Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BVcro and that with emitter open is BVcao, then (@ BVceo = BVcuo (b) BVcro > BV cao (©) BV ceo < BVcuo (@BVceo is not related to BVcao [GATE 1995] Soln, The given voltage ratings are reverse breakdown voltages. BVceo — Voltage between the collector and emitter with base open BVcuo - Voltage from collector to base with emitter open The mechanism involved for such breakdown is due to Avalanche, ‘The equation relating these breakdown is BY cao BV ceo = @in This shows that voltage in open base configuration is smaller by (eV Open emitter BVcro BV ceo Thus, BVcro Malis 4 since, eV bez/WVr > 1 eVber/Wr yy 4 Then eve2—Voer)/Vr — 2 or, (Vier — Vier) = Vr In2 Takingn =1 Vpez — Vbe1 = 1 X 0.026 x 0.693 =18mV =20mV Option (c) 4. Fora BJT circuit shown, assume that the ‘B’ of the transistor is very large and Vge = 0.7 V. The mode of operation of the BJT is 10Ka Ry + + lov 2V - 2 RS1Ko (a) Cut - off (©) Normal active (b) Saturation (d)Reverse active [GATE 2006] Soln. Given, Ver =0.7V Input junction (base emitter) junction is forward biased sinceWe should find the condition of output junction i, C-B junction Note, Vee =Vee+Vee Or, Vee =Vee— Veg To determine Vex we find Ic _ 2-Vpp _ 2-07 Ic = 1c = Ra 1KQ or, I¢ = 1.3mA Vee = Vec — Ic(Ri + Rz) = 10 — 1.3 mA (10K + 1K) Veg = —4.3V Veg = —4.3V—0.7 =-5V Thus, collector base junction is forward biased (since collector is ve with respect base) Thus, transistor is in saturation Option (b) 5. Group | lists four different semiconductor device. Match each device in Group I with its characteristics property in Group II Group-1 P. BIT Q MOS Capacitor R. LASER diode S. JFET Group- II 1. Population inversion Pinch — off Voltage Early Effect Flat— band Voltage a =Soln. Soln. P QRes @3 1 4 2 ()2 4 3 2 @3 4 1 2 @3 2 1 4 [GATE 2006] In BJT when base — collector bias voltage increases, then effective base width reduces, the gradient of minority carriers increases, this increases diffusion current. This is known as Early effect. In JEFT gate to source voltage applied to achieve pinch off is called pinch off voltage. In LASER population inversion occurs when concentration of electrons is one energy state is greater than that is lower energy state. This is called population inversion In MOS capacitor, flat band voltage is the gate voltage that must be applied to create flat band condition is which there is no space charge in semiconductor under oxis Thus, BJT - Early effect MOS capacitor Flat band voltage LASER diode - Population inversion SFET - Pinch off voltage Thus Option (c) is correct The DC current gain (B) of a BIT is 50. Assessing that, the emitter junction efficiency is 0.9995, the base transport factor is (a) 0.980 (©)0.990 (b)0.985 (40.995 [GATE 2007] Given, B=50Ina p-n-p transistor, collector current ic is proportional to hole component of the emitter current isp ig =Biigp ------@© Where B is called base transport factor Emitter injection efficiency (y) = —“#@— — — — (2) ienttep Where, igp — hole componet of emitter current ign — electron component due to electron injected from base to emitter Current gain a is related as @=By = --------- 6) Since transport factor (B) _ 6 _ 50 @= ba 5041 Base transport factor (B) = 2h ~ 517 0.995 = 0.985 Option (b) 7. Ina.uniformly doped BIT, assume that Nz, Ny and Ne are the emitter, base and collector doping in atoms / cm’ respectively. If the emitter injection efficiency of the BJT is close to unity which one of the following is true? (@) Np = Np = Ne (©) Ng = Np and Ng < Ne (b) Nz >> Np and Ng > Ne (Ng < Np < Ne [GATE 2010] Soln. Emitter injection efficiency (y) can be written in term of emitter, base doping concentrations.= Ne ~ Ng t+Ne 1 or, Y=—y 1+% Toget y=1, Ng>Np Thus, Option (b) 8, Fora BIT, the common — base current gain a ~ 0.98 and the collector base junction reverse bias saturation current Icg = 0.6 1A. This BIT is connected in the common emitter mode and operated in the active region with a base drive current Iz = 20 /A. The collector current Ic for this mode of operation is (@)0.98 mA (©) 1.0mA (b)0.99 mA (1.01 mA [GATE 2011] Soln. Given, a= 0.98 Ico = 0.6 pA Collector current I¢= Bly + (1+ Blco « 0.98 =49 Thus, I¢ = 49 X20 +50 x 0.6 = 980+30 = 1010nA Ic¢ = 1.01 mA Option (d)9. Consider two BIT’s biased at the same collector current with area Ay = 0.2 pm x 0.2 ym and Az = 300 pm x 300 um Assuming that all other device parameters are identical, kT/q = 26mV, the intrinsic carrier concentration is 1 x 10? cm and q = 1.6 x 107°C, the difference between the base — emitter voltage (in mV) of the two BIT’s (i. € Vse1 — Vee2) [GATE 2014] Soln. Note that collector through forward biased, emitter — base junction diode. It can be written as Ic = (Ip e¥##/1¥r — 1) Neglecting 1 in the equation Ic = Ip eV28/0Vr Te4 = Igy eV 881/147 Tez = Iz e¥ 882/1¥r Since, Ic, =I¢2 Tor eVeei/nVr — To2 eV ae2/nVr 102 gVpe1/1Vr - Vee2/nVr) To1 Voe1-Vorz _ yy, [| avr Jo1 fo2 or, Veer — Ver. = V7 In [2 or, =nV;In [| =1x0.026In(@") 02x02 Vae1 — Vee2 = 380.3 mV —s Answer 380.3 mV10. An npn BIT having reverse saturation current [s = 10-15 A is biased in the forward active region with Vig = 700 mV and the current gain (8) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in WA) is IGATE 2015] Soln. Given, I,=10°5 A Veg = 0.7 Vy =25 mV B range from 50 to 150 I¢ = Io eV 88/Vr B+1 Ir a I¢ — Att Vee/V3 Tp === 1, eV ae/Vr p Is Ix will be maximum when B is 50 = 1,02 x 10715 x @700x10-3/25x10-> Ig = 1475 pA ‘Answer: 1475 wA 11. The injected excess electron concentration profile in the base region of an npn BIT, biased in the active region, is linear, as shown in the figure. If the area of the emitter — base junction is 0.001 cm?, up, = 800 cm2/(V — s) in the base region and depletion layer widths are negligible, then the collector current Ic (in mA) at room temperature is __ (Given: thermal voltage Vp = 26mYV at room temperature, electronic charge q = 1.6 x 10°" C)tu n Pp n 10' cm™3} Excess electron \_ profile So —- N \ + I \ I le , c \ \ 0 \ ——————— 0.5 um [GATE 2016] Soin. Given, Emitter base junction area = 0.001 cm? Hn = 800 cm?/v —s di ‘The diffusion current crossing the unit area = qDy <" So, dn 1¢=AqQDn dn = Agr 7 D Since, — = V; ar d, -19 10'4—0 = 0.001 x 1.6 x-1x 800 x 0.026 x (22=*,) Ic = 6.656 mA. Answer:- I¢ = 6.656 mA