JP CNFM Saint Malo 2012

Electronique haute frquence sur

substrat souple:
p les diffrentes
approches

Henri HAPPY
Introduction:Flexibleelectronic

Strategies forflexibleRFapplications
for flexible RF applications

Conclusion:IEMNRFflexibleproject

2
 Introduction: Flexible electronic

New market and new Flexible display E-papers

applications

Flexible photovoltaic panel

Flexible battery
 Introduction: Flexible electronic
Printed technology suitable for mass production
Increasing demand for
f lighter,
smaller electronics products

Roll to roll technique

Minhun, J. et al. IEEE Trans. On Electr. Deviices, 57(3): 571-580. (2010) Source: IDTechEx 2009
 Introduction: What about RF applications

Drawback of organic
pentacene
electronics: low mobility
P3HT 0.1 1 10 100 103 104 105

Carrier Mobility
() in cm2/V.s

Printable

Flexible
New materials for bendable and
MHz flexible applications from RF to HF
range (GHz
(GH range))
 Introduction: What about RF applications
pentacene
Carrier Mobility
() in cm2/V.s
P3HT 0.1 1 10 100 103 104 105

Conventional SC

Nano wires
Printable
Carbon
Ca bo materials
ate a s
Flexible

MHz Microelectronic technology

Printed technology
Hybrid technology
Introduction:Flexibleelectronic

Strategies forflexibleRFapplications
for flexible RF applications

Conclusion:IEMNRFflexibleproject

7
 Strategies for HF flexible circuits

Transfer bonding technique

Transfer-bonding
Frequency above 100 GHz with conventional microelectronic
technology and transfer process on flexible substrate

n-MOSFET on plastic
fT = 150GHz
fMAX = 160GHz
160GH

p-MOSFET on plastic
fT = 100GHz
fMAX = 130GHz
A. Lecavelier des Etangs-Levallois, et al., IEEE Electron Dev.
Lett.32, 1510
1510-1512
1512 (2011)

IEMN - STMicroelectronics
TED 2012 ( paratre)

10
 Frequency above 100 GHz with conventional microelectronic
technology associated to contact printing

MOSFET using g
ultra-thin 2D III-V
membrane

ft = 165 GHz
fmax = 44 GHz

MOSFET using ultra-

thin 2D III-V membrane
on polyimide

ft = 105 GHz
C. Wang et al.; Nano Lett. 2012 Aug 8;12(8):4140-5 (2012)
(Berkeley)
 Strategies for RF flexible circuits
Solution (ink) based material (NW, CNT, graphene)

CNT ink:

Balance
between mobilityy
and on/off ratio

ACS Nano, 2011, 5 (11), pp 84718487

 Mobilityy of CNT layer:
y 80 cm2V-1s-1

Measured (blue) and SPICE-simulated (red) dynamic

response of one output line under a square-wave
square wave input
pulse (black) at a clock frequency of 1 kHz.
Gi h t flexible
Gigahertz fl ibl CNT transistor
t i t
Solution-based
Solution based CNT

ft = 5 GHz

High degree of flexion

Radius curvature
3,3 mm

N. Chimot and al. - APL - , 91, 15 (2007) 153111-1-3 CEA LEM-IEMN

CVD graphene and flexible substrate

J. H. Ahn et al., nature nanotechnology, 2010, DOI: 10.1038/NNANO.2010.132

15
RF circuits on flexible substrate
RF circuits on flexible substrate
RF circuits on flexible substrate

200 nm

Pd

Y2Ox
 1000
IEMN

GHz) 100
IEMN-CEA
quency(G

10

1
Cutofffeq

SiMOS
0.1 CNT+Graphene
ThinfilmSi
0.01 ThinFilmIIIV
Organic
g
0.001
0.1 1 10 100
Diethickness(m)
( )
Introduction:Flexibleelectronic

Strategies forflexibleRFapplications
for flexible RF applications

Conclusion:IEMNRFflexibleproject

20
IEMN Flexible electronic project

12 research
groups involved:
Material engineering:
NAM6, Mitec, Epiphy,
Biomems

Device/circuits:
elec-Si, Puissance,
Anode, Carbon

Sensors & actuators:

Aiman, Biomems

Systems: Mamina

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E i
Equipex LEAF

21,5mm

14,7mm

Equipex
Excelsior

22
TPdlectroniquesursubstratsouple
Fabrication de circuits par impression
jet dencre sur substrats souples

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Merci pour votre
attention

Ple de Lille

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