EE311

Introduction to Semiconductor
Devices

L 11 : Doping (contd
L-11 (contd.))
&
M bilit
Mobility
B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

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B. Mazhari, IITK
Donor Freezeout

0.1
0
o/ND
D

NC N D E Ed
no exp( C )
0.01 2 2kT
no

1E-3

1E-4
0 5 10 15 20 25 30
1000/T

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Fermi Energy

E EF
EC no N C exp( C )
ED kT
EF
N
E F EC kT ln( C )
EV no

0
27 V
-27meV
-40
ED = -54meV
V)

-80
EF(meV

-120 ND = 1016
-160

-200

-240
0 50 100 150 200 250 300 350 400

B. Mazhari, IITK
T (K) 52
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P-Type Doping

EC

EF For boron : EA EV = 44meV

EA
EV

1
f (E) f (E) EF E
E EF exp( )
1 exp( ) 1 f (E) kT
kT

f (E) E E NF
exp( F )
1 f (E) kT NE

1
f (EA)
E EF NV E A EV
1 4exp( A ) NA exp( )
kT 40 kT 53
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Carrier density at higher temperatures

Si Si Si Si

no N D
+
Si A
As Si Si

2
g Neutralityy no N D po
Charge no po ni
2
n
no N D i
no
Eg High temp. limit : no ni
ni N C NV exp( ) 54
B. Mazhari, IITK 2kT G-Number
 no
N D : 1016 cm 3

~700K ~100K
ND

1000/T

For E g = 0.7eV, N D = 1015 cm 3 TH 372 K

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Degenerate / Non-degenerate semiconductors
E EF
no N C exp( C )
kT
EC
EF no dn( E ) gc ( E ) f ( E )dE
Ei E C

2meds 3 2
EV gc ( E ) 4 ( ) E Ec
2
h
1 E EF
f (E) exp( )
E EF kT
1 exp( )
kT

EC E F 2 meds kT 3 2
no N C exp( ) N C 2( )
kT 2
h

Non-degenerate semiconductor : EC EF > 3kT 56

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Degenerate semiconductor

EC

no gc ( E ) f ( E )dE
EF E C

Ei

2meds 3 2
gc ( E ) 4 ( ) E Ec
EV 2
h

2 NC E Ec
noe 1 exp( )d
0 F kT

(EC-EF)/kT -3 -2 -1 0 1 2

noe/NC 0.049 0.129 0.328 0.765 1.575 2.82

no/NC .05 0.135 0.368 1 2.718 7.39

(4.7%) 57
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 E EF
no N C exp( C )
kT
1
10
No/Nc
Nc

0
10
No/N

2 NC
noe 1 exp( )d
0 F

-1
10

-5 -4 -3 -2 -1 0 1 2 3 4 5
(E EC)/kT
(E-EC)/kT

For no 00.13
13 N C error < 5%
18 3
For
B. Mazhari, IITK Si : n ,
o op 1 10 cm is a good approx. 58
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 EE311

Introduction to Semiconductor
Devices

L-11 : Mobility

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

59
G-Number
B. Mazhari, IITK
Device Analysis
Semiconductor Equations
N D , N A 2 q
Poisson's Equation : ( p n N D N A )
x 2

n 1 J N
Electron continuity equation : GN RN
t q x
Boundary
GN , RN p 1 J P
Hole continuity equation : GP RP
t q x Condition
dn dp
J N qn N qDN ; J P qpP qDP
dx dx

N , DN n p
(n , );( p, ); ( )
x x x

Current vs. Voltage Characteristics

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Transport under collisions: a simple model

Electric field = 0

Average velocity = 0
In the presence of field,
field there is a net motion of electron in a direction opposite to
the field giving rise to a non-zero velocity termed as drift velocity

Average velocity in the

direction of field is non-zero

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Quantitative treatment

Assumptions:

1. Electron is free to move between collisions.

2
2. Collisions are instantaneous and momentum gained from field is completely
lost after collision
3. probability that an electron suffers a collision in time interval dt: dt /

is mean time between collisions

Let N(0) be the number of electrons that start at time t = 0

Suppose N(t) is number of electrons that have not suffered a collision till time t

t

t
dN (t )

N (t )
N (t ) N (0) e
N (t t ) N (t ) N (t )
dt
No. of electrons that undergo collision at t in time interval dt:
N (t )
dN (t ) dt

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 Mean free path
Average collision time:

1

1

N (t )
l vth
t
N (0) 0
tdN (t ) t
N (0) 0
dt

Drift Velocity

qE
v vth *
t qE qE
vd v * t *
m m m

acceleration q
vd E ;
m*
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Scattering

Sources:

1. Lattice or phonon scattering

2. Impurity Scattering

3. Source roughness induced scattering

4. Grain Boundary scattering

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Lattice scattering (simple picture

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 Impurity Scattering

-ve

+ve

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 Surface roughness scattering

Oxide

n+ n+

p-type
B

Surface potential
(or Ec)

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 Grain Boundaries

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