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A K
2. thyristor - (SCR) silicon controlled rectifier.
G
E C G
B B
4. bipolar transistor- (BJT).
D D
C E
A K
DIODE 5000 V, 10000A
K
THYRISTOR A phase controlled: 5000V, 5000A, tq=100ms
G fast: 2000V, 200A, tq=20ms
A K
GTO 4500V, 1000A
G 9000V, 9000A (modules)
E C
A K
Diode
Turns on if vAK becomes positive.
Equivalent Schematic of
Blocks if forward current IF becomes conducting diode
negative
Rj
Ideal Real Vj
IF IF PF=VFIF=VjIFav + RjIFef2
Operaing Limits:
1t
Average forward current value I F ( av ) iD dt
T0
t
1 2
RMS forward current value I F ( RMS )
T 0
iD dt
Dynamic Characteristic
trr inverse recover time;
Time interval between the current
inversion and the intersection of the
i mx tangent marked in the begining of the
current rise with the t axe.
t rr
Qrr inverse recover charge;
Removal of electric Charge in the
Q rr t junction during the ON-OFF transition
I RM
ta storage time;
ta Interval since the inversion of current
untilm it begans until to rise
exponentially
Turn-on
IF Charge of a capacitor
IF
Protection circuit to avoid
oscillations:
vAK t
Problems arrise when frequency
increases t
com RC
Diodes Classification
Schottky
Mx. Reverse Voltage
Cuttoff current
leakage
Recuperao rpida
Mx. tenso
de bloqueio
no corte
Corrente fuga
no corte
Tempo de
recuperao
Rectifiers
Thyristor A K
Half-controlled
SCR G
Starts conduction if vAK is positive and if a Control only in the turn on the ON
low duration current pulse exists at the transition +V - AK
zero. IAK G
iG
IF Transition OFF-ON
IF vGK = VGKT > 0, iG = iGT > 0
iG1>iG2>iG3 during a minimum time interval
blocks trigger iG1 > iG2 > iG3
VRRM Transio ON-OFF
VAK VAK VDRM
V voltage reverse
DRM
IAK < IH (holding current)
GATE Characteristics IG
Gate pulse
IH
Turn-off IT>IH
VAK
IAK G
iG
iA
tq turn of time
trr
t
vAK
t
RC snuber"
vA
K
Direct voltage must not be applied to the thyristor while tq, has not elapsed
Otherwise the thyristor mantaines conduction.
IST-DEEC Prof Beatriz Vieira Borges
POWER ELECTRONICS POWER ELECTRONICS DEVICES
L
v v
2p 2p
iT iT
v R t t
v R
di
iT iT
dt
t t
iG iG
Equivalent scheme with the thyristor cut-off , without protection against dvAK/dt.
RAK L di v
di
dt L
v R AKi L
v vAK dt VAK = RAKi
R=10W
dv AK di
RAK>>>R RAK=50KW
R AK
dt dt
dv AK Vmax
R AK
dt L
Snuber Design:
Equivalent scheme with the thyristor cut-off , with protection against dvAK/dt.
RS L
CS
A resistncia total medida aos terminais do tiristor
RAK fica diminuida quando se pe, em paralelo, a
v resistncia Rs. Assim para RS<<<RAK tem-se:
vAK R=10W
RS vmax
dv AK Vmax dv AK V L
RAK RS max dv AK
dt L dt L
dt max
50 x 220 x 2
L x106 52 H valor aceitvel
300
RS pode baixar mas ficar limitado pelo valor da corrente que percorre o circuito com o tiristor
bloqueado. CS=0,1mF valor tpico CS>>> Coff=1nF
A corrente que precorre o tiristor no corte aproximadamente 10mA ZC=32KW f=50Hz
ZC=1/wC
Supresso de transitrios
curva
I caracterstica
1KA de um varistor
-VS VS VDRM
FUS
Fusveis rpidos ou ultra rpidos
VCC 1:1
Triggering signal RC
1nF
BUFFER
RB
Autonomous Oscillator
enable
Classificao de Tiristores
Imx: 4 kA
Low speed rectifiers
Vmx: 5-7 kV
Thyristors (phase 1f, 3f, 50-60 Hz
Von: 1,5V (@1kV); 3V (@5-7kV)
Controlled)
47
68n
K 10m QUADRAC
GTO
Gate-turn-off Tiristor
GTO A
IA
I
G
Gate-Turn-Off Tiristor + VRWM
VGC
- K
VAK
OFF- ON Similar to the conventional SCR (1<VGT<2 V; IGT) but the gate current must be
mantained during all the conduction interval
ON-OFF
iG < 0A
Aplication of a negative VGC diG/dt ~ 30-100 A/ms
cerca de 30% de IA
-20V < VGC < -7V
A
iG = 200A High control
I
@ 1000 A, power!!!
10 ms
e G
+
VGC
IST-DEEC
- K
Protection
circuit
Difficult when inductive
circuits
A
I
solution G
+
VGC
- K
Transistor
de juno IC
IB3
bipolar
IB2
TJB IB1
VCEsat
E
E
higher VCEsat
desadvantages
slower switching
Transistor Metal
Oxide VGS3
VGS2
Semiconductor VGS1
MOSFET VDS
Operating limites :
VDS - Mxima tenso Dreno Fonte
VDG - Mxima tenso Dreno Gate
ID - Mxima corrente de Dreno Pcond=rDS(on)IDef2
VGS - Mxima tenso gateFonte
PD - Potncia Mxima dissipada
VDS
sem proteco
ID
VDS VDS
ID ID
t t
O diodo de substracto (diodo parasita) pode ser utilizado como diodo de roda livre (diodo
lento)
circuitos de comando:
D
D
Acopulador ptico Transfomador de impulsos
G
Alimentao G
e Lgica S V S
V
Foto acopulador
Transistor de C IC
G
gate isolada VGS2
IGBT E
VGS1
VCE
Comparao dos
(Mitsubishi)
Dispositivos
semicondutores
Capacidade em Velocidade
semicondutor potncia comutao
TBJ / MD mdia mdia
MOSFET baixa alta
GTO alta baixa
IGBT mdia mdia
Tiristor alta baixa
custo do semicondutor
Semicondutores em comutao
REAL
IDEAL
I0
+ vT -
ideal iT
Vd
Perdas totais
PT = Pon + Pc