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SEMICONDUCTOR TECHNICAL DATA by 2N4400/D

   

NPN Silicon

*Motorola Preferred Device

COLLECTOR
3

2
BASE

1
EMITTER 1
2
3
MAXIMUM RATINGS
Rating Symbol Value Unit CASE 2904, STYLE 1
TO92 (TO226AA)
Collector Emitter Voltage VCEO 40 Vdc
Collector Base Voltage VCBO 60 Vdc
Emitter Base Voltage VEBO 6.0 Vdc
Collector Current Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Device Dissipation @ TC = 25C PD 1.5 Watts
Derate above 25C 12 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junction to Case RqJC 83.3 C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) V(BR)CEO 40 Vdc
(IC = 1.0 mAdc, IB = 0)
Collector Base Breakdown Voltage V(BR)CBO 60 Vdc
(IC = 0.1 mAdc, IE = 0)
Emitter Base Breakdown Voltage V(BR)EBO 6.0 Vdc
(IE = 0.1 mAdc, IC = 0)

Base Cutoff Current IBEV 0.1 Adc

(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current ICEX 0.1 Adc
(VCE = 35 Vdc, VEB = 0.4 Vdc)

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data 1

Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain hFE
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N4401 20

(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N4400 20

2N4401 40

(IC = 10 mAdc, VCE = 1.0 Vdc) 2N4400 40

2N4401 80

(IC = 150 mAdc, VCE = 1.0 Vdc) 2N4400 50 150

2N4401 100 300

(IC = 500 mAdc, VCE = 2.0 Vdc) 2N4400 20

2N4401 40
Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) 0.4 Vdc
Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) 0.75
Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.75 0.95 Vdc
Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) 1.2

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product fT MHz
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N4400 200
2N4401 250
CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb 6.5 pF
EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 30 pF
Input Impedance hie k ohms
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4400 0.5 7.5
2N4401 1.0 15
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 104
SmallSignal Current Gain hfe
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4400 20 250
2N4401 40 500
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mhos

SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE = 2.0 Vdc, td 15 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr 20 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts 225 ns
Fall Time IB1 = IB2 = 15 mAdc) tf 30 ns
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V + 30 V
1.0 to 100 s, 1.0 to 100 s, 200
200
+16 V DUTY CYCLE 2.0%
+16 V DUTY CYCLE 2.0%

0 0
1.0 k 14 V 1.0 k CS* < 10 pF
2.0 V CS* < 10 pF
< 2.0 ns < 20 ns

Scope rise time < 4.0 ns 4.0 V

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. TurnOn Time Figure 2. TurnOff Time

2 Motorola SmallSignal Transistors, FETs and Diodes Device Data

  
TRANSIENT CHARACTERISTICS
25C 100C

30 10
7.0
VCC = 30 V
20 5.0
IC/IB = 10
Cobo 3.0
CAPACITANCE (pF)

QT

Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
5.0 0.5

Ccb 0.3
3.0 0.2 QA

2.0 0.1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitances Figure 4. Charge Data

100 100
70 IC/IB = 10 70 VCC = 30 V
tr IC/IB = 10
50 50
tr @ VCC = 30 V
30 30 tf
t, TIME (ns)

t, TIME (ns)

tr @ VCC = 10 V
td @ VEB = 2.0 V
20 td @ VEB = 0 20

10 10

7.0 7.0

5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time Figure 6. Rise and Fall Times

300 100
ts = ts 1/8 tf VCC = 30 V
70
IB1 = IB2 IB1 = IB2
200
IC/IB = 10 to 20 50 IC/IB = 20
t s, STORAGE TIME (ns)

t f , FALL TIME (ns)

30
100
20 IC/IB = 10
70

50 10

7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data 3

 
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25C
Bandwidth = 1.0 Hz
10 10
IC = 1.0 mA, RS = 150 f = 1.0 kHz
IC = 500 A, RS = 200 RS = OPTIMUM
8.0 8.0
IC = 100 A, RS = 2.0 k RS = SOURCE IC = 50 A
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 50 A, RS = 4.0 k RS = RESISTANCE IC = 100 A
6.0 6.0 IC = 500 A
IC = 1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 9. Frequency Effects Figure 10. Source Resistance Effects

h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
This group of graphs illustrates the relationship between selected from both the 2N4400 and 2N4401 lines, and the
hfe and other h parameters for this series of transistors. To same units were used to develop the correspondingly num-
obtain these curves, a highgain and a lowgain unit were bered curves on each graph.
300 50 k
2N4401 UNIT 1
200 2N4401 UNIT 2
hie , INPUT IMPEDANCE (OHMS)

20 k 2N4400 UNIT 1
2N4400 UNIT 2
hfe , CURRENT GAIN

10 k
100
5.0 k
70
2N4401 UNIT 1
50
2N4401 UNIT 2 2.0 k
2N4400 UNIT 1
30 2N4400 UNIT 2 1.0 k

20 500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Input Impedance

10 100
h re , VOLTAGE FEEDBACK RATIO (X 10 4 )

7.0
hoe, OUTPUT ADMITTANCE (m mhos)

5.0 50
2N4401 UNIT 1
3.0 2N4401 UNIT 2
2N4400 UNIT 1 20
2.0 2N4400 UNIT 2
10
1.0
0.7 5.0
2N4401 UNIT 1
0.5 2N4401 UNIT 2
2.0 2N4400 UNIT 1
0.3 2N4400 UNIT 2

0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance

4 Motorola SmallSignal Transistors, FETs and Diodes Device Data

  
STATIC CHARACTERISTICS

3.0
VCE = 1.0 V
2.0 VCE = 10 V
h FE, NORMALIZED CURRENT GAIN

TJ = 125C

1.0
25C
0.7

0.5 55C

0.3

0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

1.0

TJ = 25C
0.8

0.6
IC = 1.0 mA 10 mA 100 mA 500 mA

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.0 + 0.5
TJ = 25C
VBE(sat) @ IC/IB = 10
0.8 0 qVC for VCE(sat)
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)

0.5
0.6 VBE @ VCE = 10 V
1.0
0.4
1.5

0.2 VCE(sat) @ IC/IB = 10 2.0 qVB for VBE

0 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. On Voltages Figure 18. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data 5

 
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION XX J 0.015 0.020 0.39 0.50
V C K 0.500 12.70
L 0.250 6.35
N 0.080 0.105 2.04 2.66
1 N P 0.100 2.54
R 0.115 2.93
N V 0.135 3.43

STYLE 1:
CASE 02904 PIN 1. EMITTER
2. BASE
(TO226AA) 3. COLLECTOR
ISSUE AD

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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6 Motorola SmallSignal Transistors, FETs and Diodes Device Data


2N4400/D