HF TRANSCEIVER

Prof. Yosef PINHASI

The transceiver presented in this article is designed to operate in the radio amateur
bands of the HF frequencies (3-30MHz). It was constructed on four printed circuit
boards:

• Receiver and audio amplifier

• Intermediate frequency (IF) modulator and product detector
• Up-converter mixer and radio frequency (RF) power amplifier
• Transmit / Receive (T-R) relay and RF low pass filter.

A block diagram of the transceiver is illustrated in Figure 1. In order to avoid mutual

electromagnetic interferences, the receiver and IF sections are separated from the RF
power stage. This requires transferring three signals between the two units; IF
double-side band (DSB) modulated signal, local oscillator and the RF antenna signal.

Much effort has been directed to keep the design simple and compact by utilizing
integrated circuits and direct couplings. Each of the four single-sided PCBs has its
own power supply, including a voltage regulation circuitry. In its present version, the
transceiver is operating in the 20m amateur band, covering 14.000-14.350MHz. The
receiver can detect AM, FM and SSB signals, while the transmitter operates in a DSB
mode.
 RECEIVER

SA605

MPSH10
9 FM
1 Quadrature
LNA RF
455KHz detector
7 AM
AUDIO OUT
LM380

VFO AF

3 14

Buffer
2N918

VFO 455KHz IF CW/SSB

7404
Product detector

FREQUENCY
COUNTER

BFO BFXO
2N4416
455KHz

Buffer Buffer 2N 918

2N2222 2N2222 BC149 MICROPHONE

BFXO LM741
MIC.
IF DSB
PA Driver AF
455KHz AUXILARY
Balanced mixer Balanced modulator
TONE
MRF150
MRF150 2N3866
SA602 MC1496 TONE
2N3553
1KHz

2N3904

TRANSMITTER RF 455KHz IF
BALANCED MODULATOR & PRODUCT DETECTOR

Figure 1: Block diagram of the HF transceiver.

I. THE RECEIVER

Figure 2 is the electronic scheme of the receiving module. The front-end of the
receiver consisted of a 4.7µH inductor in series with a 27pF capacitor, constituting a
resonant circuit at 14.128MHz. The two diodes at the input protect from excessive
signals by clipping spikes and large amplitudes that may damage the receiver front-
end. The series resonant filter it is followed by an impedance matching network
transferring the aerial 50Ω impedance into 4.5KΩ input impedance of the SA605 RF
stage. The matching network is shown in Figure 3.a and its transmission
characteristics of the matching network are shown in Figure 3.b.

+12V 5.1K

BFXO (from modulator)

1N4148

2
0.1u 0.1u 455KHz black IF
455KHz 455KHz 3 4 270 470p
S 1K
1 3 1 3 CW / SSB
47K 2

0.1u 1 6 270 470p

0.1u S

20
19
18
17
16
15
14
13
12
11
2N2222 1N4148 5.1K
10n

SA605 10p
10n 10n
4.7K 1K 40n
1
2
3
4
5
6
7
8
9
10

Audio (to audio amplifier)

FM
AM AM / FM

AM +12V
680
RF in (from T/R relay)

56pF
24 turns T-50-6

4.7u
BNC 27p 1n 1n
2.3uH

1
2

455KHz black IF
470pF 50p
1N4148 1N4148
12 turns T-50-6

1N4148 1N4148 100K 100K 100K

0.577uH

RFC
BB109 1mH +
0.1u 6.2V
22K 50p 120pF 50pF 1n 15n 150p 0.1u 0.1u 100u 0.1u

10n 510 20K 2K 100K

+ 10V
0.47u 0.1u 0.1u
47u
2N2222A
10n 2.7K 220K 1K 100K 470
2

10n
VFO (to mixer and power amplif ier) 1
10n
BNC 2N918

5.1K 100K 680K

Figure 2: The receiver and product detector.

56pF
24 turns T-50-6
2.3uH

Input 4.5K

50 Ohm 470pF

(a) (b)
Figure 3: Front-end impedance matching network: a) scheme, b) power transmission.
The main receiving chain is based on the Philips SA605 mixer and IF system [1].
This integrated circuit (previously manufactured by Signetics with the number
NE605) is a super-heterodyne receiver composing of an internal balanced mixer,
local oscillator and intermediate frequency amplifiers. The 6.2V regulated supply
voltage required at leg 7 is achieved by employing a zener diode.

The local oscillator (L.O.) of the SA605 is based on a varactor-tuned variable

frequency oscillator (VFO). The L.O. frequency should be 455KHz below the
receiving frequency, i.e. 13.545-13.895MHz. In this Colpitts configuration, the
frequency is determined by the coil L3, the varactor CV and the two parallel capacitors
C3a and C3b, as shown in Figure 4.a. The oscillation frequency of the L.O. is
following the expression:

1
f LO (V ) =
 C ⋅C 
2π L3 CV (V ) + C3 + 1 2 
 C1 + C2 

While using the BB109, I found out that the coil inductance should be L3=0.577µ H
(12 turns on a T-50-6 iron powder toroid yellow core). The capacitor is
approximately C3=150pF made of a C3a=120pF capacitor in parallel with a C3b=50pF
trimmer (see Figure 4.a). In that case, the receiving frequency as a function of the
voltage introduced to the varactor is shown in Figure 4.b. Note that besides the main
14.000-14.350MHz band (455KHz above the L.O. frequency), also image
frequencies of 13.09-13.440MHz (455KHz below the L.O.) are expected to be
detected as a result of a super-heterodyne configuration.

1n 1n
4 +
Vtune
12 turns T-50-6

C1=50p
L3=0.577uH

3 Cv
C3a C3b
BB109
C2=50p
-

(a) (b)
`Figure 4: The VFO: a) Resonant circuit, b) Receiving frequency as a function of the
voltage in the 20m bands. The image frequencies are also shown.
The continuous local oscillator sine wave appearing in leg 3 is also transferred to the
up-conversion mixer in the transmitting unit of the transceiver, via a buffering 2N918
transistor in the receiver module followed by 2N2222A transistor (located in the
transmitting module).

Two standard 455KHz ceramic filters are used in the IF stage. The SA605 is
originally designed as an FM receiver; it includes a limiter and an FM quadrature
detector, as well as an RSSI (received signal strength indicator). When an FM signal
is received, the demodulated information is obtained at the unmuted audio output (leg
9). A black 455KHz standard IF transformer is used in the quadrature detection
system. Appropriate design of the RSSI filter, enables also detection of AM signals.
In that case the demodulated audio is obtained at the RSSI output (leg 7).

In order to detect CW or SSB transmissions, an external product detector is added.

Here, a switching two-diode detector was chosen, driven by a 2N2222 bipolar
transistor and an additional 455KHz black IF transformer. The detector, which in this
construction is part of the IF PCB, is connected to leg 14 (the input of the SA505
limiter), where the IF signal is obtained. The 455KHz beat frequency is generated by
a crystal oscillator (BFXO) in the IF board.

The audio amplifier is shown in Figure 5, including the 12V regulated power supply
of the whole receiver unit. The audio amplifier is composed of the LM380 producing
about 2W of RMS power over a 8Ω loudspeaker.

+12V
7812
1 3
OUT IN

0.1u 4.7K

4.7K
1 2N3906
MU TE 2 Q1
3

10K
Audio (f rom receiver)
7
8

100K 1u
+

100K 2 470u
+ 6 1
+

3 2
+

- LM380 3
4 PH ONES SPEAKER
4
5

5
~

+ + +
100K 47u 0.1u 10u 0.1u 1000u
-

1n

Figure 5: Audio amplifier and receiver 12V power supply.

 II. THE IF BALANCED MODULATOR

The modulator section is based on the Motorola MC1496 balanced modulator

integrated circuit [2]. Audio signals from microphone, external auxiliary line or
internal tone generator are combined together by an operational amplifier TL071
(Equivalent to the 741). The microphone signal is fed to a single transistor pre-
amplifier, enabling utilization of a standard 600Ω dynamic microphone or an
electrostatic. The transistor BC149 was chosen due to its low noise performance but
any other small-signal transistor will do well. The level of the microphone can be
adjusted by an external potentiometer, changing the modulation level. A tone of
1,000Hz is generated by a single 2N3904 (or equivalent) transistor phase-shift
oscillator, which can be switched on for transmitter testings. An internal on-board
trimmer is used for setting tone modulation level. The auxiliary input impedance is
47KΩ, similar to that of standard audio inputs. The voltage gain of the TL071 audio
amplifier is 20, producing 300-500mVpeak to the signal input of the balanced
modulator.

The modulator generates a double-side band suppressed-carrier signal centered at an

intermediate, sub-carrier frequency of 455KHz. The sub-carrier is produced by the
beat frequency crystal oscillator (BFXO) based on the JFET 2N4416. The same
signal is used also for the product detection in the receiver. The oscillator, is buffered
by a two stage amplifier, consisting of the common emitter 2N918 followed by a
common collector 2N2222. This is required in order to feed the low impedance
carrier input of the balanced modulator with 60-100mVpeak of 455KHz continuous
wave. A trimmer is adjusted for best carrier null the output. In order to enable CW or
amplitude modulation transmission, violation of the carrier balance is created, by
connecting a 1KΩ resistor from leg 4 to the ground.

The balanced modulator, 455KHz oscillator, audio preamplifier and tone generator
are all constructed on the same PCB including their 12V regulated power supply.
 7812
180
1 3
OUT IN

2N 4416 820 2. 7K 1.2K +

2N 2222A 0. 1u 10u

1n 3.6K 15n

2N 918
455KHz
0.1u 47

RFC
47K

100K +
1n 1N4148 6.8V 100u 12K 240

455KHz DSB (t o t rans mit ter)

1mH 1n

RCA JACK
0. 1u
1

2
10K 10K 5. 1K

1u

14
13
12
11
10
9
8
+
MICR OPH ONE

MC1496
1 150p 1. 5M

2 100K

1
2
3
4
5
6
7
3 BC149 47K
56n

50n 10K 180

1M 2.7K

7
1
1K 10K
3 + TL071 1u

+
1u 6
AUXILI AR Y

1 47K 2 -
2 +
3

4
5
Tone 10K 10K

50K
100K 10K 100 100 1K 820

1u
+

10n 10n 10n 10n

+
2N 3904

47K
50K

~
+
0.1u 10m
CW / AM
10K 10K 10K 10K 1K 10u + 5. 1K + + 1K +
10u 10u 0. 1u 10u

-
1n

Figure 6: Intermediate frequency balanced modulator.

 III. THE UP-CONVERSION MIXER AND POWER AMPLIFIER

The unique structure of the transmitter unit shown in Figure 7, is aimed at

simplification of the coupling between the mixer, driver and final amplifier. These
three stages are constructed on a single PCB, installed in a separated enclosure, to
minimize RF interferences to the sensitive receiver.

The up-conversion mixer is the well known SA602 double-balanced mixer and
oscillator [3]. A 6.2V zener diode is employed to regulate the voltage supplied to the
mixer. The double-side band, suppressed-carrier signal from the MC1496 balanced
modulator (in Figure 6), is fed to the oscillator input (leg 6) of the SA602 mixer. A
455KHz ceramic band pass filter is used to reduce inter-modulation products of the
sub-carrier before the up-conversion process. As mentioned before, the internal VFO
of the SA605 receiver (shown in Figure 2) serves also as the local oscillator of the
transmitter. The continuous sinusoidal wave of the VFO, shifted 455KHz from the
transmission carrier frequency is fed to the input of the mixer (leg 1). Two RF
suppressed carrier modulated signals are generated at the output ports of the balanced
mixer, legs 4 and 5, with a 180˚ phase difference between each other. This enables a
direct coupling to the subsequent push-pull driver.

The driver is based on high frequency bipolar junction transistors, the 2N3866
followed by the 2N3553. This stage is biased to operate in a class A mode, drawing a
quiescent current of 80-100mA from a 12V regulated power supply. The total power
dissipation at this stage is approximately 1W, requiring installation of heat sinks on
the 2N3553 transistors. The switch, operating the mixer and driver, also serves as the
PTT of the transmitter. The driver is coupled to the power amplifier section via a 3:1
transformer, reducing the impedance by a factor of 9 as explain in [4]. The primary
supplies the voltage to the collectors of the 2N3553, while the secondary applies the
bias to the gates of the MRF150 field effects transistors of the final amplifier. The
transformer is made of a 22AWG enameled wires wound through a BN-43-202
ferrite core, 3 bifilar windings for the primary and a single winding for the secondary.

Two MRF150 field effects transistors (FETs) serve in the final push-pull power stage.
The MRF150 transistor is an N-channel, enhancement-mode FET, designed primarily
for delivering 150W, with 45% efficiency at 50V. It is often used in broad-band
linear amplifiers operating in the HF band [5-8]. In the present design both gates are
biased from the same regulated 5V source. The positive bias is adjusted by a 10KΩ
trimmer for a quiescent current draw of 200mA from the 50V power supply. In order
to avoid oscillations, two 1Ω are used, isolating the paralleling inductance, from the
gates as noted in [6-7]. The power transistors should be mounted on a proper heat
sink for efficient removal of the dissipated heat.
 T / R Control (to T/R relay)

470 7812 220, 10W 500mA Driv er

1 3
OUT IN

0.1u 100u + RFC + 5A Power Amplif ier

6.2V 6.8K 390u 470 0.1u 10u 0.1u 22V , 5W

1.2K

Yellow

R ed
455KH z D SB (from modulator

RCA J ACK 455KHz 1.8K 10n

1 1 3 2N 3866
2

1
2

8
7
6
5

2N 3553

RF out (to T/R relay)

MRF150
SA602 100 10K

10 bifilar turns FT-50-43A

3:1
1: 3
1
2
3
4

3
1.2K 220 10 1 4 1 3
0.1u 15n
2 5 100p 100

3 6 15n 2 4
1.2K 220 10

4
BN-43-202 BN-43-7051

100 10K
1 MRF150
2N 3553
VFO (from receiver)

BN C 10n 1.8K
1
2N 3866
10n 10K
2

1M 5A

A
1N4005
6.8K

+
7805 82
3 1
IN OUT
Bias +

~
0.1u
Green 10m , 63V
+
10n 0.1u 0.1u 10u 0.1u 0.1u

-
1n

(a)
 (b)
Figure 7: The up-converter and power amplifier stage a) schematics, b) photo.
 IV. T/R relay and Filter

RF out (f rom transmitter)

BNC
RF in (to receiv er) 1

T/ R RELAY DPDT

2
4
3 320n 668n 320n
5 SO239
8 1
6 ANTENNA
22V , 5W 7812 7 8t urns T-50-2 12turns T-68-6 8t urns T-50-2

2
3 1 1
IN OUT 2

T / R indicator
PHONEJ ACK
T/ R control (from transmitter)

5. 1K 1 470
2
3

1
1N914
1K 220p 220p
4N26

2
1

4N26
2N3019
2

2N3019
+
~

+ + 10
0.1u 0.1u 10u 0.1u
1000u, 63V
-

1n

Filter calculation from

http://www.wa4dsy.net/filter/hp_lp_filter.html
V. References

1. A. K. Wong: "Reviewing key areas when designing with the SA605", Philips
Semiconductors application note AN1994 (November 2007)
2. R. Hejhall: "MC1496 Balanced Modulator", Motorola Semiconductors
application note AN531/D (January 2002)
3. "High sensitivity applications of low-power RF/IF integrated circuits", Philips
Semiconductors application note AN1993 (August 2007)
4. H. Granberg: "Broadband transformers and power combining techniques for
RF", Motorola Semiconductors application note AN749/D (January 2002)
5. H. Granberg: "MOSFET RF power in the kW level: An update", QST Part 1
(December 1982) and Part 2 (January 1983)
6. H. Granberg: "Get 600 Watts RF from four power FETs", Motorola
Semiconductors application note EB104 (1983)
7. H. Granberg: "Get 600 Watts RF from four power FETs", Motorola
Semiconductors application note EB104/D (1993)
8. T. Sowden: "Hombrew solid-state 600WHF amplifier", QST (June 2006)