144

Problems

II Sample Problems
Chapter 1 Problems
Problem 1-1.

Problem 1-2.

Problem 1-3.

Problem 1-4.
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Chapter 2 Problems
Problem 2-1. Why do you think that although III-V and II-VI materials are often suitable as
semiconductors I-VII materials are not?

Problem 2-2. The measured values for the lattice constants of group IV materials are:

C = 0.357nm, Si = 0.543nm, Ge = ? nm, Sn = 0.649nm

a) Using the bandgap data given for these materials in Figure 2.12, estimate the lattice constant for Ge.
b) Is the relationship between spacing and bandgap what you expected? Expain.
146 Problems

Chapter 3 Problems
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Chapter 4 Problems

(atoms/cm2),
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Chapter 5 Problems
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Chapter 6 Problems
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Chapter 7 Problems
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Chapter 8 Problems
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Chapter 9 Problems
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Chapter 10 Problems
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Chapter 11 Problems
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Chapter 12 Problems
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Chapter 13 Problems
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Chapter 14 Problems
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Chapter 15 Problems
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Chapter 16 Problems
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Chapter 17 Problems
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Chapter 18 Problems
168 Problems
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Chapter 19 Problems
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Chapter 20 Problems
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Chapter 21 Problems
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Chapter 22 Problems
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Chapter 23 Problems
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Chapter 24 Problems
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Chapter 25 Problems
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Chapter 26 Problems
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Chapter 27 Problems
180 Problems

Chapter 28 Problems
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III Solutions to Sample Problems

Chapter 1 Solutions
Solution 1-1.

Solution 1-2.
182 Solutions

Solution 1-4.
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Chapter 2 Solutions
Solution 2-1. This solution requies a discussion of the type of bonding that occurs between group I and
group VII versus the other types.

Solution 2-2.

a) The lattice constant for Ge = 0.565nm (requires functional fitting and interpolation).

b) The fitted value should be close to the actual value and lie between the lattice constants for Si and
Sn.
184 Solutions

Chapter 3 Solutions
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Chapter 4 Solutions
186 Solutions

Chapter 5 Solutions
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188 Solutions

Chapter 6 Solutions
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190 Solutions

Chapter 7 Solutions
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192 Solutions

Chapter 8 Solutions
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194 Solutions

Chapter 9 Solutions
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196 Solutions

Chapter 10 Solutions
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198 Solutions

Chapter 11 Solutions

- - -
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200 Solutions

Chapter 12 Solutions
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202 Solutions

Chapter 13 Solutions
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204 Solutions
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Chapter 14 Solutions
206 Solutions

Chapter 15 Solutions
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Chapter 16 Solutions
208 Solutions
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Chapter 17 Solutions
210 Solutions
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212 Solutions

Chapter 18 Solutions
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214 Solutions

Chapter 19 Solutions
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216 Solutions

Chapter 20 Solutions
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Chapter 21 Solutions
218 Solutions

Chapter 22 Solutions
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Chapter 23 Solutions
220 Solutions
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Chapter 24 Solutions
222 Solutions

Chapter 25 Solutions
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224 Solutions

Chapter 26 Solutions
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226 Solutions

Chapter 27 Solutions
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228 Solutions

Chapter 28 Solutions
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IV Physical Constants and Material Properties

Quantity Symbol Value

Angstrom Unit 10-8 cm = 10-10 m

Boltzmanns Constant k 8.62x10-5 eV/K
1.381x10-23 J/K
Electronic Charge q 1.602x10-19 C
Electron Volt eV 1.602x10-19 J
Electron Rest Mass mo 9.11x10-31 kg
Free Space Permittivity o 8.854x10-14 F/cm
Planks Constant h 6.626x10-34 J-s
4.14x10-15 eV-s
Thermal Voltage at 300K 1 kT/q 0.0259 V

Properties of Silicon at 300K

Quantity Symbol Value

Intrinsic Carrier Concentration ni 1.45x1010 cm-3

Effective Densities of States Nv 1.08x1019 cm-3
Nc 2.8x1019 cm-3
Electron Affinity Si 4.05 eV
Energy Gap Eg 1.08 eV
Bulk Electron Mobility n 1350 cm2/V-s
Bulk Hole Mobility p 470 cm2/V-s
Surface Electron Mobility 520 cm2/V-s
Permittivity Si 11.7o

Properties of Silicon Dioxide

Quantity Symbol Value

Permittivity ox 3.9o
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V Laboratory Instructions

Lab Tutorial - HP4145 Parameter Analyzer

Experiment 1 - PN Junction Diode Parameter Extraction

Experiment 2 - Current Flow in the BJT

Experiment 3 - MOSFET Drain Current Modelling