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Digital logic families

Digital logic has evolved over the years and this process has led to the development of
a variety of families of digital logic integrated circuits. Each family has its own
advantages and limitations. This document describes the main logic families and their
characteristics. Among the technologies discussed here are DL, RTL, DTL, ECL, TTL,
CMOS and BiCMOS. All of these technologies were developed in the 1950s/1960s and
evolved over time. Some of these are still in use today.

Diode Logic (DL)

Diode Logic (DL) is the most primitive of all the digital logic families. It is extremely
simple and inexpensive because it only uses passive components. In fact, it combines
diodes and resistors so sometimes it is known as Diode-Resistor Logic (DRL).

Since DL does not use active components such as transistors, it does not provide
amplification and therefore inversion is not available. For this reason, DL only provides
AND and OR functions.

Lack of amplification leads to signal degradation. This is due to the fact there is a
voltage drop across diodes and to the fact that when diodes conduct, a voltage divider
develops with the inputs.

DL is an obsolete family, primarily due to its limitations in terms of inversion and


degradation.

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OFFTIME = 100nS VA D1
ONTIME = 100nS CLK 1 2
DELAY = 0
STARTVAL = 1 V
1N4376 V
OPPVAL = 0

OFFTIME = 200nS VB D2
ONTIME = 200nS CLK 1 2
DELAY = 0
STARTVAL = 1 V
1N4376
OPPVAL = 0

R1

1k

0
DL implementation of the OR function

5.0V

2.5V

0V
V(VA:1) V(VB:1)
5.0V

(250.000n,4.2321)
2.5V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(D2:K)
Time

Waveforms for the OR function

The circuit performs the correct logic but the voltage drop across the diode produces a
considerably lower high output voltage (4.2321V).

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V+ V+

V1
R1

5Vdc
1k

OFFTIME = 100nS VA D1 0
ONTIME = 100nS CLK 2 1
DELAY = 0
STARTVAL = 1 V V
OPPVAL = 0 1N4376

OFFTIME = 200nS VB D2
ONTIME = 200nS CLK 2 1
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 1N4376

DL implementation of the AND function

5.0V

2.5V

0V
V(VA:1) V(VB:1)

5.0V

2.5V
(150.000n,767.935m)

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(D1:A)
Time

Waveforms for the AND function

The circuit performs the correct logic but the voltage drop across the diode produces a
considerably higher low output voltage (767mV).

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Resistor-Transistor Logic (RTL)

Resistor-Transistor Logic (RTL) was invented around 1956. This type of technology,
unlike DL, uses active devices such as transistors and therefore can provide inversion.
The voltage range goes from 0V for low (0) to 3.5V for high (1). RTL is very inefficient
because it dissipates a great amount of power through heat.

RTL has two variants that attempt to improve some of its aspects:

1. When inputs are directly connected to the gate of the BJT, in order to save space
and reduce fabrication costs, RTL is known as
Direct-Coupled Transistor Logic (DCTL).

2. When capacitors are placed in parallel with input resistors, to speed up


operation, RTL is known as Resistor-Capacitor Transistor Logic (RCTL).

Fairchild Semiconductor introduced the first generation of RTL monolithic integrated


circuits in either 1962 or 1963. RTL is an obsolete digital logic family.

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0

V2

3.5Vdc

R1

640

R2 Q1
OFFTIME = 100nS VA V
ONTIME = 100nS CLK
DELAY = 0
STARTVAL = 1 V
470 40240
OPPVAL = 0

0
RTL implementation of the NOT function

5.0V

2.5V

0V
V(VA:1)
4.0V

2.0V

SEL>>
0V
0s 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns
V(R1:1)
Time

Waveforms for the NOT function

This circuit is nothing more than a common-emitter amplifier.

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V3

3.5Vdc

R1

OFFTIME = 100nS VA R3 640


ONTIME = 100nS CLK
DELAY = 0
STARTVAL = 1 470
V Q1
OPPVAL = 0 V

40240
OFFTIME = 200nS VB R4
ONTIME = 200nS CLK
DELAY = 0
STARTVAL = 1 V
470 R2
OPPVAL = 0
470

0
V4

-1Vdc

0
RTL implementation of the NOR function

The NOR function can be implemented by the circuit shown above which consists of
parallel inputs, a single BJT and two separate power supplies.

5.0V

2.5V

SEL>>
0V
V(VA:1) V(VB:1)
4.0V

2.0V

0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(Q1:c)
Time

Waveforms for the NOR function

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OFFTIME = 100nS VA
ONTIME = 100nS CLK 0
VA
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0
V3

OFFTIME = 200nS VB 3.5Vdc


ONTIME = 200nS CLK
VB
DELAY = 0
STARTVAL = 1 V
R1
OPPVAL = 0
640

Q1 Q2 V
R3 R4
VA VB
470 40240 470 40240

0
RTL implementation of the NOR function (AGC)

The NOR function can be implemented by the circuit shown above. Compared to the
previous, this one has only one power supply but it has one BJT per input. The inputs
are now isolated, an advantage over the previous circuit.

This solution has been used in 1962 for the Apollo Guidance Computer which, during
the Apollo Project, allowed astronauts to land on the Moon.

5.0V

2.5V

SEL>>
0V
V(VA:1) V(VB:1)
4.0V

2.0V

0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(R1:1)
Time

Waveforms for the NOR function

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0

V1

3.5Vdc

R3

640

R1 Q1
OFFTIME = 100nS VA
ONTIME = 100nS CLK
DELAY = 0
STARTVAL = 1 V
470 40240
OPPVAL = 0

R2 Q2
OFFTIME = 200nS VB
ONTIME = 200nS CLK
DELAY = 0
STARTVAL = 1 V
470 40240
OPPVAL = 0

0
RTL implementation of the NAND function

The NAND function is implemented by the circuit shown above which consists of two
parallel inputs, two stacked BJTs and a single power supply.

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5.0V

2.5V

0V
V(VA:1) V(VB:1)

5.0V (150.000n,3.9110)
(50.000n,3.5000) (250.000n,3.5000)

2.5V

(350.000n,155.671m)
SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(R3:1)
Time

Waveforms for the NAND function

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Diode-Transistor Logic (DTL)

Diode-Transistor Logic (DTL) was invented in the 1950s. It is a major improvement over
DL and RTL because it eliminates signal degradation and reduces power dissipation by
means of a transistor which restores digital values and a set of input diodes which
replace input resistors.

DTL has two variants that attempt to improve some of its aspects:

1. When a capacitor is placed in parallel with the base resistor and an inductor is
placed in series with the collector resistor, DTL is known as Complemented
Transistor Diode Logic (CTDL).

2. When a Zener diode and a single power supply are connected to the base of the
transistor, DTL is known as High-Threshold Logic (HTL).

Signetics introduced the first generation of DTL monolithic integrated circuits in 1962.

DTL was used in the IBM 1401 decimal computer that was delivered in 1959.

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0

V1

5Vdc

R2

R1
1k

4.7k

V
D1 D2 Q1
OFFTIME = 100nS VA
ONTIME = 100nS CLK
DELAY = 0
STARTVAL = 1 V
D1N3902 D1N3902 MPS706
OPPVAL = 0

0
DTL implementation of the NOT function

5.0V

2.5V

0V
V(VA:1)

5.0V

2.5V

SEL>>
0V
0s 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns
V(R2:1)
Time

Waveforms for the NOT function

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0

V1

5Vdc

R2

4k

OFFTIME = 100nS VA D1
ONTIME = 100nS CLK
DELAY = 0 V
STARTVAL = 1 D1N3902
V Q1
OPPVAL = 0 R3

2k MPS706
OFFTIME = 200nS VB D2
ONTIME = 200nS CLK
DELAY = 0
STARTVAL = 1 V
D1N3902
OPPVAL = 0

R1
0

2k

0
DTL implementation of the NOR function (I)

The NOR function can be implemented by the circuit shown above. R3 is in the circuit to
limit excess current from entering the base of the transistor but slows down the
switching of the circuit. For this reason the NAND circuit is faster than this NOR circuit.

5.0V

2.5V

SEL>>
0V
V(VA:1) V(VB:1)

5.0V

2.5V

0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(Q1:c)
Time

Waveforms for the NOR function

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0
0 0

V2

V1 V3
5Vdc

5Vdc 5Vdc

R2

1k
R1 R3

4.7k V
4.7k

Q2
Q1 VB
OFFTIME = 100nS VA D1 D2 MPS706 D3 D4 OFFTIME = 200nS
ONTIME = 100nS CLK CLK
ONTIME = 200nS
DELAY = 0 DELAY = 0
STARTVAL = 1 V
D1N3902 D1N3902 MPS706 D1N3902 D1N3902 V
STARTVAL = 1
OPPVAL = 0 OPPVAL = 0

0 0

DTL implementation of the NOR function (II)

The NOR function can also be implemented by the circuit shown above. Essentially, this
solution is a combination of two inverters. The one on the left is the mirror image of the
one of the right. R2 is the common collector resistor. This NOR circuit is faster than the
previous one.

5.0V

2.5V

0V
V(VA:1) V(VB:1)

5.0V

2.5V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(Q2:c)
Time

Waveforms for the NOR function

By comparing the waveforms for the two NOR circuits, it should be clear that the
transition from 00 to 01 is much faster in the second NOR implementation. Eliminating
the base resistor speeds up the circuit considerably.

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0

V1

5Vdc

R2
R1
1k
4.7k

OFFTIME = 100nS VA D2
ONTIME = 100nS CLK
DELAY = 0 V
STARTVAL = 1 D1N3902
V Q1
OPPVAL = 0 D1

D1N3902 MPS706
OFFTIME = 200nS VB D3
ONTIME = 200nS CLK
DELAY = 0
STARTVAL = 1 V
D1N3902
OPPVAL = 0

0
DTL implementation of the NAND function

The NAND function is implemented by the circuit shown above. D1 avoids the situation
where one of the inputs is 0 and a sufficient voltage builds at the base of the transistor
to turn in into conduction.

5.0V

2.5V

0V
V(VA:1) V(VB:1)

5.0V

2.5V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(R2:1)
Time

Waveforms for the NAND function

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Emitter-Coupled Logic (ECL)

Emittler-Coupled Logic (ECL) was invented in 1956 by Hannon S. Yourke at IBM. By


using a differential amplifier, along with a specific range of input voltages, it is possible
to overdrive BJTs so they never enter the saturation region. This type of situation allows
extremely high speeds because overdriving avoids the diffusion time that affects the
transistor when it transitions from the saturation region to the active region. ECL is fast
but it requires a substantial amount of power which in turn produces high heat
dissipation. In ECL technology, input impedance is high and output impedance is low.
ECL uses only NPN transistors.

ECL was originally known as Current-Steering Logic (CSL) because current can be
steered to one side of the differential amplifier while the other side is practically shut off
(typical feature of differential amplifiers). ECL is also known as Current-Mode Logic
(CML) or Current-Switch Emitter-Follower logic (CSEF).

When MOSFETs replace BJTs, ECL technology is know as


Source-Coupled FET Logic (SCFL).

Motorola introduced the first generation of ECL monolithic integrated circuits in 1962
and called it MECL I. Since then, ECL has been on the market and it’s still used today.

VCC

Output
Input
R1 R2 R3

220 245 Q5
907

PN2222
A+B

Q6 V

Q4 PN2222
-(A+B)

Q1 Q2 Q3 PN2222 V
R9
1k
D1
PN2222 PN2222 PN2222
D1N4003

R10
D2 VEE 1k

D1N4003
V V
R4 R5 R7
R6 R8 VEE

50k 50k 6.1k


779 4.98k
V1 = -0.8V VA
V2 = -1.70V VEE VCC
TD = 0 V1 = -0.8V VB
TR = 0 V2 = -1.70V VEE VCC
TF = 0 TD = 0 Compensation -5.2Vdc
PW = 2us TR = 0 VEE
PER = 4us TF = 0 0Vdc
PW = 4us
PER = 8us 0 0
0
0

Circuit schematic for the MECL 10K by Motorola

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The circuit shown on the previous page can be divided into three sections: input,
compensation and output.

The input section has two inputs that are placed in parallel (VA and VB). The input range
has an excursion of less than 1 V. It varies between –1.75V and
–1.6V for a low signal (0) and between –0.9V and –0.75V for a high signal (1).
The core of the circuit is the differential amplifier formed by Q1, Q2 and Q3. With a 0 or a
1 at the input, as previously explained, the differential amplifier is overdriven. One side
is on and the other is off (one transistor draws all the current and starves the other
transistor). The active side (Q1, Q2 or Q3) acts as a common-emitter stage with emitter
degeneration which provides feedback and therefore additional stability.
R6 acts as a current source that sinks the current from the active branch of the
differential amplifier.

The compensation section, formed by Q4, R7, R3, D1, D2 and R8, provides temperature
and voltage compensation. Essentially, it interfaces input and output stages and locks
the circuit in the desired voltage/current range.

The output section is formed by Q5 and Q6.

The upper power supply VCC is set to 0V. This is done to avoid variations in voltage from
VCC (making it a ground is to set a stable point for the circuit). The lower power supply
VEE is –5.2V.
ECL can only provide the OR and NOR functions.
-0.5V

-1.0V
(5.0000u,-800.000m)

(1.0000u,-1.7000)
-1.5V

SEL>>
-2.0V
V(Q1:b) V(Q2:b)
-0.5V

-1.0V (5.2000u,-698.580m)

(1.0000u,-1.6965)
-1.5V

-2.0V
0s 1.0us 2.0us 3.0us 4.0us 5.0us 6.0us 7.0us 8.0us
V(Q5:e) V(Q6:e)
Time

Waveforms for the OR/NOR functions

ECL has two variants that attempt to improve some of its aspects:

1. When VCC=5V and VEE=0V, ECL is known as Positive Emitter-Coupled Logic


(PECL). For both inputs and outputs, low logic (0) corresponds to 3.4V and high
logic (1) corresponds to 4.2V.
2. When VCC is reduced to 3.3V, in order to reduce power, ECL is known as Low-
Voltage Positive Emitter-Coupled Logic (LVPECL). For output voltages, low logic
(0) corresponds to 1.6V and high logic (1) corresponds to 2.4V.

ECL was used in the IBM 7030 “Stretch” supercomputer that was delivered in 1961.

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Transistor-Transistor Logic (TTL)

Transistor-Transistor Logic (TTL) was invented in 1961 by James L. Buie at TRW. In an


attempt to reduce the space utilized on a chip, TTL replaced DTL’s diodes with multiple-
emitter transistors. The result was a higher level of integration. TTL is also faster than
DTL because it discharges the BE junction of the output transistor more quickly.

Standard TTL chips works with a 5V power supply. For the inputs, the low logic signal
(0) should be between 0V and 0.8V and the high logic signal (1) should be between 2V
and 5V. For the outputs, the low logic signal (0) stays between 0V and 0.5V the high
logic signal (1) corresponds to values between 2.7V and 5V.

TTL input and output

Sylvania introduced the first generation of TTL monolithic integrated circuits in 1963.
Since then, TTL has evolved and newer generations have been designed to speed up
the technology as well as to reduce power consumption.

From 1964 to 2004, different generations of TTL technologies have been invented: L
(low-power) and H (high-speed) came in 1964, S (Schottky) in 1969, LS (low-power
Schottky) and ALS (advanced low-power Schottky) in 1976?, F (fast) in 1979, AS
(advanced Schottky) in 1980? and G in 20041.

TTL has been on the market for a long time. It was assigned the 5400, 6400 and 7400
codes. Texas Instruments invented the 5400 line for military applications. The 7400
family was designed for the regular market and became very popular, particularly in the
70s and the 80s, at least until the advent of Very-Large Scale Integrated (VLSI) circuits.
The 6400 series did not have a great success and it was a transitional series between
5400 and 7400 in terms of temperature ranges.

1
According to Wikipedia, ALS was born either in 1976, 1980 or 1985 and AS was born either in 1980 or
1985.

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0

V2

5Vdc

R2
R1
4.7k
1k

MPSW43
Q1 V
OFFTIME = 100nS VA
ONTIME = 100nS CLK
DELAY = 0
Q2
STARTVAL = 1 V
MPSW43
OPPVAL = 0

0
TTL implementation of the NOT function

The NOT function is implemented by the circuit shown above.

This circuit is very similar to its DTL counterpart. Notice that the two diodes are replaced
by an NPN transistor in the np/pn sequence.

5.0V

2.5V

SEL>>
0V
V(VA:1)
5.0V

2.5V

0V
0s 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns
V(R2:1)
Time

Waveforms for the NOT function

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0
0 0

V2

V1 V3
5Vdc

5Vdc 5Vdc

R2

1k
R1 R3

4.7k V
4.7k

Q3 Q1 Q2 Q4
OFFTIME = 100nS VA VB OFFTIME = 200nS
ONTIME = 100nS CLK CLK
ONTIME = 200nS
DELAY = 0 DELAY = 0
STARTVAL = 1 V
MPS706 MPS706 MPS706 MPS706 V
STARTVAL = 1
OPPVAL = 0 OPPVAL = 0

0 0

TTL implementation of the NOR function

The NOR function is implemented by the circuit shown above.

This circuit is very similar to its DTL counterpart (diodes are replaced by transistors).

5.0V

2.5V

0V
V(VA:1) V(Q4:e)

5.0V

2.5V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(R2:1)
Time

Waveforms for the NOR function

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0

V3

5Vdc

R4
R2

130
R1 1.6k

4k Q4
MPS706

Q1 Q3 D1
OFFTIME = 100nS VA
ONTIME = 100nS CLK MR504
DELAY = 0
STARTVAL = 1 V
MPS706 MPS706
OPPVAL = 0
Q2 V
OFFTIME = 200nS VB Q5
ONTIME = 200nS CLK
DELAY = 0 MPS706
STARTVAL = 1 V
MPS706 R3
OPPVAL = 0

1k

0
0

TTL implementation of the NAND function

The NAND function is implemented by the circuit shown above.

When the output of the circuit goes to logic 1, the chip offers high resistance at the
collector of Q3 and this is undesirable because this situation lowers the fanout (the
ability to connect many gates at the output without overloading the circuit). To overcome
this deficiency, the totem-pole was invented. Although the solution is not optimal, the
output is not symmetrical, it is a reasonable way to go about the high resistance
problem.

The totem-pole consists of a few additional components: 2 resistors (R3 and R4), 2
transistors (Q4 and Q5) and a diode (D1). The totem-pole is added to the right of what
looks like a two-input inverter and it helps to overcome the high output resistance
previously mentioned.

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5.0V

2.5V

0V
V(VA:1) V(VB:1)

5.0V

2.5V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(D1:2)
Time

Waveforms for the NAND function

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Complementary Metal-Oxide Semiconductor (CMOS)

Complementary Metal-Oxide Semiconductor (CMOS) was invented in 1963 by Frank


Wanlass at Fairchild semiconductor. This type of technology introduced a new design
approach that completely revolutionized the electronics industry: n and p transistors are
dual to each other and that they can be combined to provide logic by reducing power
consumption (as opposed to previous technologies where only one type of transistor
was used).

When compared to older technologies, CMOS drastically reduces power consumption


and heat dissipation. CMOS, in fact, consumes power only during changes between
logic states, thus only when both transistors are simultaneously active and conduct
current. Power dissipated is a function of four variables and it’s described by

P=αCV2f

where α is the so-called activity factor, C is capacitance, V is voltage and f is frequency


(the activity factor is a number between 0 and 1 that describes how busy is a CMOS
device).

CMOS technology became the leading technology for VLSI circuits because it could be
highly integrated. As a result, microprocessors and microcontrollers are now made of
CMOS devices.

CMOS devices have speed limitations due to internal capacitance which slows down
their operation.

CMOS is sensitive to electrostatic discharge or ESD so when handling CMOS devices,


additional care needs to be used to avoid damage.

CMOS can operate at different power supply voltages ranging from 3V to 15V. Just like
TTL, which became popular with the 7400 family, CMOS has become famous with the
4000 family.

RCA introduced the first generation of CMOS monolithic integrated circuits either in
1968 or in 1970.

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Static circuits

Static circuits do not use any external clock.

V1

5Vdc

M2

IRFP9141
OFFTIME = 100nS VA
ONTIME = 100nS CLK
DELAY = 0
STARTVAL = 1 V V
OPPVAL = 0 M1

IRFP253

Static CMOS implementation of the NOT function

The NOT function is implemented by the circuit shown above. This circuit shows the
symmetry and the duality of CMOS technology. The two transistors are complementary
and they are mirror images of each other.

5.0V

4.0V

2.0V

0V
0s 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns
V(VA:1) V(M1:d)
Time

Waveforms for the NOT function

The transistors are modeled with the following parameters:

Wp=100µ, Lp=2µ, Vtpo=-0.7V, Cbdp=2.293pF, Cgspo=818.1pF, Cgdpo=511.3pF


Wn=100µ, Ln=2µ, Vtno=+0.7V, Cbdn=4.368pF, Cgsno=1.329pF, Cgdno=496pF

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V1

5Vdc
OFFTIME = 100nS VA
ONTIME = 100nS CLK
VA
DELAY = 0
M3 STARTVAL = 1 V
OPPVAL = 0
VA
OFFTIME = 200nS VB
ONTIME = 200nS CLK
VB
IRFP9141 DELAY = 0
STARTVAL = 1 V
OPPVAL = 0

M4

VB

IRFP9141

V
M1 M2

VA VB

IRFP253 IRFP253

Static CMOS implementation of the NOR function

The NOR function is implemented by the circuit shown above. This circuit shows the
duality of CMOS technology. N transistors are complementary to P transistors (N in
parallel and P in series). For static CMOS circuits, for n NMOS transistors, there is an
equal number of PMOS transistors.

5.0V

2.5V

0V
V(VA) V(VB)
5.0V

2.5V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(M1:d)
Time

Waveforms for the NOR function

The transistors are modeled with the following parameters:

Wp=100µ, Lp=2µ, Vtpo=-0.7V, Cbdp=2.293pF, Cgspo=818.1pF, Cgdpo=511.3pF


Wn=100µ, Ln=2µ, Vtno=+0.7V, Cbdn=4.368pF, Cgsno=1.329pF, Cgdno=496pF

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0

V1

5Vdc

M3 M4

VA VB

IRFP9141 IRFP9141

V
M1

VA

IRFP253 OFFTIME = 100nS VA


ONTIME = 100nS CLK
VA
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0

M2 OFFTIME = 200nS VB
ONTIME = 200nS CLK
VB
DELAY = 0
VB
STARTVAL = 1 V
OPPVAL = 0
IRFP253

Static CMOS implementation of the NAND function

The NAND function is implemented by the circuit shown above. This circuit shows the
duality of CMOS technology. N transistors are complementary to P transistors (N in
series and P in parallel). For static CMOS circuits, for n NMOS transistors, there is an
equal number of PMOS transistors.

5.0V

2.5V

0V
V(VA) V(VB)
5.0V

2.5V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(M4:d)
Time

Waveforms for the NAND function

The transistors are modeled with the following parameters:

Wp=100µ, Lp=2µ, Vtpo=-0.7V, Cbdp=2.293pF, Cgspo=818.1pF, Cgdpo=511.3pF


Wn=100µ, Ln=2µ, Vtno=+0.7V, Cbdn=4.368pF, Cgsno=1.329pF, Cgdno=496pF

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Complementary Pass-Transistor Logic (CPL) is a CMOS subclass that uses NMOS
transistors to provide the logic. It’s generally faster than standard CMOS circuits
because eliminating PMOS transistors leads to a reduction in capacitance within the
circuit. CPL needs complements of all inputs and provides complements of the
implemented functions.
V+

OFFTIME = 100nS DSTM1


ONTIME = 100nS CLK
VA1 VB0
DELAY = 0
STARTVAL = 1 V
M3
OPPVAL = 0 U1A M1 M2N6659

1 2
VA0 VA1
M2N6845

74F04

OFFTIME = 200nS DSTM2 U3A


ONTIME = 200nS CLK
VB1
DELAY = 0 1 2
VB1
STARTVAL = 1 V
OPPVAL = 0 U2A
V NOR
M2 M2N6659
1 2 74F04
VB0
VB1

74F04 V+

VB0
M6
V+ M4 M2N6659

VA0
M2N6845
V1

3.3Vdc U4A

1 2
VB0

0 V OR
M5 M2N6659
74F04
VB1

CPL implementation of NOR/OR functions

5.0V

2.5V

SEL>>
0V
V(VA1) V(VB1)
4.0V

2.0V

0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(M3:g) V(M6:g)
Time

Waveforms for the NOR/OR functions

The transistors are modeled with the following parameters:

Wp=2µ, Lp=100n, Vtpo=-0.3V, Cbdp=899.2fF, Cgspo=2.288fF, Cgdpo=138.5fF


Wn=100m, Ln=100n, Vtno=+0.3V, Cbdn=118fF, Cgsno=1.885fF, Cgdno=7.564fF

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Cascode Voltage Switch Logic (CVSL) is a CMOS subclass that uses NMOS
transistors to provide the logic. It’s generally faster than standard CMOS circuits
because eliminating PMOS transistors leads to a reduction in capacitance within the
circuit. CVSL needs complements of all inputs and provides complements of the
implemented functions.

0 0

V1 V2

3.3Vdc 3.3Vdc

OFFTIME = 100nS DSTM1 M5 M6


ONTIME = 100nS CLK
VA1
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 U1A
IRFF9110 IRFF9110
1 2
VA0
NOR OR

74F04
V V
OFFTIME = 200nS DSTM2
ONTIME = 200nS CLK
VB1
DELAY = 0 M3
STARTVAL = 1 V
OPPVAL = 0 U2A
VA0
1 2
VB0
IRFF110
M1 M2

74F04
VA1 VB1
M4

IRFF110 IRFF110
VB0

IRFF110

0 0

Static CVSL implementation of NOR/OR functions

5.0V

2.5V

0V
V(VA1) V(VB1)
4.0V

2.0V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(M6:d) V(M2:d)
Time

Waveforms for the NOR/OR functions

The transistors are modeled with the following parameters:

Wp=10µ, Lp=1µ, Vtpo=-0.5V, Cbdp=324.9fF, Cgspo=2.397fF, Cgdpo=306.4fF


Wn=1m, Ln=1µ, Vtno=+0.5V, Cbdn=377.8fF, Cgsno=739.4fF, Cgdno=82.14fF

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0 0

V1 V2

3.3Vdc 3.3Vdc

OFFTIME = 100nS DSTM1 M5 M6


ONTIME = 100nS CLK
VA1
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 U1A
IRFF9110 IRFF9110
1 2
VA0
NOR AND

74F04
V V
OFFTIME = 200nS DSTM2
ONTIME = 200nS CLK
VB1
DELAY = 0
STARTVAL = 1 V
M1
OPPVAL = 0 U2A
VA1
1 2
VB0
M3 M4
IRFF110
VA0 VB0
74F04

M2 IRFF110 IRFF110

VB1

IRFF110

0 0

Static CVSL implementation of NAND/AND functions

5.0V

2.5V

0V
V(VA1) V(VB1)
4.0V

2.0V

SEL>>
0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(M4:d) V(M5:d)
Time

Waveforms for the NAND/AND functions

The transistors are modeled with the following parameters:

Wp=10µ, Lp=1µ, Vtpo=-0.5V, Cbdp=324.9fF, Cgspo=2.397fF, Cgdpo=306.4fF


Wn=1m, Ln=1µ, Vtno=+0.5V, Cbdn=377.8fF, Cgsno=739.4fF, Cgdno=82.14fF

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Dynamic circuits

Dynamic circuits use external clocks.


V+

OFFTIME = 200nS DSTM1


ONTIME = 200nS CLK
VA1 VB0
DELAY = 0
STARTVAL = 1 V
pr0A pr0B
OPPVAL = 0 U1A M1 M2N6659

1 2 CLK
VA0 VA1
M2N6845 M2N6845

74F04

OFFTIME = 400nS DSTM2 U3A


ONTIME = 400nS CLK eV1A M2N6659
VB1
DELAY = 0 1 2
VB1
STARTVAL = 1 V
OPPVAL = 0 U2A CLK V NOR
M2 M2N6659
1 2 74F04
VB0
VB1

74F04 V+

OFFTIME = 100nS CLK


ONTIME = 100nS CLK
CLK
DELAY = 0
STARTVAL = 1 VB0
V
OPPVAL = 0 pr0C pr0D
M3 M2N6659

CLK
VA0
V+ M2N6845 M2N6845

U4A
V1 eV1B M2N6659
1 2
VB0
3.3Vdc CLK V OR
M4 M2N6659
74F04
VB1
0

Dynamic CPL implementation of the NOR/OR function

5.0V

2.5V

0V
V(VA1) V(VB1)
5.0V

2.5V

SEL>>
0V
0s 100ns 200ns 300ns 400ns 500ns 600ns 700ns 800ns
V(U3A:Y) V(U4A:Y) V(CLK)
Time

Waveforms for the NOR/OR functions

The transistors are modeled with the following parameters:

Wp=2µ, Lp=100n, Vtpo=-0.3V, Cbdp=899.2fF, Cgspo=2.288fF, Cgdpo=138.5fF


Wn=100m, Ln=100n, Vtno=+0.3V, Cbdn=118fF, Cgsno=1.885fF, Cgdno=7.564fF

The PMOS transistor (pr0B) is called the weak-keeper. It is small in size and it helps to
avoid output voltage degradation.

32 www.ice77.net
0 0

V1 V2

3.3Vdc 3.3Vdc
CLK

OFFTIME = 200nS DSTM1 M5 M6


ONTIME = 200nS CLK pr0
VA1
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 U1A
IRFF9110 IRFF9110
1 2
VA0
NOR OR

74F04
V V
OFFTIME = 400nS DSTM2 M3
ONTIME = 400nS CLK
VB1
DELAY = 0
VA0
STARTVAL = 1 V
OPPVAL = 0 U2A
M1 M2 IRFF110
1 2
VB0
VA1 VB1
M4
74F04 IRFF110 IRFF110
VB0

IRFF110
OFFTIME = 100nS CLK
ONTIME = 100nS CLK
CLK
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 eV1

CLK

IRFF110

Dynamic CVSL implementation of NOR/OR functions

5.0V

2.5V

SEL>>
0V
V(VA1) V(VB1)
5.0V

2.5V

0V
0s 100ns 200ns 300ns 400ns 500ns 600ns 700ns 800ns
V(CLK) V(M3:d) V(M2:d)
Time

Waveforms for the NOR/OR functions

The transistors are modeled with the following parameters:

Wp=500µ, Lp=100n, Vtpo=-0.5V, Cbdp=324.9pF, Cgspo=2.397pF, Cgdpo=306.4pF


Wn=1m, Ln=1µ, Vtno=+0.5V, Cbdn=377.8fF, Cgsno=739.4fF, Cgdno=82.14pF

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0 0

V1 V2

3.3Vdc 3.3Vdc
CLK

OFFTIME = 200nS DSTM1 M5 M6


ONTIME = 200nS CLK pr0
VA1
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 U1A
IRFF9110 IRFF9110
1 2
VA0
NAND AND

74F04
V V
OFFTIME = 400nS DSTM2
ONTIME = 400nS CLK M1
VB1
DELAY = 0
STARTVAL = 1 V
U2A VA1
OPPVAL = 0
M3 M4
1 2 IRFF110
VB0
VA0 VB0
M2
74F04 IRFF110 IRFF110
VB1

IRFF110
OFFTIME = 100nS CLK
ONTIME = 100nS CLK
CLK
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 eV1

CLK

IRFF110

Dynamic CVSL implementation of NAND/AND functions

5.0V

2.5V

SEL>>
0V
V(VA1) V(VB1)
5.0V

2.5V

0V
0s 100ns 200ns 300ns 400ns 500ns 600ns 700ns 800ns
V(CLK) V(M3:d) V(M5:d)
Time

Waveforms for the NAND/AND functions

The transistors are modeled with the following parameters:

Wp=500µ, Lp=100n, Vtpo=-0.5V, Cbdp=324.9pF, Cgspo=2.397pF, Cgdpo=306.4pF


Wn=1m, Ln=1µ, Vtno=+0.5V, Cbdn=377.8fF, Cgsno=739.4fF, Cgdno=82.14pF

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Domino Logic is a CMOS subclass that uses NMOS transistors to provide the logic. It’s
generally faster than standard CMOS circuits because eliminating PMOS transistors
leads to a reduction in capacitance within the circuit. When the clocks is 0 (precharge
phase), pr0 charges the node below it to 1. When the clock is 1 (evaluation phase),
NMOS transistors provide the logic to the output. The clock signal can also be split and
two separate clocks can be supplied to the circuit. Sometimes, these two signals
overlap. Domino does not need complements of all inputs.

V1

3.3Vdc

wk
pr0 IRFU9010

OFFTIME = 200nS VA
ONTIME = 200nS CLK
VA
DELAY = 0
STARTVAL = 1 V
IRFP9141
OPPVAL = 0
U1A
OFFTIME = 400nS VB
ONTIME = 400nS CLK 1 2
VB
DELAY = 0
STARTVAL = 1 V
74F04 V
OPPVAL = 0 M1 M2

CLK VA VB

IRFP253 IRFP253

OFFTIME = 100nS CLK


ONTIME = 100nS CLK
CLK
DELAY = 0 eV1
STARTVAL = 1 V
OPPVAL = 0

IRFP253

Domino implementation of the OR function

5.0V

2.5V

SEL>>
0V
V(VA) V(VB)
5.0V

2.5V

0V
0s 100ns 200ns 300ns 400ns 500ns 600ns 700ns 800ns
V(CLK) V(U1A:Y)
Time

Waveforms for the OR function

The transistors are modeled with the following parameters:

Wp=1m, Lp=1µ, Vtpo=-0.3V, Cbdp=2.293fF, Cgspo=818.1fF, Cgdpo=5.113fF


Wn=1m, Ln=1µ, Vtno=+0.3V, Cbdn=4.368fF, Cgsno=1.329fF, Cgdno=4.96fF

PMOS transistor IRFU9010 acts as a weak-keeper. It is small in size (1/10 of NMOS)


and it helps to avoid output voltage degradation.

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0

V1

3.3Vdc

pr0 wk

OFFTIME = 200nS VA
ONTIME = 200nS CLK
VA
DELAY = 0 IRFP9141 IRFF9233
STARTVAL = 1 U1A
V
OPPVAL = 0
1 2
OFFTIME = 400nS VB
ONTIME = 400nS CLK M2 74F04 V
VB
DELAY = 0
STARTVAL = 1 V VB
OPPVAL = 0

IRFP253

CLK

M1

OFFTIME = 100nS CLK


VA
ONTIME = 100nS CLK
CLK
DELAY = 0
STARTVAL = 1 V
IRFP253
OPPVAL = 0

eV1

IRFP253

Dynamic CMOS implementation of the AND function

5.0V

2.5V

0V
V(VA) V(VB)
5.0V

2.5V

SEL>>
0V
0s 100ns 200ns 300ns 400ns 500ns 600ns 700ns 800ns
V(CLK) V(U1A:Y)
Time

Waveforms for the AND function

The transistors are modeled with the following parameters:

Wp=1m, Lp=1µ, Vtpo=-0.3V, Cbdp=2.293fF, Cgspo=818.1fF, Cgdpo=5.113fF


Wn=1m, Ln=1µ, Vtno=+0.3V, Cbdn=4.368fF, Cgsno=1.329fF, Cgdno=4.96fF

PMOS transistor IRFF9233 acts as a weak-keeper. It is small in size (1/10 of NMOS)


and it helps to avoid output voltage degradation.

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Bipolar-CMOS (BiCMOS)

Bipolar-CMOS (BiCMOS) was invented in 1969. This type of technology is hybrid in


nature because it combines bipolar transistors (BJTs) to field effect transistors
(MOSFETs) in order to combine the advantages of both devices.

The BJT has low output resistance, high switching speed and high voltage gain. The
MOSFET exhibits high input impedance and low power consumption.

BiCMOS has also some disadvantages that prevent this type of technology from
becoming popular. Since BJTs are much bigger than CMOS circuits, it is virtually
impossible to fabricate integrated circuits at competitive prices because their fabrication
would require additional steps and therefore additional costs. BiCMOS has also higher
power consumption than CMOS so BiCMOS is not particularly appealing when saving
energy is an issue.

The circuit can be divided in two stages: the input stage consists of CMOS transistors
whereas the output stage is made by BJT transistors.

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VCC VCC

M4
OFFTIME = 100nS DSTM1
ONTIME = 100nS CLK
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 IRFP9140
Q1

Q2N4141
M1

IRFP462

VCC
V
M2

V1

5Vdc IRFP462
Q2

0 M3 Q2N4141

IRFP462

0 0

BiCMOS implementation of the NOT function


6.0V

(45.000n,4.5129)

4.0V

2.0V

(150.000n,-265.399m)
0V

-2.0V
0s 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns
V(DSTM1:1) V(M2:d)
Time

Waveforms for the NOT function

The transistors are modeled with the following parameters:

Wp=1µ, Lp=45n, Vtpo=-0.5V, Cbdp=2.293fF, Cgspo=1.038pF, Cgdpo=291.9fF


Wn=1µ, Ln=45n, Vtno=+0.5V, Cbdn=5.156fF, Cgsno=1.947pF, Cgdno=135.8fF

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VCC VCC

M6

IRFP9140

M7

OFFTIME = 100nS DSTM1


VA
ONTIME = 100nS CLK
VA
DELAY = 0
STARTVAL = 1 IRFP9140
V Q1
OPPVAL = 0

Q2N4141
M1 M2
OFFTIME = 200nS DSTM2
ONTIME = 200nS CLK
VB
DELAY = 0
STARTVAL = 1 V
OPPVAL = 0 IRFP462 IRFP462

0 0

V
M3 M4

VB VA

IRFP462 IRFP462
Q2
VCC

M5 Q2N4141
V1

5Vdc
IRFP462

0 0

BiCMOS implementation of the NOR function


6.0V

(40.000n,4.4887)

4.0V

2.0V

(320.000n,-257.165m)
0V

-2.0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(DSTM1:1) V(DSTM2:1) V(Q1:e)
Time

Waveforms for the NOR function

The transistors are modeled with the following parameters:

Wp=1µ, Lp=45n, Vtpo=-0.5V, Cbdp=2.293fF, Cgspo=1.038pF, Cgdpo=291.9fF


Wn=1µ, Ln=45n, Vtno=+0.5V, Cbdn=5.156fF, Cgsno=1.947pF, Cgdno=135.8fF

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VCC VCC VCC

M7 M6

VA VB

IRFP9140 IRFP9140

M1

OFFTIME = 100nS DSTM1


VA
ONTIME = 100nS CLK
VA
DELAY = 0
STARTVAL = 1 V
IRFP462
Q1
OPPVAL = 0

M2 Q2N4141

OFFTIME = 200nS DSTM2


VB
ONTIME = 200nS CLK
VB
DELAY = 0
STARTVAL = 1 V
IRFP462
OPPVAL = 0

V
M3

VB

IRFP462
VCC

M4

V1
VA

5Vdc IRFP462
Q2

0 M5 Q2N4141

IRFP462

0 0

BiCMOS implementation of the NAND function


6.0V

(40.000n,4.5323)

4.0V

2.0V

(340.000n,-258.443m)
0V

-2.0V
0s 50ns 100ns 150ns 200ns 250ns 300ns 350ns 400ns
V(DSTM1:1) V(DSTM2:1) V(Q1:e)
Time

Waveforms for the NAND function

The transistors are modeled with the following parameters:

Wp=1µ, Lp=45n, Vtpo=-0.5V, Cbdp=2.293fF, Cgspo=1.038pF, Cgdpo=291.9fF


Wn=1µ, Ln=45n, Vtno=+0.5V, Cbdn=5.156fF, Cgsno=1.947pF, Cgdno=135.8fF

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