;

.
.

.
 MOS
MOSFET
MOSFET

MOS
 I/V MOS

:
Qdep
VTH = MS + 2F +
Cox

F = (kT/ q)ln(Nsub/ ni )

Q dep = 4 q s F N sub

PMOS
 I/V
= Qd

Q d = WC ox (VGS VTH )

Qd (x) = WCox[VGS V(x) VTH]

ID = WCox[VGS V(x) VTH]

dV(x) dV(x)
= , (x) = ID = WCox[VGS V(x) VTH]n ,
dx dx
L VDS

x =0
I D dx =
V =0
WC ox [VGS V( x ) VTH ] n dV( x ),
W 1 2
I D = n C ox [(VGS VTH )VDS VDS ].
L 2
 I D / V DS = 0 VDS = VGS VTH

1 W
ID = n C ox ( V GS V TH ) 2
2 L
VGS VTH

W
VDS << 2(VGS VTH ), I D n Cox (VGS VTH )VDS ,
L

1
Ron =
W
nCox (VGS VTH)
L
VDS > (VGS VTH )

1 W
ID = n C ox (VGS VTH ) 2
2 L

W 1 2 1 W
PMOS I D = p C ox [( VGS VTH )VDS VDS ]. ID = pCox (VGS VTH)2
L 2 2 L

I D W
gm = VDS
=nCox (VGSVTH)
VGS L

W 2I D
g m = 2 n C ox ID =
L VGS VTH


V = V 0 + ( 2 F + VSB 2 F ) = 2qs sub / Cox

1 W
I1 = nCox (Vin Vout VTH0 )2
2 L

1 W
ID n C ox ( VGS VTH ) 2 (1 + VDS )
2 L
= ~1/L

ID
V GS gm =
ID = 0 exp VT
VT
>1
 MOS

MOS

MOS

C 1 = WLC ox
C 2 = WL 2 q s sub /( 2 F ) C3, C4 (Cov)

C j = C j 0 /[1 + V R ( 2 F )] m Cjsw
 MOS
I W W 2I D
gm = D =nCox (VGSVTH) = 2 n Cox I D =
VGS
VDS
L L VGS VTH

V DS 1 1 1
rD = = =
I D ID / VDS 1 C W (V V )2 I D
n ox GS TH
2 L

I D W V
g mb = = n Cox (VGS VTH )( TH ).
V BS L VBS
V TH V TH
= = ( 2 F + V SB ) 1 / 2
V BS V SB 2

gmb=gm = g m
2 2F +VSB
 MOS

NMOS

LEVEL=1 VTO=0.7 GAMMA=0.45 PHI=0.9

NSUB=9e+14 LD=0.08e-6 UO=350 LAMBDA=0.1

TOX=9e-9 PB=0.9 CJ=0.56e-3 CJSW=0.35e-11

MJ=0.6 MJSW=0.2 CGDO=0.4e-11 JS=1.0e-8

PMOS

LEVEL=1 VTO=-0.8 GAMMA=0.4 PHI=0.8

NSUB=5e+14 LD=0.09e-6 UO=100 LAMBDA=0.2

TOX=9e-9 PB=0.9 CJ=0.94e-3 CJSW=0.32e-11

MJ=0.5 MJSW=0.3 CGDO=0.3e-11 JS=0.5e-8