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Irf3205 PDF
Irf3205 PDF
IRF3205
HEXFET Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 55V
l Dynamic dv/dt Rating
l 175C Operating Temperature RDS(on) = 8.0m
l Fast Switching G
l Fully Avalanche Rated ID = 110A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.75
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
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IRF3205
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 8.0 m VGS = 10V, ID = 62A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 44 S VDS = 25V, ID = 62A
25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 44V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 146 ID = 62A
Qgs Gate-to-Source Charge 35 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 54 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 14 VDD = 28V
tr Rise Time 101 ID = 62A
ns
td(off) Turn-Off Delay Time 50 RG = 4.5
tf Fall Time 65 VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S
390
(Body Diode) p-n junction diode. S
Notes:
Repetitive rating; pulse width limited by Pulse width 400s; duty cycle 2%.
max. junction temperature. ( See fig. 11 ) Calculated continuous current based on maximum allowable
Starting TJ = 25C, L = 138H junction temperature. Package limitation current is 75A.
RG = 25, IAS = 62A. (See Figure 12)
This is a typical value at device destruction and represents
ISD 62A, di/dt 207A/s, VDD V(BR)DSS, operation outside rated limits.
TJ 175C This is a calculated value limited to TJ = 175C.
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IRF3205
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
I D , Drain-to-Source Current (A)
4.5V
10 10
4.5V
1000 2.5
RDS(on) , Drain-to-Source On Resistance
ID = 107A
I D , Drain-to-Source Current (A)
TJ = 25 C
2.0
TJ = 175 C
100
(Normalized)
1.5
1.0
10
0.5
V DS = 25V
20s PULSE WIDTH VGS = 10V
1 0.0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)
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IRF3205
6000 16
VGS = 0V, f = 1 MHZ ID = 62A
4000
Ciss 10
3000 8
6
2000 Coss
4
1000
Crss 2
0 0
1 10 100 0 20 40 60 80 100 120
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 175 C
100
ID , Drain Current (A)
1000
10us
10 100
100us
TJ = 25 C
1ms
1 10
10ms
TC = 25 C
TJ = 175 C
V GS = 0 V Single Pulse
0.1 1
0.2 0.8 1.4 2.0 2.6 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
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IRF3205
RD
120 VDS
LIMITED BY PACKAGE VGS
D.U.T.
100 RG
+
V DD
ID , Drain Current (A)
-
80
10V
Pulse Width 1 s
Duty Factor 0.1 %
60
20 90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( C) 10%
VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
1
Thermal Response(Z thJC )
D = 0.50
0.20
0.1 0.10
0.05 PDM
SINGLE PULSE t1
0.02 (THERMAL RESPONSE)
0.01 t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRF3205
500
300
RG D .U .T +
- VD D
IA S A
20V
tp 0 .0 1 200
V (B R )D S S
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
50K
12V .2F
QG .3F
10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF3205
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/01
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/