EE 644: Physics of Transistor

Assignment 6
Submitted by
B Abhishek
Q1.
Diode1: Nd=10e16, Na=10e16
Diode2: Nd=10e18, Na=10e16
Diode3: Nd=10e16, Na=10e18
Diode4: Nd=10e18, Na=10e18

Length of the diode: 1um

a. IV-Characteristics of all the diode:

From the plot, as the current is maximum for Nd=10e16, Na=10e16.

The reason for this is, due to less doping more carriers are injected.
Log plot of I-V characteristics depicting recombination and high level injection.

Electron current:
 Hole Current:

b. Electric Field across the diode variation with the voltage

At 0.7V:
At 0V:

At -2V:
c. Electro Static Potential Profile along the diode for various voltage biases
At 0.7V:

At 0V:
 At -2V:

d. Breakdown voltage:

Breakdown Voltages:

Diode1: -7.54V
Diode2: -20V
Diode3: -19.7V
Diode4: -33V
e. Which one is the best diode and why?
From the plot, as the current is maximum for Nd=10e16, Na=10e16, and also the breakdown
voltage of the diode is also more (can with stand greater reverse bias voltage).

f. Change the material to Ge, GaAs and plot I-V characteristic.

Current is compared for doping Nd=10e16, Na=10e16. The current is plotted for the same
doping. The current is very-small (10e-13~0) for GaAs. As injected carriers are (ni^2/Na^2) 10e-4
in this case. Therefore, the current is zero.

g. Change n and p (for Nd=10e16, Na=10e16 only)

Normal (n=10e-5s and p=3*10e-6s)

Reduced (n=10e-7s and p=3*10e-8s)
Increased (n=10e-3s and p=3*10e-4s)
Q2: PIN Diode

Length of diode: 1um.

PIN diode1: d=0.1um

PIN diode2: d=0.2um
PIN diode3: d=0.3um
PIN diode4: d=0.4um

The widths of the diode are aligned such that they are symmetrical on both sides along the
midpoint of the diode.
a. Electric Field At 0.6V

Electric Field At -2V

b. I-V plot
c. Breakdown voltage:

PIN diode1: -18V

PIN diode2: -20V
PIN diode3: -23V
PIN diode4: -25V