EE 619

RF MICROELECTRONICS
HOMEWORK 1
DUE 23rd JAN 2017 MONDAY Before Midnight Upload in Moodle (TimeStamp)

(Late submissions will not be accepted for any reason)

The BlueTooth PA (Power Amplifier) in the figure below must deliver 20 dBm power to 50 Ohm load
resistance. Supply voltage for the PA is 1V. You need to design the matching network to achieve this
specification. Frequency of operation is 2.5 GHz.

1. Matching network specifications (Rin, Q) -------5 points

2. Design High pass L match network (L,C values) -------5 points

3. Design Pi Match for 250 MHz bandwidth -------5 points

4. Design T Match for 250 MHz bandwidth -------5 points

In problem 2, can you suggest why high pass match is better than low pass? If Max C on-chip = 200 pF
and Max L on-chip = 20 nH, which network will be easier to integrate on chip.

Vdd 1V 2Vdd

Vdd
Large L 0

Vout
Matching
Network
Vsig
RL 50 ohm
Rin

CMOS PA