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¾ Electrical conduction
• How many moveable electrons are there in a
material (carrier density)?
• How easily do they move (mobility) ?
¾ Semiconductivity
• Electrons and holes
• Intrinsic and extrinsic carriers
• Semiconductor devices: p-n junctions and
transistors
¾ Conduction in polymers and ionic materials
¾ Dielectric behavior
σ (Ω.cm)-1
unfilled bands
conduction band
Energy
band gap
valence band
filled bands
band
filled states
band
filled filled
band band
Cu 1s22s22p63s23p63d104s1 Mg 1s22s22p63s2
MSE 2090: Introduction to Materials Science Chapter 18, Electrical Conductivity 7
Energy Band Structures and Conductivity
(semiconductors and insulators)
In semiconductors and insulators, the valence band is
filled, no more electrons can be added (Pauli's principle).
Electrical conduction requires that electrons be able to gain
energy in an electric field. To become free, electrons must
be promoted (excited) across the band gap. The excitation
energy can be provided by heat or light.
Insulators: Semiconductors:
wide band gap (> 2 eV) narrow band gap (< 2 eV)
filled states
valence valence
band band
filled filled
band band
|vd| = μeE
E
where μe – electron Scattering
events
mobility [m2/V-s]. The
“friction” transfers part of
the energy supplied by the
electric field into the
lattice as heat. That is how
electric heaters work.
Net electron motion
Influence of impurities:
• Impurities that form solid solution
ρi = Aci(1-ci)
where ci is impurity concentration, A – composition
independent constant
50
(10 -8 Ohm-m)
Resistivity, ρ
40
30
20 Cu-Ni alloy
10
0
0 10 20 30 40 50
Composition, wt% Ni
MSE 2090: Introduction to Materials Science Chapter 18, Electrical Conductivity 15
Conductivity / Resistivity of Metals
Influence of plastic deformation:
4 ×10 −4 Ω −1m −1 −3
n= = 1 .3 × 1016
m
1.6 ×10 −19 C × (0.14 + 0.05)m 2 V −1s −1
V C
molar volume of Si ≈12 cm3/mol Ω= A=
23
A s
NA ≈ 6×10 atoms/mol
6×1023 / 12×10-6 = 5×1028 atoms/m3
fraction of excited electrons per atom ~10-13
MSE 2090: Introduction to Materials Science Chapter 18, Electrical Conductivity 22
Extrinsic semiconductors
The hole created in donor state is far from the valence band
and is immobile. Conduction occurs mainly by the donated
electrons (thus n-type).
σ ~ n|e|μe ~ ND |e|μe
Eg = 0.57 eV for Ge
Eg = 1.11 eV for Si
n-type Si doped
with 1021 m-3 P
Ionic Materials
¾ In ionic materials, the band gap is large and only very
few electrons can be promoted to the valence band by
thermal fluctuations.
¾ Cation and anion diffusion can be directed by the
electric field and can contribute to the total
conductivity: σtotal = σelectronic + σionic
¾ High temperatures produce more Frenkel and Schottky
defects which result in higher ionic conductivity.
Polymers
¾ Polymers are typically good insulators but can be made
to conduct by doping.
¾ A few polymers have very high electrical conductivity -
about one quarter that of copper, or about twice that of
copper per unit weight.
d
+ _ _ _
+ +
_ +
electronic polarization
ionic polarization
Piezoelectricity
In some ceramic materials, application of external forces
produces an electric (polarization) field and vice-versa
Applications of piezoelectric materials is based on
conversion of mechanical strain into electricity
(microphones, strain gauges, sonar detectors)
Examples:
barium titanate BaTiO3
lead zirconate PbZrO3
quartz.