2 The Power Diode 25

In addition to the above mentioned diode parameters, one

should also calculate parameters like the peak forward voltage,
reverse recovery time, case and junction temperatures,
etc. and check them against the datasheet values. Some of
these datasheet values are provided in Fig. 2.20 for the selected
diode V30. Figures 2.212.23 give the standard experimental
relationships between voltages, currents, power, and case temperatures
for our selected V30 diode. These characteristics help
a designer to understand the safe operating area for the diode,
and to make a decision whether or not to use a snubber or
a heat sink. If one is particularly interested in the actual reverse
recovery time measurement, the circuit given in Fig. 2.24 can
be constructed and experimented upon.
Peak forward voltage drop (V)
Forward characteristic
Single-phase half sine wave
Conduction : 10ms 1 cycle
TL = 25C
TL = 150C
Peak forward current (A)
0
0.1
1.0
10
100
12345
FIGURE 2.21 Variation of peak forward voltage drop with peak
forward current.
Average forward current (A)
0
0
0.1
0.4
0.2
0.6
0.8
Max. average forward power dissipation
(Resistive or inductive load)
Max. average forward power dissipation (W)
0.2 0.3 0.4 0.5
Single-phase(50Hz)
DC
0.6
FIGURE 2.22 Variation of maximum forward power dissipation with
average forward current.
Max. allowable ambient temperature
(Resistive or inductive load)
Average forward current (A)
00
40
80
120
160
L = 10mm
20mm
25mm
PC board (100x180x1.6t)
Copper foil (5.5)
LL
Single-phase half sine wave
180conduction (50Hz)
200
0.1 0.2 0.3 0.4 0.5 0.6
Max. allowable ambient temperature (C)
FIGURE 2.23 Maximum allowable case temperature with variation of
average forward current.
Reverse recovery time(trr) test circuit
15V
22s
50f
2mA
15V
600
0t
l 0.1Irp rp
trr
D.U.T
FIGURE 2.24 Reverse recovery time (trr ) measurement.
References
1. N. Lurch, Fundamentals of Electronics, 3rd ed., John Wiley & Sons Ltd.,
New York, 1981.
2. R. Tartar, Solid-State Power Conversion Handbook, John Wiley & Sons
Ltd., New York, 1993.
3. R.M. Marston, Power Control Circuits Manual, Newnes circuits manual
series. Butterworth Heinemann Ltd., New York, 1995.
4. Internet information on Hitachi Semiconductor Devices,
http://semiconductor.hitachi.com.
5. International rectifier, Power Semiconductors Product Digest, 1992/93.
6. Internet information on, Electronic Devices & SMPS Books,
http://www.smpstech.com/books/booklist.htm