SUP/SUB75N08-10

Vishay Siliconix

N-Channel 75-V (D-S), 175C MOSFET


  
V(BR)DSS (V) rDS(on) (
) ID (A)
75 0.010 75a

D
TO-220AB

TO-263

DRAIN connected to TAB

G D S
Top View
G D S S
SUB75N08-10
Top View
N-Channel MOSFET
SUP75N08-10

         


Parameter Symbol Limit Unit
Gate-Source Voltage VGS
20 V

Continuous Drain Current TC = 25C 75a

ID
(TJ = 175C) TC = 125C 55
A
Pulsed Drain Current IDM 240

Avalanche Current IAR 60

Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ

TC = 25C (TO-220AB and TO-263) 187c

Power Dissipation PD W
TA = 25C (TO-263)d 3.7

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C

    

Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction to Ambient
Junction-to-Ambient RthJA
hJA
Free Air (TO-220AB) 62.5 C/W

Junction-to-Case RthJC 0.8

Notes
a. Package limited.
b. Duty cycle  1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).

Document Number: 70263 www.vishay.com
FaxBack 408-970-5600

S-57253—Rev. B, 24-Feb-98 2-1
SUP/SUB75N08-10
Vishay Siliconix

Specifications (TJ = 25C Unless Otherwise Noted)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 75

V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 3.5 4.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 75 V, VGS = 0 V 1
Z
Zero Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 75 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 75 V, VGS = 0 V, TJ = 175C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 120 A

VGS = 10 V, ID = 30 A 0.0087 0.010

D i S
Drain-Source O S
On-State R i
Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125C 0.017 W

VGS = 10 V, ID = 30 A, TJ = 175C 0.021

Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S

Dynamicb
Input Capacitance Ciss 4800
Output Capacitance Coss VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz 910 pF
F
Reverse Transfer Capacitance Crss 270
Total Gate Chargec Qg 85 120
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V,
V ID = 75 A 31 nC
C
Gate-Drain Chargec Qgd 24
Turn-On Delay Timec td(on) 20 40
Rise Timec tr VDD = 30 V
V,, RL = 0 47 W
0.47 95 200
ns
Turn-Off Delay Timec td(off) ID ^ 75 A,
A VGEN = 10 V V, RG = 2 5W
2.5 65 120
Fall Timec tf 20 60

Source-Drain Diode Ratings and Characteristics (TC = 25C)b

Continuous Current IS 75
A
Pulsed Current ISM 240
Forward Voltagea VSD IF = 75 A , VGS = 0 V 1.0 1.3 V
Reverse Recovery Time trr 80 120 ns
Peak Reverse Recovery Current IRM(REC) IF = 75 A,
A di/dt
di/d = 100 A/ms
A/ 7 9 A
Reverse Recovery Charge Qrr 0.28 0.54 mC

Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

www.vishay.com
FaxBack 408-970-5600 Document Number: 70263

2-2 S-57253—Rev. B, 24-Feb-98
 SUP/SUB75N08-10
Vishay Siliconix

 
       

Output Characteristics Transfer Characteristics

250 200
VGS = 10 V
9V
8V
200 7V
150
I D – Drain Current (A)

I D – Drain Current (A)

150

100

100
6V

50
50 TC = 125C
4V 25C
5V
–55C
0 0
0 2 4 6 8 10 0 2 4 6 8

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

120 0.012

TC = –55C
100 0.010
25C VGS = 10 V
r DS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)

80 0.008
125C
VGS = 20 V
60 0.006

40 0.004

20 0.002

0 0
0 20 40 60 80 100 0 20 40 60 80 100

VGS – Gate-to-Source Voltage (V)

ID – Drain Current (A)

Capacitance Gate Charge

7000 20

6000 VDS = 30 V
V GS – Gate-to-Source Voltage (V)

16 ID = 75 A
Ciss
5000
C – Capacitance (pF)

12
4000

3000
8

2000

Coss 4
1000 Crss

0 0
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 70263 www.vishay.com
FaxBack 408-970-5600

S-57253—Rev. B, 24-Feb-98 2-3
SUP/SUB75N08-10
Vishay Siliconix

       

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
2.0
r DS(on) – On-Resistance ( Ω )

TJ = 150C

I S – Source Current (A)

(Normalized)

1.5 TJ = 25C
10
1.0

0.5

0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)

  


Maximum Avalanche and Drain Current

vs. Case Temperature Safe Operating Area
100 500

Limited
by rDS(on) 10 ms
80 100

100 ms
I D – Drain Current (A)

I D – Drain Current (A)

60
10
1 ms

40
10 ms
1 100 ms
20 TC = 25C dc
Single Pulse

0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1
0.1 0.05

0.02

Single Pulse

0.01
10–5 10–4 10–3 10–2 10–1 1 3
Square Wave Pulse Duration (sec)

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FaxBack 408-970-5600 Document Number: 70263

2-4 S-57253—Rev. B, 24-Feb-98