gm3,4 negligible for large VGS -VT or RE !!
- -
n: 1 kT A kT
IC2 = ln nr = A= ln nr 0.12 V
Q3
qR2 R2 q
Q4
R1 kT R1
VC = n ln nr = n A = nR1IC2 0.6 V
+ + R2 q R2
VC R1 IC2
- dVRef2 = 4kT R1 df + R12n2 4kT/R2 df
Vref
R1 2
Q1 Q2 = 4kT R1 df (1 + n )
R2
1: r +V
BE
R1 2 n n VC nVC
R2 n = R1n = = >> 1
- - R2 R2 R2 IC2 VBE
2= R1 2
n: 1 dVRef 4kT R1 n df
R2
Q4 Q3
2 2 V 2
R1 2 (R1 n) 1 CV C
R1 n = = 2
=
+ + R2 R2 R2 IC2 IC2 VBE
VC R1 IC2
Vref
-
Q1 Q2 VC 0.6 V :
1: r +V >> Large IC2 : small Rs
BE
R2 >> Large r : large VBE
- -
Principles
Bipolar bandgap references
CMOS bandgap references
Bandgap references < 1 V
Current references
LDO Regulators
Insensitive to and VE !
kT kT
+ VBE = ln nr IC = ln nr
n: 1 q qR2
R1
Vref = 2VBE + VR3
2Vref
1: r 1 1 kT
R2 VR3 = 2R3 ( + ) ln nr
R1 R2 q
2R3
-
Ref.: G.Meijer, ACD , Kluwer 1995
1 : 1 IC
Q4 Q3
IC1
unwanted
IC1
operating point
IC2
+
R1 IC2
required operating point
Vref
Q1 Q2 VBE1
1: r
R2 R1 kT
- Vref = VBE1 + ln r
R2 q
Cstart RSTART
R3 R1 R3 R1
Q4 Q1 D2
Q3 Q2 Q2 Q1
r: 1 4x r: 1
R2 R2
R R
+ 1:n RPTAT
- +
-
RPTAT + +
Vref
Vref
R R
1:n - -
Bad PSRR
VIN
R R
+ + R3 + R4
- VOUT = Vref
R3
1:8 R4
IB (const) 1.5 + 7 + 7 A
1.5 A
R1 R2 Vref = VBE2 + R2 I (VBE)
I (const)
7 A 7 A - R1(I (const) + I (PTAT))
I(PTAT) I (VBE) - VBE1
Q1
VPTAT + AVBE2
+ Q2 R4
Vref R3
210 mV R5
- Ref. Widlar JSSC Dec.78, 838-846
Q2 Q1
IB r : 1 : 1
-
Ref. Song JSSC Dec.83, 634-643, Degrauwe ISSCC Febr.85, 142-143
Principles
Bipolar bandgap references
CMOS bandgap references
Bandgap references < 1 V
Current references
LDO Regulators
Gate oxyde
Polysilicon gate
1:1
R R
+
+
- +
-
+
RPTAT Vref RPT
n:1 Vref
n:1
-
-
PDII
1.2 0.02 V
PDI 10 A max.
4000 ppm
-50 oC
+150 oC
Startup
Ref. MIETEC; Meijer, ACD, Kluwer 1995
1.2 V 1.2 V
1.236 V
20 mV
M : 1 85 ppm/oC
R2 kT
VBG = VBE2 + N ln [M (N+1)]
R1 q Ref.Tham, JSSC, May 95, pp.586-590
2.48 V
24 mV
21 ppm/oC
5 V 1.2 mA
VD = VD2 - VD1
VOUT = VD2 + AG VD
VOUT 1.12 V
9 mV 0 70 oC
3.7 V; 0.4 mA
A = 1.5
B=4
G=6
AD1/AD2 = 8
IB1 IB2
Sw2 +
t1: open Vout ~ VBE
t2: open -
t3: closed Sw1
t1: closed : Vout = VBE1
t2: open
C1 C2 C1+C2
t3: open + V BE21
C2
Ref. Gilbert, ACD, Kluwer 1995
VGS
IB IDS = IDS0 exp ( )
nkT/q
+
VGS CD
n=1+
- -2 mV/oC Cox
- 20 V/oC CD (VCB)
Principles
Bipolar bandgap references
CMOS bandgap references
Bandgap references < 1 V
Current references
LDO Regulators
R3 518 mV
VBE R2
15 mV
R4
R4 R4 kT
Vref = VBE + ln n n = 100
R2 R3 q
Banba, .., JSSC May 99, 670-673
1 : 1 1 : 1 1V
R3
Vref = VBE + 92 A
R2
R3 kT -
ln n + Vref
R0 q
+
R0 + 0.536 V
IPTAT kT ln n
R3
- q R0
Ref.:
Malcovati, JSSC R1 R2 = R1
1 n
July 01, 1076-1081 -
Willy Sansen 10-05 1638
1 V opamp (1.2 MHz 25 pF 35 A)
VB
Vout
Cc
Vin+ Vin-
1 : 1 1 : 1
-
VB + Vref
MS
+
R0 0.536 V
R1 R2 = R1
1 n
-
Willy Sansen 10-05 1640
Curvature correction
1 : 1 1 : 1 1V
92 A
-
VB + Vref
R4
VBE +
R0 R5 0 oC
I(ct) IPTAT I(ct) 80oC
0.8mV
R1 R2 = R1 0.3mV
1 n
-
Willy Sansen 10-05 1641
CMOS Bandgap with supply < 1 V
R3 1 : 1 1 : 1 1V
Vref = VBE 18 A
R2
R3 kT -
+ ln n + Vref
R1 q
R2a R2a +
0.603 V
R1 R3
Principles
Bipolar bandgap references
CMOS bandgap references
Bandgap references < 1 V
Current references
LDO Regulators
Iout
Vref
Iout =
+ R
-
+
Temperature coefficient :
- R depends on
Vref
Vref
R!
cm-3
required operating
point Iref
V2 VT1 VT2+V2 VBE1
M1 + - M2
W1 V2 2 1
1:b Iref = Kn m=
L1 (1 - m)2 ab
Vcc > 3.5 V 2 A
Kn ~ T -1.5 V2 ~ T Iref ~ T -0.5 0.774 0.02 A
3 % 0o ... 80oC
V2 0.32 V Ref. Op t Eynde, JSSC June 88, pp. 821-824
Vo
nkT Sb
Vo = ln (1 + )
q Sa
1
Reff =
2fcC1
Vref
Iref =
Reff
C1 = C2 = 3 pF fc = 270 kHz 5 V 4 A
Ref. H.Klein, W. Engl, ESSCIRC 83, pp. 119-122
Principles
Bipolar bandgap references
CMOS bandgap references
Bandgap references < 1 V
Current references
LDO Regulators
+ R1 - R1
- 2.9 V + 1.3 V
+ + Gain !
- R2 - R2
Vref Vref
R1 + R2
VGS 0.9 V Vout = Vref
R2
Principles
Bipolar bandgap references
CMOS bandgap references
Bandgap references < 1 V
Current references
LDO Regulators