FGPF4536 — 360 V PDP Trench IGBT

November 2013

FGPF4536
360 V PDP Trench IGBT
Features General Description
• High Current Capability Using novel trench IGBT technology, Fairchild’s new series of
• Low Saturation Voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low con-
• High Input Impedance
duction and switching losses are essential.
• Fast Switching
• RoHS Compliant

Applications
• PDP TV, Consumer appliances, Lighting

TO-220F
GC E (Retractable)

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 360 V
VGES Gate to Emitter Voltage  30 V
IC pulse(1)* Pulsed Collector Current @ TC = 25oC 220 A

Maximum Power Dissipation @ TC = 25oC 28.4 W

PD
Maximum Power Dissipation @ TC = 100oC 11.4 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case - 4.4 C/W
o
RJA Thermal Resistance, Junction to Ambient - 62.5 C/W

Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1 sec
* Ic_pluse limited by max Tj

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGPF4536 Rev. C1
 FGPF4536 — 360 V PDP Trench IGBT
Package Marking and Ordering Information
Packing
Part Number Top Mark Package Reel Size Tape Width Quantity
Method
FGPF4536 FGPF4536 TO-220F Tube N/A N/A 50

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 A 360 - - V
BVCES / Temperature Coefficient of Breakdown
VGE = 0V, IC = 250 A - 0.4 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 100 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 2.4 3.3 4.0 V
IC = 20 A, VGE = 15 V - 1.19 - V
IC = 30 A, VGE = 15 V - 1.33 - V
VCE(sat) Collector to Emitter
Saturation Voltage IC = 50 A, VGE = 15 V,
TC = 25oC - 1.59 1.8 V

IC = 50 A, VGE = 15 V,
TC = 125oC - 1.66 - V

Dynamic Characteristics
Cies Input Capacitance - 1295 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 56 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 43 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 5 - ns
VCC = 200 V, IC = 20 A,
tr Rise Time - 20 - ns
RG = 5 , VGE = 15 V,
td(off) Turn-Off Delay Time Resistive Load, TC = 25oC - 41 - ns
tf Fall Time - 182 - ns
td(on) Turn-On Delay Time - 4.6 - ns
tr Rise Time VCC = 200 V, IC = 20 A, - 21 - ns
RG = 5 , VGE = 15 V,
td(off) Turn-Off Delay Time Resistive Load, TC = 125oC - 43 - ns
tf Fall Time - 249 - ns
Qg Total Gate Charge - 47 - nC
VCE = 200 V, IC = 20 A,
Qge Gate to Emitter Charge VGE = 15 V - 5.4 - nC
Qgc Gate to Collector Charge - 15 - nC

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGPF4536 Rev. C1
 FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

o 20V 12V
TC = 25 C o 20V 15V
200 TC = 125 C 12V
15V 200
10V
Collector Current, IC [A]

Collector Current, IC [A]

150 150
10V

VGE = 8V
100 VGE = 8V
100

50
50

0
0 1 2 3 4 5 6 0
0 1 2 3 4 5 6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Common Emitter 200 Common Emitter

200
VGE = 15V VCE = 10V
o o
Collector Current, IC [A]

TC = 25 C TC = 25 C
Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
150 150

100 100

50 50

0 0
0 1 2 3 4 5 6 0 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]

o o
TC = 25 C
Collector-Emitter Voltage, VCE [V]

TC = 125 C
16 16
50A 50A

12 12
30A 30A

8 8
IC = 20A
IC = 20A
4 4

0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGPF4536 Rev. C1
 FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. Case Figure 8. Capacitance Characteristics

Temperature at Variant Current Level
2400
1.7
Common Emitter
VGE = 0V, f = 1MHz
Collector-Emitter Voltage, VCE [V]

50A
1.6 2000 o
TC = 25 C

Capacitance [pF]
1.5 1600
Cies
1.4
30A 1200
1.3
800
1.2 Coes
IC = 20A 400
1.1 Cres
Common Emitter
VGE = 15V 0
1.0 0.1 1 10 30
20 40 60 80 100 120 140
o Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [ C]

Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics

15 500

100 10s
Gate-Emitter Voltage, VGE [V]

12
Collector Current, Ic [A]

100s
200V 1ms
10
9 10 ms
VCC = 100V DC

1
6
Single Nonrepetitive
Pulse TC = 25oC
3 0.1
Curves must be derated
Common Emitter linearly with increase
o in temperature
TC = 25 C
0 0.01
0 10 20 30 40 50 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
100 1000

tf
tr
Switching Time [ns]

Switching Time [ns]

10 100
td(off)
td(on) Common Emitter
VCC = 200V, VGE = 15V Common Emitter
IC = 20A VCC = 200V, VGE = 15V
o IC = 20A
TC = 25 C o
o TC = 25 C
TC = 125 C o
TC = 125 C
1 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [ ] Gate Resistance, RG [ ]

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGPF4536 Rev. C1
 FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
100 400

tr
tf
Switching Time [ns]

Switching Time [ns]

100

10
td(on)

Common Emitter td(off)

Common Emitter
VGE = 15V, RG = 5 VGE = 15V, RG = 5
o o
TC = 25 C TC = 25 C
o o
TC = 125 C TC = 125 C
1 10
10 20 30 40 50 10 20 30 40 50
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current
5000 1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
1000 o
TC = 25 C Eoff
Switching Loss [uJ]
Switching Loss [uJ]

o 100
TC = 125 C
Eoff

Eon
100
10 Common Emitter
Eon VGE = 15V, RG = 5
o
TC = 25 C
o
TC = 125 C

10 1
0 10 20 30 40 50 10 20 30 40 50
Gate Resistance, RG [ ] Collector Current, IC [A]

Figure 17. Turn off Switching SOA Characteristics

500

100
Collector Current, IC [A]

10

Safe Operating Area

o
VGE = 15V, TC = 125 C

0.1
1 10 100 500
Collector-Emitter Voltage, VCE [V]

©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGPF4536 Rev. C1
 FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics

Figure 18.Transient Thermal Impedance of IGBT

8
Thermal Response [Zthjc]

0.5

1 0.2
0.1
0.05
PDM
0.1 0.02
t1
0.01 t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC

0.01 -5 -4 -3 -2 -1 2
10 10 10 10 10 1 10 10
Rectangular Pulse Duration [sec]

©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGPF4536 Rev. C1
 FGPF4536 — 360 V PDP Trench IGBT
Package Dimensions

Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD

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Dimensions in Millimeters

©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGPF4536 Rev. C1
 FGPF4536 — 360 V PDP Trench IGBT
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Rev. I66

©2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGPF4536 Rev. C1
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